N/A

-

12 Weeks

表面贴装

260-BGA

YES

260

260-BGA (22x14)

260

GSI Technology Inc.

Parallel

HBGA,

GRID ARRAY, HEAT SINK/SLUG

8000000

PLASTIC/EPOXY

未说明

有

GS81313LQ18GK-800I

1.25 V

HBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

2.27

BGA

1.2500 V

1.2 V

Synchronous

8 MWords

18 Bit

1.35 V

Tray

GS81313LQ18

活跃

Volatile

800 MHz

+ 100 C

1.35 V

- 40 C

1.2 V

SMD/SMT

-40 to 100 °C

-

3A991.B.2.B

8542.32.00.41

SRAM - Quad Port, Synchronous, QDR IIIe

1.2V ~ 1.35V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B260

144Mbit

SYNCHRONOUS

800 MHz

1.9 A

10

SRAM

Parallel

8 M x 18

2.3 mm

18

-

144

PARALLEL

DDR SRAM

1.35 V

1.2 V

8M x 18

22 mm

14 mm

N/A

-

8 Weeks

表面贴装

BGA-165

YES

165

165-FPBGA (13x15)

165

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

GSI Technology Inc.

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Tray

GS832118

活跃

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

4.5 ns

85 °C

有

GS832118AGD-333I

333 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.15

BGA

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

-40 to 100 °C

Tray

GS832118AGD

3A991.B.2.B

Pipeline/Flow Through

PIPELINE OR FLOW THROUGH ARCHITECTUREL; ALSO OPERATES AT 3.3 V SUPPLY

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, Standard

2.3V ~ 2.7V, 3V ~ 3.6V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

333 MHz

255 mA, 340 mA

4.5 ns

SRAM

Parallel

Flow-Through/Pipelined

2 M x 18

3-STATE

1.4 mm

18

-

21 Bit

SRAM

36 Mbit

0.04 A

18874368 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

2M x 18

15 mm

13 mm

N/A

-

8 Weeks

表面贴装

BGA-165

YES

165

165-FPBGA (13x15)

165

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

GSI Technology Inc.

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Tray

GS8322Z

活跃

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

4.5 ns

85 °C

有

GS8322Z36AGD-333I

333 MHz

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.12

BGA

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

-40 to 100 °C

Tray

GS8322Z36AGD

e1

有

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

333 MHz

280 mA, 365 mA

4.5 ns

SRAM

Parallel

Flow-Through/Pipelined

1 M x 36

3-STATE

1.4 mm

36

-

20 Bit

SRAM

36 Mbit

0.04 A

37748736 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

1M x 36

15 mm

13 mm

N/A

-

8 Weeks

表面贴装

TQFP-100

YES

100

100-TQFP (20x14)

100

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 85 C

3.6 V

- 40 C

GSI Technology Inc.

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Tray

GS8640Z

活跃

LQFP,

FLATPACK, LOW PROFILE

3

4000000

PLASTIC/EPOXY

-40 °C

未说明

5.5 ns

85 °C

有

GS8640Z18GT-300I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.33

QFP

Industrial grade

181.8@Flow-Through/300@Pipelined MHz

TQFP

SDR

-40 to 85 °C

Tray

GS8640Z18GT

e3

有

3A991.B.2.B

NBT Pipeline/Flow Through

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

300 MHz

290 mA, 390 mA

5.5 ns

SRAM

Parallel

Flow-Through/Pipelined

4 M x 18

1.6 mm

18

-

22 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

4M x 18

20 mm

14 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

Synchronous

512 kWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

200 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

无

GS8161Z36DD-200I

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

1.83

BGA

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

-40 to 85 °C

Bulk

GS8161Z36DD

3A991.B.2.B

NBT

85 °C

-40 °C

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

18 Mbit

4

SYNCHRONOUS

230 mA

6.5 ns

Flow-Through/Pipelined

512 k x 36

1.4 mm

36

19 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

无

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

Compliant

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Bulk

GS8342T37BGD

SigmaDDR-II+ B2

85 °C

0 °C

Memory & Data Storage

1.8 V

36 Mbit

1

770 mA

450 ps

Pipelined

1 M x 36

19 Bit

SRAM

36 Mbit

Commercial

SRAM

无

N/A

-

10 Weeks

BGA-165

YES

165

165

有

GS8162Z18DGD-200

1048576 words

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

6.5 ns

未说明

PLASTIC/EPOXY

1000000

GRID ARRAY, LOW PROFILE

LBGA,

5.27

BGA

有

200 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

85 °C

Tray

GS8162Z18DGD

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

OTHER

18 Mbit

SYNCHRONOUS

195 mA

6.5 ns

1 M x 18

1.4 mm

18

SRAM

18874368 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

TQFP-100

YES

100

100

256000

UNSPECIFIED

未说明

70 °C

有

GS88136CGT-200

262144 words

3.3 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

4.79

QFP

SDR

Details

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

2.3 V

72

0 C

3.6 V

+ 70 C

200 MHz

有

LQFP,

FLATPACK, LOW PROFILE

Tray

GS88136CGT

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-XQFP-G100

不合格

COMMERCIAL

9 Mbit

SYNCHRONOUS

140 mA, 170 mA

6.5 ns

256 k x 36

1.6 mm

36

SRAM

9437184 bit

SERIAL

缓存SRAM

3.6 V

3 V

SRAM

20 mm

14 mm

N/A

-

10 Weeks

TQFP-100

YES

100

100

- 40 C

1.7 V

SMD/SMT

Parallel

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

QFP

5.26

GSI TECHNOLOGY

活跃

GSI技术

RECTANGULAR

LQFP

1.8 V

GS8161Z18DGT-200IV

有

85 °C

Industrial grade

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

18 Bit

2, 2.7 V

表面贴装

200 MHz

+ 85 C

2.7 V

-40 to 100 °C

GS8161Z18DGT

3A991.B.2.B

ALSO OPERATES AT 2.5V

8542.32.00.41

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

210 mA, 215 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

1.6 mm

18

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

20 mm

14 mm

N/A

-

10 Weeks

TQFP-100

YES

100

100

Synchronous

512 kWords

32 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

有

GS816032DGT-150IV

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

4.85

QFP

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

-40 to 100 °C

Tray

GS816032DGT

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

INDUSTRIAL

18 Mbit

4

SYNCHRONOUS

200 mA, 210 mA

7.5 ns

Flow-Through/Pipelined

512 k x 32

1.6 mm

32

20 Bit

SRAM

18 Mbit

16777216 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

0 to 85 °C

Tray

GS816218DD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

2

195 mA, 195 mA

6.5 ns

Flow-Through/Pipelined

1 M x 18

20 Bit

SRAM

18 Mbit

Commercial

SRAM

N/A

-

8 Weeks

TQFP-100

YES

100

100

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 70 C

3.6 V

0.255518 oz

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

2000000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

7.5 ns

85 °C

有

GS8320Z18AGT-150

150 MHz

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

4.85

QFP

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

TQFP

SDR

0 to 85 °C

Tray

GS8320Z18AGT

3A991.B.2.B

NBT Pipeline/Flow Through

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

OTHER

36 Mbit

2

SYNCHRONOUS

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.6 mm

18

21 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

7 Weeks

BGA-165

YES

165

165

18 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 85 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

未说明

85 °C

无

GS8321Z18AD-250

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.01

BGA

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

0 to 85 °C

Tray

GS8321Z18AD

e0

无

3A991.B.2.B

NBT

Tin/Lead (Sn/Pb)

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

OTHER

36 Mbit

2

SYNCHRONOUS

215 mA, 255 mA

5.5 ns

Flow-Through/Pipelined

2 M x 18

1.4 mm

18

21 Bit

SRAM

36 Mbit

37748736 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

1000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS8182T18BD-300I

1048576 words

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.81

BGA

有

300 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR

LBGA,

GRID ARRAY, LOW PROFILE

Tray

GS8182T18BD

e0

无

3A991.B.2.B

SigmaDDR-II B2

Tin/Lead (Sn/Pb)

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

INDUSTRIAL

18 Mbit

SYNCHRONOUS

415 mA

450 ps

1 M x 18

1.4 mm

18

SRAM

18874368 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

YES

165

165

7.5 ns

85 °C

无

GS882Z18CD-150I

2.5 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

4.74

BGA

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

-40 to 85 °C

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

2

SYNCHRONOUS

Flow-Through/Pipelined

512KX18

1.4 mm

18

18 Bit

9 Mbit

9437184 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

15 mm

13 mm

N/A

-

8 Weeks

TQFP-100

YES

100

100

LQFP,

FLATPACK, LOW PROFILE

3

512000

PLASTIC/EPOXY

-40 °C

未说明

5.5 ns

85 °C

有

GS880Z18CGT-250I

524288 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

QFP

有

250 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Tray

GS880Z18CGT

e3

有

3A991.B.2.B

NBT

Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

9 Mbit

SYNCHRONOUS

165 mA, 200 mA

5.5 ns

512 k x 18

1.6 mm

18

SRAM

9437184 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

10 Weeks

TQFP-100

YES

100

100

FLATPACK, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

5.5 ns

70 °C

有

GS816032DGT-250

524288 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

4.85

QFP

有

250 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

Tray

GS816032DGT

3A991.B.2.B

Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

COMMERCIAL

18 Mbit

SYNCHRONOUS

230 mA, 250 mA

5.5 ns

512 k x 32

1.6 mm

32

SRAM

16777216 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

10 Weeks

TQFP-100

YES

100

100

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

有

GS8160Z36DGT-200V

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.49

QFP

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

0 to 85 °C

Tray

GS8160Z36DGT

3A991.B.2.B

NBT

ALSO OPERATES AT 2.5V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

COMMERCIAL

18 Mbit

4

SYNCHRONOUS

205 mA, 210 mA

6.5 ns

Flow-Through/Pipelined

512 k x 36

1.6 mm

36

19 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

SDR

Details

SyncBurst

GSI技术

GSI技术

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

5.5 ns

有

GS832136AGD-250IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.6

BGA

Industrial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

-40 to 100 °C

Tray

GS832136AGD

3A991.B.2.B

同步突发

PIPELINE OR FLOW THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5 SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

36 Mbit

4

SYNCHRONOUS

260 mA, 315 mA

5.5 ns

Flow-Through/Pipelined

1 M x 36

1.4 mm

36

20 Bit

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

TQFP-100

YES

100

100

250 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

5.5 ns

85 °C

有

GS8320Z36AGT-250V

250 MHz

1.8 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

4.85

QFP

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

0 to 85 °C

GS8320Z36AGT

3A991.B.2.B

ALSO OPERATES AT 2.5

SRAMs

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

1.8/2.5 V

OTHER

36 Mbit

4

SYNCHRONOUS

240 mA, 295 mA

5.5 ns

Flow-Through/Pipelined

1 M x 36

3-STATE

1.6 mm

36

20 Bit

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

20 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

BGA

4.58

GSI TECHNOLOGY

活跃

RECTANGULAR

LBGA

3.3 V

262144 words

GS88136CGD-150

有

70 °C

未说明

PLASTIC/EPOXY

256000

有

150 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

Tray

GS88136CGD

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES WITH 2.3V TO 2.7V SUPPLY, FLOW THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

9 Mbit

SYNCHRONOUS

130 mA, 140 mA

7.5 ns

256 k x 36

1.4 mm

36

SRAM

9437184 bit

SERIAL

缓存SRAM

3.6 V

3 V

SRAM

15 mm

13 mm

N/A

-

BGA-119

119

- 40 C

2.3 V

SMD/SMT

Parallel

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

36 Bit

2.7, 3.6 V

Compliant

200 MHz

+ 85 C

3.6 V

-40 to 100 °C

Bulk

GS816236DB

100 °C

-40 °C

18 Mbit

4

230 mA

6.5@Flow-Through/3@P

512 k x 36

19 b

18 Mb

18

无

N/A

-

100

153.8@Flow-Through/200@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

Compliant

Industrial grade

-40 to 100 °C

Bulk

100 °C

-40 °C

2

Flow-Through/Pipelined

21 Bit

36 Mbit

Industrial

无

N/A

-

TQFP-100

100

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

0 to 85 °C

Tray

GS8320Z18AGT

NBT Pipeline/Flow Through

Memory & Data Storage

36 Mbit

2

215 mA, 255 mA

5.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

10 Weeks

TQFP-100

YES

100

100

FLATPACK, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

6.5 ns

70 °C

有

GS816032DGT-200

524288 words

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

4.85

QFP

有

200 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

Tray

GS816032DGT

3A991.B.2.B

Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

COMMERCIAL

18 Mbit

SYNCHRONOUS

210 mA

6.5 ns

512 k x 32

1.6 mm

32

SRAM

16777216 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm