N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

250 MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

32 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

0 to 70 °C

Tray

GS88032CGT

同步突发

Memory & Data Storage

9 Mbit

4

140 mA, 180 mA

5.5 ns

Flow-Through/Pipelined

256 k x 32

18 Bit

SRAM

9 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Industrial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302T10GE

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

1.01 A

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

10 Weeks

TQFP-100

YES

100

100

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

32 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

512000

PLASTIC/EPOXY

-40 °C

未说明

4 ns

85 °C

有

GS816032DGT-400I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.34

QFP

Industrial grade

250@Flow-Through/400@Pipelined MHz

TQFP

SDR

-40 to 100 °C

Tray

GS816032DGT

3A991.B.2.B

Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

INDUSTRIAL

18 Mbit

4

SYNCHRONOUS

300 mA, 385 mA

4 ns

Flow-Through/Pipelined

512 k x 32

1.6 mm

32

20 Bit

SRAM

18 Mbit

16777216 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

8 Weeks

BGA-119

YES

119

119

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

BGA,

网格排列

3

2000000

PLASTIC/EPOXY

BGA

5.18

GSI TECHNOLOGY

活跃

RECTANGULAR

BGA

1.8 V

GS864236GB-250IV

有

85 °C

6.5 ns

未说明

-40 °C

Industrial grade

153.8@Flow-Through/250@Pipelined MHz

FBGA

-40 to 85 °C

Tray

GS864236GB

e1

有

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

72 Mbit

4

SYNCHRONOUS

275 mA, 380 mA

6.5 ns

Flow-Through/Pipelined

2 M x 36

1.99 mm

36

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

550 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8342T06BD-550I

550 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Industrial grade

550 MHz

FBGA

-40 to 100 °C

Tray

GS8342T06BD

e0

3A991.B.2.B

SigmaQuad-II+

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

1

SYNCHRONOUS

810 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

21 Bit

SRAM

36 Mbit

0.265 A

33554432 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

Synchronous

2 MWords

36 Bit

表面贴装

有

250 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8662Q36BD-250I

250 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.28

BGA

Industrial grade

250 MHz

FBGA

QDR

1.8000 V

-40 to 100 °C

Tray

GS8662Q36BD

e0

无

3A991.B.2.B

SigmaQuad-II

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

905 mA

Pipelined

2 M x 36

3-STATE

1.4 mm

36

20 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

10 Weeks

TQFP-100

YES

100

100

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

+ 100 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

400 MHz

有

LQFP,

FLATPACK, LOW PROFILE

1000000

PLASTIC/EPOXY

-40 °C

未说明

4 ns

85 °C

有

GS816018DGT-400I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.32

QFP

Industrial grade

250@Flow-Through/400@Pipelined MHz

TQFP

SDR

-40 to 100 °C

Tray

GS816018DGT

3A991.B.2.B

Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

0.65 mm

compliant

R-PQFP-G100

INDUSTRIAL

18 Mbit

2

SYNCHRONOUS

275 mA, 355 mA

4 ns

Flow-Through/Pipelined

1 M x 18

1.6 mm

8

21 Bit

SRAM

18 Mbit

8388608 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662D20BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2

695 mA

Pipelined

4 M x 18

20 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

0 to 70 °C

Tray

GS88118CD

同步突发

Memory & Data Storage

9 Mbit

1

125 mA, 165 mA

5.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

550 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

550 MHz

FBGA

DDR

-40 to 100 °C

72 Mbit

1

1.095 A

Pipelined

2 M x 36

20 Bit

72 Mbit

Industrial

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Commercial grade

表面贴装

1.9 V

8 Bit

4 MWords

Synchronous

1.7 V

1.8000 V

DDR

FBGA

400 MHz

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342TT07BGD

SigmaDDR-II+ B2

Memory & Data Storage

36 Mbit

1

600 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

12 Weeks

BGA-165

YES

165

165

LBGA,

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

无

GS81302TT38E-400

1.8 V

LBGA

RECTANGULAR

GSI技术

不推荐

GSI TECHNOLOGY

5.06

BGA

400 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

0 to 85 °C

GS81302TT38E

无

3A991.B.2.B

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

144 Mbit

1

SYNCHRONOUS

995 mA

Pipelined

4MX36

1.5 mm

36

21 Bit

144 Mbit

150994944 bit

Commercial

PARALLEL

DDR SRAM

1.9 V

1.7 V

17 mm

15 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

36 Bit

1 MWords

Synchronous

1.7 V

1.8000 V

DDR

FBGA

500 MHz

有

500 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8342TT38BD-500I

500 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Industrial grade

表面贴装

1.9 V

-40 to 100 °C

Tray

GS8342TT38BD

e0

3A991.B.2.B

SigmaQuad-II+

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

1

SYNCHRONOUS

955 mA

Pipelined

1 M x 36

3-STATE

1.4 mm

36

19 Bit

SRAM

36 Mbit

37748736 bit

Industrial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-119

119

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

300 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

Commercial grade

200@Flow-Through/300@Pipelined MHz

FBGA

SDR

0 to 70 °C

GS882Z36CGB

9 Mbit

4

165 mA, 225 mA

5 ns

Flow-Through/Pipelined

256 k x 36

18 Bit

9 Mbit

Commercial

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

357 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

357 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8342QT10BD

SigmaQuad-II+ B2

Memory & Data Storage

36 Mbit

2

955 mA

Pipelined

4 M x 9

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

10 Weeks

BGA-119

YES

119

119

2.3, 3 V

Synchronous

8 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

167 MHz

+ 70 C

3.6 V

0 C

10

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

BGA,

网格排列

8000000

PLASTIC/EPOXY

未说明

8 ns

70 °C

无

GS8128418B-167

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

BGA

5.22

Commercial grade

125@Flow-Through/167@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

0 to 70 °C

Tray

GS8128418B

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

PIPELINE AND FLOW THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3V TO 3.6V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

COMMERCIAL

144 Mbit

2

SYNCHRONOUS

315 mA, 365 mA

8 ns

Flow-Through/Pipelined

8 M x 18

1.99 mm

18

23 Bit

SRAM

144 Mbit

150994944 bit

Commercial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

3

256000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS882Z36CGD-200IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.14

BGA

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

FBGA

-40 to 85 °C

Tray

GS882Z36CGD

e1

有

3A991.B.2.B

NBT

Tin/Silver/Copper (Sn/Ag/Cu)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

9 Mbit

4

SYNCHRONOUS

145 mA, 170 mA

6.5 ns

Flow-Through/Pipelined

256 k x 36

1.4 mm

36

18 Bit

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662DT20BGD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2

820 mA

Pipelined

4 M x 18

20 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662TT37BD

SigmaDDR-II+ B2

Memory & Data Storage

72 Mbit

1

800 mA

Pipelined

2 M x 36

20 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

32 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 85 C

2.7 V

- 40 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

5 ns

85 °C

无

GS8321Z32AD-333IV

333 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.16

BGA

Industrial grade

200@Flow-Through/333@Pipelined MHz

FBGA

-40 to 100 °C

Tray

GS8321Z32AD

e0

无

3A991.B.2.B

NBT

Tin/Lead (Sn/Pb)

ALSO OPERATES AT 2.5V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.8/2.5 V

INDUSTRIAL

36 Mbit

4

SYNCHRONOUS

290 mA, 375 mA

5 ns

Flow-Through/Pipelined

1 M x 32

3-STATE

1.4 mm

32

20 Bit

SRAM

36 Mbit

0.04 A

33554432 bit

Industrial

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

BGA-209

YES

209

209

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

8.5 ns

70 °C

无

GS832272C-133V

524288 words

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.14

BGA

117.6@Flow-Through/133@Pipelined MHz

FBGA

1.8, 2.5 V

1.7, 2.3 V

Synchronous

72 Bit

2, 2.7 V

133 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

0 to 70 °C

GS832272C

无

3A991.B.2.B

FLOW-THROUGH OR PIELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

未说明

R-PBGA-B209

不合格

COMMERCIAL

36 Mbit

SYNCHRONOUS

210 mA, 235 mA

8.5@Flow-Through/4@P

512 k x 72

1.7 mm

72

19 Bit

36

PARALLEL

缓存SRAM

2 V

1.7 V

22 mm

14 mm

N/A

-

BGA-209

209

SyncBurst

N

SDR

Commercial grade

153.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

72 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

0 C

14

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 70 °C

Tray

GS832272C

同步突发

Memory & Data Storage

36 Mbit

8

275 mA, 380 mA

6.5 ns

Flow-Through/Pipelined

512 k x 72

19 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

9 Bit

1.9 V

有

500 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

Commercial grade

0 to 85 °C

Tray

GS81302DT11GE

SigmaQuad-II+

Memory & Data Storage

144 Mbit

1.26 A

0.45

16 M x 9

SRAM

144

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

有

500 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS8662D06BD-500I

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.23

BGA

Industrial grade

500 MHz

FBGA

QDR

1.8000 V

-40 to 100 °C

Tray

GS8662D06BD

3A991.B.2.B

SigmaQuad-II+

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

900 mA

Pipelined

8 M x 8

1.4 mm

8

21 Bit

SRAM

72 Mbit

67108864 bit

Industrial

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SigmaQuad-II

Details

DDR

Commercial grade

350 MHz

FBGA

QDR

1.8000 V

Synchronous

8 MWords

9 Bit

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS8662D09BGD

SigmaQuad-II

Memory & Data Storage

72 Mbit

2

695 mA

Pipelined

8 M x 9

21 Bit

SRAM

72 Mbit

Commercial

SRAM