N/A

-

TQFP-100

100

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 100 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

-40 to 100 °C

Tray

GS8160Z36DGT

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

300 mA, 385 mA

4 ns

Flow-Through/Pipelined

512 k x 36

SRAM

18 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

238@Flow-Through/375@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

-40 to 85 °C

Tray

GS8161E36DGD

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

290 mA, 370 mA

4.2 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

BGA-209

209

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Military grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 125 C

3.6 V

- 55 C

21

2.3 V

SMD/SMT

-55 to 125 °C

Tray

GS816272CC

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

8

6.5 ns

Flow-Through/Pipelined

256 k x 72

18 Bit

SRAM

18 Mbit

Military

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

有

500 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

无

GS8662TT06BD-500

500 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.23

BGA

Commercial grade

500 MHz

FBGA

0 to 85 °C

Tray

GS8662TT06BD

e0

无

3A991.B.2.B

SigmaQuad-II+

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

72 Mbit

1

SYNCHRONOUS

760 mA

Pipelined

8 M x 8

3-STATE

1.4 mm

8

22 Bit

SRAM

72 Mbit

0.26 A

67108864 bit

Commercial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

12 Weeks

BGA-165

YES

165

165

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

200 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

LBGA,

GRID ARRAY, LOW PROFILE

3

8000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS81302Q19GE-200I

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.33

BGA

Industrial grade

200 MHz

FBGA

-40 to 100 °C

Tray

GS81302Q19GE

e1

有

3A991.B.2.B

SigmaQuad-II+ B2

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

144 Mbit

2

SYNCHRONOUS

885 mA

Pipelined

8 M x 18

1.5 mm

18

22 Bit

SRAM

144 Mbit

150994944 bit

Industrial

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

BGA-209

209

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

72 Bit

2, 2.7 V

表面贴装

有

166 MHz

+ 70 C

2.7 V

0 C

14

1.7 V

SMD/SMT

Parallel

0 to 70 °C

Tray

GS8322Z72GC

NBT

Memory & Data Storage

36 Mbit

8

225 mA, 280 mA

8 ns

Flow-Through/Pipelined

512 k x 72

SRAM

36 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8662D18BGD-333

333 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.29

BGA

Commercial grade

333 MHz

0 to 85 °C

Tray

GS8662D18BGD

e1

有

3A991.B.2.B

SigmaQuad-II

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

630 mA

Pipelined

4 M x 18

3-STATE

1.4 mm

18

20 Bit

SRAM

72 Mbit

75497472 bit

Commercial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

142.8@Flow-Through/166@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

166 MHz

+ 85 C

3.6 V

- 40 C

15

2.3 V

-40 to 85 °C

Tray

GS8644Z36GE

NBT

Memory & Data Storage

72 Mbit

4

285 mA, 345 mA

8 ns

Flow-Through/Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

2.7, 3.6 V

表面贴装

400 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

BGA

5.3

GSI TECHNOLOGY

活跃

GSI技术

RECTANGULAR

LBGA

2.5 V

400 MHz

GS8321E36AD-400

无

85 °C

4 ns

未说明

BGA165,11X15,40

PLASTIC/EPOXY

Commercial grade

250@Flow-Through/400@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

0 to 85 °C

e0

无

3A991.B.2.B

锡铅

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

SRAMs

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

OTHER

36 Mbit

4

SYNCHRONOUS

285 mA, 395 mA

4 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

15 mm

13 mm

N/A

-

BGA-119

119

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

200 MHz

+ 125 C

3.6 V

- 55 C

2.3 V

SMD/SMT

Parallel

Military grade

153@Flow-Through/200@Pipelined MHz

FBGA

SDR

-55 to 125 °C

GS8162Z18DB

18 Mbit

2

240 mA, 245 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

18 Mbit

Military

N/A

-

BGA-119

119

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

200 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

0 to 85 °C

36 Mbit

4

215 mA, 250 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

36 Mbit

Commercial

N/A

-

TQFP-100

100

153.8@Flow-Through/250@Pipelined MHz

1.8, 2.5 V

1.7, 2.3 V

32 Bit

2, 2.7 V

有

250 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

-40 to 85 °C

Tray

GS8640E32GT

Pipeline/Flow Through

Memory & Data Storage

72 Mbit

275 mA, 380 mA

6.5@Flow-Through/3@P

2 M x 32

SRAM

64

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662D18BGD

SigmaQuad-II

Memory & Data Storage

72 Mbit

2

590 mA

Pipelined

4 M x 18

20 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

DDR-II

SigmaSIO DDR-II

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

10

- 40 C

1.9 V

+ 85 C

300 MHz

有

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS81302S18E-300I

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.06

BGA

Industrial grade

300 MHz

FBGA

DDR

-40 to 100 °C

Tray

GS81302S18E

无

3A991.B.2.B

SigmaSIO DDR-II

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

144 Mbit

2

SYNCHRONOUS

825 mA

Pipelined

8 M x 18

1.5 mm

18

22 Bit

SRAM

144 Mbit

150994944 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

119

200@Flow-Through/333@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

Commercial grade

0 to 85 °C

4

Flow-Through/Pipelined

20 Bit

36 Mbit

Commercial

N/A

-

165

357 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

Commercial grade

0 to 85 °C

2

Pipelined

21 Bit

72 Mbit

Commercial

N/A

-

BGA-165

165

1.7 V

15

- 40 C

1.9 V

+ 85 C

300 MHz

有

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

DDR

Details

SigmaQuad-II+

GSI技术

GSI技术

Parallel

SMD/SMT

-40 to 100 °C

Tray

GS8662D37BGD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

2

745 mA

Pipelined

2 M x 36

19 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

Details

SDR

有

250 MHz

+ 70 C

2.7 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

LBGA,

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

有

GS8644Z18GE-250V

4194304 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

153.8@Flow-Through/250@Pipelined MHz

FBGA

1.8, 2.5 V

1.7, 2.3 V

18 Bit

2, 2.7 V

NBT SRAM

0 to 70 °C

Tray

GS8644Z18GE

e1

有

3A991.B.2.B

NBT

Tin/Silver/Copper (Sn/Ag/Cu)

PIPELINED OR FLOW-THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

72 Mbit

SYNCHRONOUS

250 mA, 360 mA

6.5@Flow-Through/2.3

4 M x 18

1.5 mm

18

SRAM

72

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Commercial grade

550 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

550 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342T11BGD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

1

800 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

250 MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

0 to 70 °C

Tray

GS88018CGT

同步突发

Memory & Data Storage

9 Mbit

2

125 mA, 165 mA

5.5 ns

Flow-Through/Pipelined

512 k x 18

19 Bit

SRAM

9 Mbit

Commercial

SRAM

N/A

-

4 Weeks, 5 Days

BGA-165

YES

165

165

36 Bit

2, 2.7 V

表面贴装

200 MHz

+ 85 C

2.7 V

- 40 C

1.7 V

SMD/SMT

Parallel

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

6.5 ns

85 °C

有

GS8322Z36AGD-200IV

200 MHz

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.12

BGA

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

-40 to 100 °C

GS8322Z36AGD

3A991.B.2.B

ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.8/2.5 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

235 mA, 270 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

20 Bit

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

15 mm

13 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

2 MWords

18 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

- 40 C

15

SMD/SMT

Parallel

GSI技术

GSI技术

DDR

4000000

-40 °C

0.45 ns

85 °C

GS8342D20BD-450I

450 MHz

GSI TECHNOLOGY

FBGA

1.8000 V

Synchronous

1.9 V

1.7 V

SigmaQuad-II+

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

PLASTIC/EPOXY

BGA165,11X15,40

无

1.8 V

LBGA

RECTANGULAR

活跃

5.21

BGA

Industrial grade

450 MHz

QDR

1.7 V

-40 to 100 °C

Tray

GS8342D20BD

3A991.B.2.B

SigmaQuad-II+

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

795 mA

Pipelined

2 M x 18

3-STATE

1.4 mm

18

19 Bit

SRAM

36 Mbit

0.25 A

75497472 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

1.8, 2.5 V

1.7, 2.3 V

Synchronous

4 MWords

18 Bit

2, 2.7 V

表面贴装

133 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

117.6@Flow-Through/133@Pipelined MHz

FBGA

SDR

0 to 70 °C

72 Mbit

2

210 mA, 250 mA

8.5 ns

Flow-Through/Pipelined

4 M x 18

21 Bit

72 Mbit

Commercial

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

Details

DDR-II

Industrial grade

333 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302S09GE

SigmaSIO DDR-II

Memory & Data Storage

144 Mbit

2

900 mA

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Commercial grade

250@Flow-Through/400@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

0 to 70 °C

Tray

GS8161E36DD

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

4

280 mA, 365 mA

4 ns

Flow-Through/Pipelined

512 k x 36

19 Bit

SRAM

18 Mbit

Commercial

SRAM