N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

-40 to 85 °C

Tray

GS88136CGD

Pipeline/Flow Through

Memory & Data Storage

9 Mbit

1

160 mA, 190 mA

6.5 ns

Flow-Through/Pipelined

256 k x 36

17 Bit

SRAM

9 Mbit

Industrial

SRAM

N/A

-

10 Weeks, 3 Days

BGA-165

YES

165

165

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

Compliant

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

0.45 ns

85 °C

无

GS8342Q18BD-250I

250 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

1.9

BGA

Industrial grade

250 MHz

FBGA

QDR

1.8000 V

-40 to 100 °C

Tray

GS8342Q18BD

3A991.B.2.B

SigmaQuad-II

100 °C

-40 °C

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

1.8 V

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

675 mA

450 ps

Pipelined

2 M x 18

3-STATE

1.4 mm

18

20 Bit

SRAM

36 Mbit

0.215 A

37748736 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

10 Weeks

TQFP-100

YES

100

100

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

150 MHz

+ 70 C

3.6 V

0.550045 oz

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

有

GS8161Z18DGT-150

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

4.79

QFP

Commercial grade

133.3@Flow-Through/150@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

0 to 70 °C

Tray

GS8161Z18DGT

3A991.B.2.B

NBT

ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

COMMERCIAL

18 Mbit

2

SYNCHRONOUS

170 mA, 180 mA

7.5 ns

Flow-Through/Pipelined

1 M x 18

1.6 mm

18

20 Bit

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

8 Weeks

BGA-119

YES

119

119

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

SDR

Details

SyncBurst

GSI技术

GSI技术

Parallel

SMD/SMT

2.3 V

14

0 C

3.6 V

+ 70 C

150 MHz

有

BGA, BGA119,7X17,50

网格排列

3

2000000

PLASTIC/EPOXY

BGA119,7X17,50

未说明

7.5 ns

70 °C

有

GS832218AGB-150

150 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.56

BGA

Commercial grade

133@Flow-Through/150@Pipelined MHz

FBGA

SDR

0 to 85 °C

Tray

GS832218AGB

e1

有

3A991.B.2.B

Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

2.5/3.3 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

175 mA, 190 mA

7.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

21 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

8 Weeks

TQFP-100

YES

100

100

SDR

TQFP

153.8@Flow-Through/200@Pipelined MHz

有

200 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

未说明

6.5 ns

有

GS832036AGT-200I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

4.88

QFP

Industrial grade

表面贴装

2.7, 3.6 V

36 Bit

1 MWords

Synchronous

2.3, 3 V

2.5, 3.3 V

-40 to 100 °C

Tray

GS832036AGT

3A991.B.2.B

Pipeline/Flow Through

ALSO OPERATES AT 3.3; SYNCHRONOUS BURST

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

36 Mbit

4

SYNCHRONOUS

225 mA, 260 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

1.6 mm

36

20 Bit

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

BGA-119

119

GSI技术

NBT SRAM

Details

SDR

Commercial grade

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

0 to 70 °C

Tray

GS8642Z36GB

NBT Pipeline/Flow Through

Memory & Data Storage

72 Mbit

4

230 mA, 310 mA

7.5 ns

Flow-Through/Pipelined

2 M x 36

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

YES

165

165

LBGA,

GRID ARRAY, LOW PROFILE

3

4000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

有

GS81302D37GE-300

4194304 words

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

8.03

BGA

有

300 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Tray

GS81302D37GE

e1

有

3A991.B.2.B

SigmaQuad-II+ B4

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

144 Mbit

SYNCHRONOUS

915 mA

450 ps

4 M x 36

1.5 mm

36

SRAM

150994944 bit

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

8 Weeks

TQFP-100

YES

100

100

2 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

2000000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

6.5 ns

85 °C

有

GS8320Z18AGT-200

200 MHz

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

1.71

QFP

Commercial grade

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

0 to 85 °C

Tray

GS8320Z18AGT

3A991.B.2.B

NBT Pipeline/Flow Through

85 °C

0 °C

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

OTHER

36 Mbit

2

SYNCHRONOUS

185 mA, 220 mA

6.5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.6 mm

18

21 b

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

20 mm

14 mm

无

N/A

-

8 Weeks

TQFP-100

YES

100

100

1 MWords

32 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

QFP

4.87

GSI TECHNOLOGY

活跃

RECTANGULAR

LQFP

1.8 V

GS832032AGT-200V

有

85 °C

6.5 ns

未说明

PLASTIC/EPOXY

1000000

FLATPACK, LOW PROFILE

LQFP,

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

0 to 85 °C

Tray

GS832032AGT

3A991.B.2.B

同步突发

ALSO OPERTAES AT 2.5, SYNCHRONOUS BURST

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

不合格

OTHER

36 Mbit

4

SYNCHRONOUS

215 mA, 250 mA

6.5 ns

Flow-Through/Pipelined

1 M x 32

1.6 mm

32

20 Bit

SRAM

36 Mbit

33554432 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

20 mm

14 mm

N/A

-

BGA-165

165

GSI技术

GSI技术

NBT SRAM

SDR

Industrial grade

153.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 85 C

3.6 V

- 40 C

15

2.3 V

SMD/SMT

Parallel

-40 to 85 °C

Tray

GS8644Z18E

NBT

Memory & Data Storage

72 Mbit

2

275 mA, 395 mA

6.5 ns

Flow-Through/Pipelined

4 M x 18

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 70 C

3.6 V

0.324873 oz

0 C

15

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

BGA, BGA165,11X15,40

网格排列

3

2000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

6.5 ns

70 °C

有

GS8644Z36GE-200

200 MHz

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.61

BGA

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

0 to 70 °C

Tray

GS8644Z36GE

e1

有

3A991.B.2.B

NBT

Tin/Silver/Copper (Sn/Ag/Cu)

ALSO OPERATES AT 3.3V SUPPLY; PIPELINED OR FLOW-THROUGH ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

2.5/3.3 V

COMMERCIAL

72 Mbit

4

SYNCHRONOUS

270 mA, 345 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

3-STATE

1.5 mm

36

21 Bit

SRAM

72 Mbit

0.12 A

75497472 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

2.3 V

2.7 V

2.3 V

SRAM

17 mm

15 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

1.7, 2.3 V

Synchronous

512 kWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

0.368052 oz

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS8162Z36DGD-200IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.77

BGA

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

-40 to 100 °C

Tray

GS8162Z36DGD

3A991.B.2.B

NBT Pipeline/Flow Through

100 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

18 Mbit

4

SYNCHRONOUS

225 mA, 230 mA

6.5 ns

Flow-Through/Pipelined

512 k x 36

1.4 mm

36

19 Bit

SRAM

18 Mbit

18874368 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

无

N/A

-

12 Weeks

TQFP-100

YES

100

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

3

128000

PLASTIC/EPOXY

-40 °C

未说明

7 ns

85 °C

有

GS84036CGT-166I

131072 words

3.3 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

1.7

有

166 MHz

+ 85 C

3.6 V

0.262103 oz

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

-40 to 85 °C

Tray

GS84036CGT

3A991.B.2.B

Pipeline/Flow Through

Pure Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

INDUSTRIAL

4 Mbit

SYNCHRONOUS

155 mA, 250 mA

7 ns

128 k x 36

1.6 mm

36

SRAM

4718592 bit

PARALLEL

缓存SRAM

3.6 V

3 V

SRAM

20 mm

14 mm

N/A

-

8 Weeks

表面贴装

BGA-165

YES

165

165-FPBGA (13x15)

165

表面贴装

2.7, 3.6 V

36 Bit

256 kWords

Synchronous

2.3, 3 V

2.5, 3.3 V

Compliant

有

333 MHz

+ 85 C

3.6 V

GSI Technology Inc.

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

活跃

GS882Z36

Tray

LBGA,

GRID ARRAY, LOW PROFILE

3

256000

PLASTIC/EPOXY

-40 °C

未说明

4.5 ns

85 °C

有

GS882Z36CGD-333I

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

FBGA

SDR

-40 to 85 °C

Tray

GS882Z36CGD

e1

有

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, ZBT

2.3V ~ 2.7V, 3V ~ 3.6V

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

9 Mbit

4

SYNCHRONOUS

333 MHz

200 mA, 260 mA

4.5 ns

SRAM

Parallel

Flow-Through/Pipelined

256 k x 36

1.4 mm

36

-

18 Bit

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

256K x 36

15 mm

13 mm

无

N/A

-

表面贴装

TQFP-100

100

100-TQFP (20x14)

GSI Technology Inc.

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Tray

GS864036

活跃

Industrial grade

181.8@Flow-Through/300@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

2 MWords

36 Bit

2.7, 3.6 V

表面贴装

Compliant

有

300 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

-40 to 85 °C

Tray

GS864036GT

Pipeline/Flow Through

85 °C

-40 °C

Memory & Data Storage

SRAM - Synchronous, Standard

2.3V ~ 2.7V, 3V ~ 3.6V

72 Mbit

4

300 MHz

320 mA, 440 mA

5.5 ns

SRAM

Parallel

Flow-Through/Pipelined

2 M x 36

-

21 Bit

SRAM

72 Mbit

Industrial

SRAM

2M x 36

无

N/A

-

表面贴装

BGA-165

165

165-FPBGA (13x15)

GSI Technology Inc.

Parallel

GSI技术

GSI技术

SigmaDDR-II

Details

DDR

Tray

GS8662T

活跃

Industrial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8662T36BGD

SigmaDDR-II B2

Memory & Data Storage

SRAM - Quad Port, Synchronous, DDR II

1.7V ~ 1.9V

72 Mbit

1

400 MHz

810 mA

SRAM

Parallel

Pipelined

2 M x 36

-

21 Bit

SRAM

72 Mbit

Industrial

SRAM

2M x 36

N/A

-

表面贴装

BGA-165

165

165-FPBGA (13x15)

GSI Technology Inc.

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Tray

GS8662Q

活跃

Industrial grade

357 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

357 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8662Q37BGD

SigmaQuad-II+ B2

Memory & Data Storage

SRAM - Quad Port, Synchronous, QDR II+

1.7V ~ 1.9V

72 Mbit

2

357 MHz

1.205 A

SRAM

Parallel

Pipelined

2 M x 36

-

20 Bit

SRAM

72 Mbit

Industrial

SRAM

2M x 36

N/A

-

10 Weeks

表面贴装

TQFP-100

YES

100

100-TQFP (20x14)

100

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

有

333 MHz

+ 100 C

3.6 V

GSI Technology Inc.

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

活跃

GS816018

Tray

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

未说明

4.5 ns

85 °C

有

GS816018DGT-333I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.28

QFP

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

TQFP

SDR

2.5, 3.3 V

-40 to 100 °C

Bulk

GS816018DGT

3A991.B.2.B

Pipeline/Flow Through

100 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, Standard

2.3V ~ 2.7V, 3V ~ 3.6V

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

333 MHz

260 mA, 305 mA

4.5 ns

SRAM

Parallel

Flow-Through/Pipelined

1 M x 18

1.6 mm

8

-

21 Bit

SRAM

18 Mbit

8388608 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

1M x 18

20 mm

14 mm

无

N/A

-

8 Weeks

表面贴装

TQFP-100

YES

100

100-TQFP (20x14)

100

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

Compliant

有

333 MHz

+ 85 C

3.6 V

GSI Technology Inc.

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Tray

GS88018

活跃

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

512000

PLASTIC/EPOXY

QFP100,.63X.87

-40 °C

未说明

4.5 ns

85 °C

有

GS88018CGT-333I

333 MHz

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.26

QFP

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

-40 to 85 °C

Tray

GS88018CGT

e3

有

3A991.B.2.B

Pipeline/Flow Through

纯哑光锡

85 °C

-40 °C

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

SRAM - Synchronous, Standard

2.3V ~ 2.7V, 3V ~ 3.6V

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

INDUSTRIAL

9 Mbit

2

SYNCHRONOUS

333 MHz

185 mA, 240 mA

4.5 ns

SRAM

Parallel

Flow-Through/Pipelined

512 k x 18

3-STATE

1.6 mm

18

-

19 Bit

SRAM

9 Mbit

0.045 A

9437184 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

SRAM

512K x 18

20 mm

14 mm

无

N/A

-

8 Weeks

表面贴装

BGA-165

YES

165

165-FPBGA (13x15)

165

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

357 MHz

+ 85 C

1.9 V

- 40 C

GSI Technology Inc.

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

活跃

GS8662Q

Tray

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8662Q36BGD-357I

357 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.3

BGA

Industrial grade

357 MHz

FBGA

-40 to 100 °C

Tray

GS8662Q36BGD

3A991.B.2.B

SigmaQuad-II

流水线结构

8542.32.00.41

Memory & Data Storage

SRAM - Quad Port, Synchronous, QDR II

1.7V ~ 1.9V

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

357 MHz

1.205 A

SRAM

Parallel

Pipelined

2 M x 36

3-STATE

1.4 mm

36

-

20 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

2M x 36

15 mm

13 mm

N/A

-

表面贴装

BGA-165

165

165-FPBGA (13x15)

GSI Technology Inc.

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Tray

GS8342D

活跃

Industrial grade

400 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

36 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8342D36BGD

SigmaQuad-II

Memory & Data Storage

SRAM - Quad Port, Synchronous, QDR II

1.7V ~ 1.9V

36 Mbit

2

400 MHz

915 mA

SRAM

Parallel

Pipelined

1 M x 36

-

18 Bit

SRAM

36 Mbit

Industrial

SRAM

1M x 36

N/A

-

表面贴装

BGA-165

165

165-FPBGA (13x15)

GSI Technology Inc.

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

DDR

Tray

GS8342Q

活跃

Industrial grade

357 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

18 Bit

1.9 V

表面贴装

有

357 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8342Q18BGD

SigmaQuad-II

Memory & Data Storage

SRAM - Quad Port, Synchronous, QDR II

1.7V ~ 1.9V

36 Mbit

2

357 MHz

955 mA

SRAM

Parallel

Pipelined

2 M x 18

-

20 Bit

SRAM

36 Mbit

Industrial

SRAM

2M x 18

N/A

-

YES

144

144

GRID ARRAY, THIN PROFILE, FINE PITCH

3

32000000

PLASTIC/EPOXY

未说明

70 °C

有

GS4576S18GL-18

33554432 words

1.8 V

TFBGA

RECTANGULAR

GSI技术

生命周期结束

GSI TECHNOLOGY

BGA

5.97

Compliant

TFBGA,

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

95 °C

0 °C

AUTO/SELF REFRESH

8542.32.00.32

CMOS

1.8 V

BOTTOM

BALL

260

1

0.8 mm

compliant

R-PBGA-B144

不合格

COMMERCIAL

1

SYNCHRONOUS

18 b

32MX18

1.2 mm

18

24 b

576 Mb

603979776 bit

533 MHz

DDR DRAM

1.9 V

1.7 V

多库页面突发

YES

18.5 mm

11 mm

无

N/A

-

BGA-260

Parallel

GSI技术

GSI技术

SigmaQuad-IIIe

N

DDR

有

550 MHz

+ 85 C

1.4 V

0 C

8

1.25 V

SMD/SMT

Tray

GS8673ED36BK

SigmaQuad-IIIe B4

Memory & Data Storage

72 Mbit

2.67 A

2 M x 36

SRAM

SRAM

N/A

-

YES

44

44

TSOP2, TSOP44,.46,32

SMALL OUTLINE, THIN PROFILE

3

64000

PLASTIC/EPOXY

TSOP44,.46,32

未说明

10 ns

70 °C

无

GS71116ATP-10

TSOP2

5.13

GSI TECHNOLOGY

Obsolete

GSI技术

RECTANGULAR

TSOP2

3.3 V

65536 words

e0

3A991.B.2.B

锡铅

8542.32.00.41

SRAMs

CMOS

DUAL

鸥翼

未说明

1

0.8 mm

compliant

R-PDSO-G44

不合格

3.3 V

COMMERCIAL

ASYNCHRONOUS

0.1 mA

64KX16

3-STATE

1.2 mm

16

0.002 A

1048576 bit

PARALLEL

COMMON

标准SRAM

3 V

3.6 V

3 V

18.41 mm

10.16 mm