N/A

-

8 Weeks

BGA-165

YES

165

165

1.7, 2.3 V

Synchronous

256 kWords

36 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

LBGA,

GRID ARRAY, LOW PROFILE

256000

PLASTIC/EPOXY

-40 °C

未说明

7.5 ns

85 °C

无

GS88236CD-150IV

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.13

BGA

Industrial grade

133.3@Flow-Through/150@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

-40 to 85 °C

Tray

GS88236CD

e0

无

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

9 Mbit

4

SYNCHRONOUS

130 mA, 145 mA

7.5 ns

Flow-Through/Pipelined

256 k x 36

1.4 mm

36

18 Bit

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

缓存SRAM

2 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

357 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

357 MHz

FBGA

QDR

0 to 85 °C

72 Mbit

2

985 mA

Pipelined

4 M x 18

21 Bit

72 Mbit

Commercial

N/A

-

8 Weeks

YES

165

165

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS8662QT37BGD-200I

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.21

BGA

Industrial grade

200 MHz

FBGA

QDR

1.8000 V

表面贴装

1.9 V

36 Bit

2 MWords

Synchronous

1.7 V

LBGA,

GRID ARRAY, LOW PROFILE

3

2000000

-40 to 100 °C

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

2

SYNCHRONOUS

Pipelined

2MX36

1.4 mm

36

20 Bit

72 Mbit

75497472 bit

Industrial

PARALLEL

QDR SRAM

1.9 V

1.7 V

15 mm

13 mm

N/A

-

BGA-165

165

DDR-II

Industrial grade

300 MHz

FBGA

DDR

1.8000 V

Synchronous

16 MWords

8 Bit

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

-40 to 100 °C

Tray

GS81302TT07E

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

700 mA

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Commercial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662TT20BGD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

1

695 mA

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

512 kWords

32 Bit

2.7, 3.6 V

表面贴装

375 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

Commercial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

0 to 70 °C

GS8161Z32DGD

18 Mbit

4

270 mA, 350 mA

4.2 ns

Flow-Through/Pipelined

512 k x 32

18 Mbit

Commercial

N/A

-

8 Weeks

BGA-165

YES

165

165

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

无

GS8662R08BD-400I

400 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Industrial grade

400 MHz

FBGA

-40 to 100 °C

Tray

GS8662R08BD

3A991.B.2.B

SigmaDDR-II B4

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

72 Mbit

1

SYNCHRONOUS

635 mA

Pipelined

8 M x 8

3-STATE

1.4 mm

8

21 Bit

SRAM

72 Mbit

67108864 bit

Industrial

PARALLEL

COMMON

标准SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

- 55 C

3.6 V

+ 125 C

375 MHz

有

Military grade

238@Flow-Through/375@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

SDR

NBT SRAM

GSI技术

GSI技术

Parallel

SMD/SMT

2.3 V

14

-55 to 125 °C

Tray

GS8322Z36AD

NBT Pipeline/Flow Through

Memory & Data Storage

36 Mbit

4

310 mA, 400 mA

4.2 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Military

SRAM

N/A

-

165

18 Bit

表面贴装

Industrial grade

550 MHz

FBGA

DDR

1.8000 V

Synchronous

4 MWords

-40 to 100 °C

1

Pipelined

21 Bit

72 Mbit

Industrial

N/A

-

BGA-209

209

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

Industrial grade

200@Flow-Through/300@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

300 MHz

+ 85 C

3.6 V

- 40 C

21

2.3 V

SMD/SMT

-40 to 85 °C

Tray

GS8162Z72CC

NBT Pipeline/Flow Through

Memory & Data Storage

18 Mbit

8

300 mA, 425 mA

5 ns

Flow-Through/Pipelined

256 k x 72

18 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

QDR

1.8000 V

1.7 V

Synchronous

1 MWords

18 Bit

1.9 V

表面贴装

有

435 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

1000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

无

GS8182D19BD-435

435 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.21

BGA

Commercial grade

435 MHz

FBGA

0 to 70 °C

Tray

GS8182D19BD

e0

无

3A991.B.2.B

SigmaQuad II+

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

18 Mbit

2

SYNCHRONOUS

770 mA

Pipelined

1 M x 18

3-STATE

1.4 mm

18

18 Bit

SRAM

18 Mbit

0.19 A

18874368 bit

Commercial

PARALLEL

SEPARATE

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

10 mm

N/A

-

BGA-165

165

2.5, 3.3 V

2.3, 3 V

Synchronous

32 Bit

2.7, 3.6 V

有

400 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

SDR

250@Flow-Through/400@Pipelined MHz

-40 to 85 °C

Tray

GS816132DD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

300 mA, 385 mA

4@Flow-Through/2.5@P

512 k x 32

19 Bit

SRAM

18

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8342DT07BD

SigmaQuad-II+ B4

Memory & Data Storage

36 Mbit

2

795 mA

Pipelined

4 M x 8

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

DDR

Military grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

450 MHz

+ 125 C

1.9 V

- 55 C

15

1.7 V

SMD/SMT

-55 to 125 °C

Tray

GS8662TT20BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

1

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Military

SRAM

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

333 MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

0 to 70 °C

Tray

GS88037CGT

Pipeline

Memory & Data Storage

9 Mbit

1

240 mA

Pipelined

256 k x 36

18 Bit

SRAM

9 Mbit

Commercial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8342T07BGD-400

400 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.22

BGA

Commercial grade

400 MHz

FBGA

0 to 85 °C

Tray

GS8342T07BGD

3A991.B.2.B

SigmaDDR-II+ B2

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

36 Mbit

1

SYNCHRONOUS

600 mA

Pipelined

4 M x 8

3-STATE

1.4 mm

8

21 Bit

SRAM

36 Mbit

0.215 A

33554432 bit

Commercial

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

YES

165

165

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS8662QT19BGD-200I

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.2

BGA

Industrial grade

200 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

LBGA,

GRID ARRAY, LOW PROFILE

3

4000000

-40 to 100 °C

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

2

SYNCHRONOUS

Pipelined

4MX18

1.4 mm

18

21 Bit

72 Mbit

75497472 bit

Industrial

PARALLEL

QDR SRAM

1.9 V

1.7 V

15 mm

13 mm

N/A

-

8 Weeks

YES

100

100

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

QFP100,.63X.87

-40 °C

未说明

8 ns

85 °C

有

GS840H18AGT-180I

180 MHz

262144 words

3.3 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.35

QFP

e3

有

3A991.B.2.B

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3,3.3 V

INDUSTRIAL

SYNCHRONOUS

0.345 mA

256KX18

3-STATE

1.6 mm

18

0.03 A

4718592 bit

PARALLEL

COMMON

缓存SRAM

3.14 V

3.6 V

3 V

20 mm

14 mm

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

Commercial grade

133.3@Flow-Through/200@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

36 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 70 C

2.7 V

0 C

14

1.7 V

0 to 70 °C

Tray

GS864236B

SCD/DCD Pipeline/Flow Through

Memory & Data Storage

72 Mbit

4

230 mA, 310 mA

7.5 ns

Flow-Through/Pipelined

2 M x 36

21 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

500 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS8662DT11BD-500I

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.81

BGA

Industrial grade

500 MHz

FBGA

QDR

1.8000 V

-40 to 100 °C

Tray

GS8662DT11BD

3A991.B.2.B

SigmaQuad-II+

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

900 mA

Pipelined

8 M x 9

1.4 mm

9

21 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

10 Weeks

TQFP-100

YES

100

100

1 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

QFP,

FLATPACK

1000000

PLASTIC/EPOXY

未说明

4 ns

70 °C

有

GS816118DGT-400

2.5 V

QFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.26

QFP

Commercial grade

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

0 to 70 °C

Tray

GS816118DGT

3A991.B.2.B

Pipeline/Flow Through

FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

未说明

1

compliant

R-PQFP-G100

COMMERCIAL

18 Mbit

2

SYNCHRONOUS

255 mA, 335 mA

4 ns

Flow-Through/Pipelined

1 M x 18

18

SRAM

18 Mbit

18874368 bit

Commercial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

N/A

-

8 Weeks

TQFP-100

YES

100

100

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

+ 85 C

2.7 V

- 40 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

512000

PLASTIC/EPOXY

QFP100,.63X.87

-40 °C

未说明

6.5 ns

85 °C

有

GS880F18CGT-6.5IV

153 MHz

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

QFP

Industrial grade

153.8 MHz

-40 to 85 °C

Tray

GS880F18CGT

e3

有

3A991.B.2.B

流过

纯哑光锡

FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 2.3 V TO 2.7 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

1.8/2.5 V

INDUSTRIAL

9 Mbit

2

SYNCHRONOUS

125 mA

6.5 ns

Flow-Through

512 k x 18

3-STATE

1.6 mm

18

SRAM

9 Mbit

0.045 A

9437184 bit

Industrial

PARALLEL

COMMON

缓存SRAM

1.7 V

2 V

1.7 V

SRAM

20 mm

14 mm

N/A

-

BGA-209

209

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

72 Bit

2, 2.7 V

表面贴装

225 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

Commercial grade

143@Flow-Through/225@Pipelined MHz

FBGA

SDR

0 to 70 °C

GS8322Z72GC

36 Mbit

8

255 mA, 350 mA

7 ns

Flow-Through/Pipelined

512 k x 72

19 Bit

36 Mbit

Commercial

N/A

-

BGA-165

165

表面贴装

400 MHz

+ 70 C

1.9 V

0 C

Parallel

SMD/SMT

1.7 V

Commercial grade

400 MHz

FBGA

DDR

1.8000 V

Synchronous

2 MWords

36 Bit

0 to 85 °C

72 Mbit

1

800 mA

Pipelined

2 M x 36

21 Bit

72 Mbit

Commercial

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8662DT19BD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

2

590 mA

Pipelined

4 M x 18

20 Bit

SRAM

72 Mbit

Industrial

SRAM