N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662D18BGD

SigmaQuad-II

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

2

695 mA

Pipelined

4 M x 18

20 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

10 Weeks

BGA-165

YES

165

165

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Compliant

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8342T10BD-400I

400 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.23

BGA

Industrial grade

400 MHz

-40 to 100 °C

Tray

GS8342T10BD

e0

3A991.B.2.B

SigmaDDR-II+ B2

Tin/Lead (Sn/Pb)

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

1

SYNCHRONOUS

610 mA

Pipelined

4 M x 9

3-STATE

1.4 mm

9

21 Bit

SRAM

36 Mbit

0.225 A

37748736 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

-40 to 85 °C

Tray

GS881Z36CGT

NBT

85 °C

-40 °C

Memory & Data Storage

9 Mbit

1

145 mA, 170 mA

6.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Compliant

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

32 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

-40 to 85 °C

Tray

GS88132CD

同步突发

85 °C

-40 °C

Memory & Data Storage

9 Mbit

1

130 mA, 145 mA

7.5 ns

Flow-Through/Pipelined

256 k x 32

18 Bit

SRAM

9 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Commercial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

Compliant

有

333 MHz

+ 70 C

1.9 V

0 C

15

0 to 85 °C

Tray

GS8662T10BGD

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

72 Mbit

1

535 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Industrial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662T10BGD

SigmaDDR-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

545 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

500 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

500 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342D20BD

SigmaQuad-II+

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

2

855 mA

Pipelined

2 M x 18

19 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

8 Weeks

BGA-165

YES

165

165

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

512000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS88218CGD-200I

524288 words

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

有

200 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Tray

GS88218CGD

e1

有

3A991.B.2.B

Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

-40 °C

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

9 Mbit

2

SYNCHRONOUS

150 mA, 175 mA

6.5 ns

512 k x 18

1.4 mm

18

19 b

SRAM

9 Mb

9437184 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

SigmaQuad-II

DDR

Compliant

Industrial grade

357 MHz

FBGA

QDR

1.8000 V

Synchronous

2 MWords

18 Bit

表面贴装

有

357 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

-40 to 100 °C

Tray

GS8342Q18BD

SigmaQuad-II

100 °C

-40 °C

Memory & Data Storage

1.8 V

36 Mbit

2

955 mA

Pipelined

2 M x 18

20 Bit

SRAM

36 Mbit

Industrial

SRAM

无

N/A

-

8 Weeks

BGA-119

YES

119

119

2, 2.7 V

表面贴装

Compliant

250 MHz

+ 85 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

BGA,

网格排列

512000

PLASTIC/EPOXY

-40 °C

未说明

5.5 ns

85 °C

无

GS88218CB-250IV

1.8 V

BGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.13

BGA

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

-40 to 85 °C

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

9 Mbit

2

SYNCHRONOUS

145 mA, 185 mA

5.5 ns

Flow-Through/Pipelined

512 k x 18

1.77 mm

18

18 Bit

9 Mbit

9437184 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

22 mm

14 mm

无

N/A

-

Compliant

70 °C

0 °C

1.8 V

1

20 b

18 Mb

无

N/A

-

BGA-165

165

GSI技术

SigmaDDR-II

DDR

Industrial grade

300 MHz

FBGA

DDR

1.8000 V

Synchronous

2 MWords

36 Bit

表面贴装

Compliant

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

-40 to 100 °C

Bulk

GS8662T36BD

SigmaDDR-II B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

635 mA

Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

Compliant

350 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

350 MHz

-40 to 100 °C

Bulk

GS81302D36E

100 °C

-40 °C

1.8 V

144 Mbit

2

1.065 A

Pipelined

4 M x 36

20 Bit

144 Mbit

Industrial

无

N/A

-

165

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

512 kWords

36 Bit

1.9 V

表面贴装

Compliant

Industrial grade

-40 to 85 °C

85 °C

-40 °C

1.8 V

1

Pipelined

19 Bit

18 Mbit

Industrial

无

N/A

-

165

表面贴装

1.9 V

9 Bit

8 MWords

Synchronous

1.7 V

1.8000 V

DDR

FBGA

450 MHz

Compliant

Commercial grade

0 to 85 °C

85 °C

0 °C

1.8 V

1

Pipelined

22 Bit

72 Mb

Commercial

无

N/A

-

BGA-165

165

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

表面贴装

2.7, 3.6 V

36 Bit

256 kWords

Compliant

333 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

-40 to 85 °C

85 °C

-40 °C

9 Mbit

4

200 mA, 260 mA

4.5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

9 Mbit

Industrial

无

N/A

-

8 Weeks

YES

165

165

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8662Q18BGD-300T

300 MHz

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.2

BGA

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

Compliant

LBGA, BGA165,11X15,40

0 to 85 °C

Tape & Reel

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

0 °C

流水线结构

8542.32.00.41

SRAMs

CMOS

1.8 V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

2

SYNCHRONOUS

0.85 mA

Pipelined

4MX18

3-STATE

1.4 mm

18

21 Bit

72 Mbit

75497472 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

15 mm

13 mm

无

N/A

-

BGA-165

165

181.8@Flow-Through/250@Pipelined MHz

FBGA

1.8, 2.5 V

1.7, 2.3 V

Synchronous

18 Bit

2, 2.7 V

有

250 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

0 to 70 °C

Tray

GS881Z18CGD

NBT

70 °C

0 °C

Memory & Data Storage

9 Mbit

1

125 mA, 165 mA

5.5@Flow-Through/3@P

512 k x 18

18 b

SRAM

9 Mb

9

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Industrial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662T10BGD

SigmaDDR-II+ B2

100 °C

-40 °C

Memory & Data Storage

1.8 V

72 Mbit

1

705 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Industrial

SRAM

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

Commercial grade

153.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

0 C

15

1.7 V

0 to 70 °C

Tray

GS864436E

同步突发

70 °C

0 °C

Memory & Data Storage

72 Mbit

4

270 mA, 400 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Commercial

SRAM

无

N/A

-

Compliant

70 °C

0 °C

1.8 V

1

19 b

18 Mb

无

N/A

-

Compliant

85 °C

-40 °C

1.8 V

1

20 b

18 Mb

无

N/A

-

BGA-165

165

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

333 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

-40 to 100 °C

Bulk

100 °C

-40 °C

36 Mbit

2

255 mA, 340 mA

4.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

36 Mbit

Industrial

无

N/A

-

165

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

18 Bit

1.9 V

表面贴装

Compliant

Industrial grade

-40 to 85 °C

85 °C

-40 °C

1.8 V

1

Pipelined

20 Bit

18 Mbit

Industrial

无

N/A

-

10 Weeks

BGA-165

YES

165

165

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

4.5 ns

70 °C

有

GS8161Z36DGD-333

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.26

BGA

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

0 to 70 °C

Tray

GS8161Z36DGD

3A991.B.2.B

NBT

70 °C

0 °C

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

COMMERCIAL

18 Mbit

4

SYNCHRONOUS

260 mA, 315 mA

4.5 ns

Flow-Through/Pipelined

512 k x 36

1.4 mm

36

19 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

无