N/A

-

8 Weeks

BGA-165

YES

165

165

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

LBGA,

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS8662D19BD-450I

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.45

BGA

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

-40 to 100 °C

Tray

GS8662D19BD

e0

无

3A991.B.2.B

SigmaQuad-II+ B4

Tin/Lead (Sn/Pb)

管道结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

830 mA

Pipelined

4 M x 18

1.4 mm

18

20 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

8 Weeks

BGA-165

YES

100

165

BGA,

网格排列

256000

PLASTIC/EPOXY

未说明

7.5 ns

70 °C

无

GS881Z32CD-150

262144 words

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.29

QFP

有

150 MHz

+ 70 C

3.6 V

0 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

N

SDR

Tray

GS881Z32CD

e0

无

3A991.B.2.B

NBT Pipeline/Flow Through

Tin/Lead (Sn/Pb)

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

鸥翼

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

COMMERCIAL

9 Mbit

SYNCHRONOUS

130 mA, 140 mA

7.5 ns

256 k x 32

1.4 mm

32

SRAM

8388608 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

BGA-209

209

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

117.6@Flow-Through/133@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

72 Bit

2, 2.7 V

表面贴装

有

133 MHz

+ 70 C

2.7 V

0 C

14

1.7 V

0 to 70 °C

Tray

GS8322Z72GC

NBT

Memory & Data Storage

36 Mbit

8

210 mA, 235 mA

8.5 ns

Flow-Through/Pipelined

512 k x 72

19 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

8 Weeks

YES

100

100

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

8 ns

70 °C

有

GS840H18AGT-180

180 MHz

262144 words

3.3 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.35

QFP

LQFP, QFP100,.63X.87

e3

有

3A991.B.2.B

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE

8542.32.00.41

SRAMs

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3,3.3 V

COMMERCIAL

SYNCHRONOUS

0.335 mA

256KX18

3-STATE

1.6 mm

18

0.02 A

4.5

PARALLEL

COMMON

缓存SRAM

3.14 V

3.6 V

3 V

20 mm

14 mm

N/A

-

BGA-209

209

Parallel

GSI技术

GSI技术

SyncBurst

SDR

Industrial grade

250 MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 85 C

3.6 V

- 40 C

21

2.3 V

SMD/SMT

-40 to 85 °C

Tray

GS816273CC

Pipeline

Memory & Data Storage

18 Mbit

8

360 mA

Pipelined

256 k x 72

18 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

300 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA

5.67

GSI TECHNOLOGY

活跃

GSI技术

RECTANGULAR

LBGA

1.8 V

GS8662D37BGD-300

有

70 °C

0.45 ns

未说明

Commercial grade

300 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

36 Bit

1.9 V

表面贴装

0 to 85 °C

3A991.B.2.B

管道结构

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

735 mA

Pipelined

2 M x 36

1.4 mm

36

19 Bit

72 Mbit

75497472 bit

Commercial

PARALLEL

DDR SRAM

1.9 V

1.7 V

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

250@Flow-Through/400@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

32 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

-40 to 85 °C

Tray

GS8161Z32DGD

NBT

Memory & Data Storage

18 Mbit

4

300 mA, 385 mA

4 ns

Flow-Through/Pipelined

512 k x 32

19 Bit

SRAM

18 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302TT19E

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

810 mA

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

TQFP-100

100

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

32 Bit

2.7, 3.6 V

表面贴装

有

400 MHz

+ 70 C

3.6 V

0 C

18

2.3 V

SMD/SMT

Parallel

0 to 85 °C

Tray

GS832032AGT

Pipeline/Flow Through

Memory & Data Storage

36 Mbit

4

285 mA, 395 mA

4 ns

Flow-Through/Pipelined

1 M x 32

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Commercial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

300 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662TT19BGD

SigmaDDR-II+ B2

Memory & Data Storage

72 Mbit

1

495 mA

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Industrial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

300 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302TT10E

SigmaDDR-II+ B2

Memory & Data Storage

144 Mbit

1

700 mA

Pipelined

16 M x 9

23 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

1 MWords

18 Bit

1.9 V

表面贴装

435 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

435 MHz

FBGA

QDR

-40 to 85 °C

GS8182D19BD

18 Mbit

2

780 mA

Pipelined

1 M x 18

18 Bit

18 Mbit

Industrial

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

-40 to 100 °C

Tray

GS81302T20GE

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1

810 mA

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

8 MWords

8 Bit

1.9 V

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaCIO DDR-II

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8662R08BGD-350I

350 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

BGA

Industrial grade

350 MHz

FBGA

1.8000 V

1.7 V

-40 to 100 °C

Tray

GS8662R08BGD

3A991.B.2.B

SigmaDDR-II B4

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

72 Mbit

SYNCHRONOUS

600 mA

0.45

8 M x 8

3-STATE

1.4 mm

8

SRAM

72

Industrial

PARALLEL

COMMON

标准SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

10 Weeks

BGA-165

YES

165

165

18 Bit

1.9 V

表面贴装

450 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

BGA165,11X15,40

-40 °C

未说明

0.45 ns

85 °C

有

GS8342D19BGD-450I

450 MHz

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.22

BGA

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

2 MWords

-40 to 100 °C

3A991.B.2.B

流水线结构

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

36 Mbit

2

SYNCHRONOUS

795 mA

Pipelined

2 M x 18

3-STATE

1.4 mm

18

19 Bit

36 Mbit

0.25 A

37748736 bit

Industrial

PARALLEL

SEPARATE

QDR SRAM

1.7 V

1.9 V

1.7 V

15 mm

13 mm

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Industrial grade

318 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

318 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS81302QT37E

SigmaQuad-II+ B2

Memory & Data Storage

144 Mbit

2

1.45 A

Pipelined

4 M x 36

21 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

Commercial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

8 Bit

1.9 V

表面贴装

有

333 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8342Q07BD

SigmaQuad-II+ B2

Memory & Data Storage

36 Mbit

2

885 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SigmaQuad-II

Details

DDR

Industrial grade

333 MHz

FBGA

QDR

1.8000 V

Synchronous

8 MWords

8 Bit

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

-40 to 100 °C

Tray

GS8662Q08BGD

SigmaQuad-II

Memory & Data Storage

72 Mbit

2

930 mA

Pipelined

8 M x 8

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Industrial grade

200@Flow-Through/333@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 85 C

2.7 V

- 40 C

14

1.7 V

-40 to 100 °C

Tray

GS8322Z18AGB

NBT

Memory & Data Storage

36 Mbit

2

265 mA, 350 mA

5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

FBGA

SDR

1.8000 V

1.7 V

Synchronous

512 kWords

36 Bit

1.9 V

表面贴装

有

435 MHz

+ 70 C

1.9 V

0 C

18

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

LBGA, BGA165,11X15,40

GRID ARRAY, LOW PROFILE

3

512000

PLASTIC/EPOXY

BGA165,11X15,40

未说明

0.45 ns

70 °C

有

GS8182D37BGD-435

435 MHz

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.21

BGA

Commercial grade

435 MHz

0 to 70 °C

Tray

GS8182D37BGD

e1

有

3A991.B.2.B

SigmaQuad II+

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

COMMERCIAL

18 Mbit

2

SYNCHRONOUS

890 mA

Pipelined

512 k x 36

3-STATE

1.4 mm

36

17 Bit

SRAM

18 Mbit

0.19 A

18874368 bit

Commercial

PARALLEL

SEPARATE

DDR SRAM

1.7 V

1.9 V

1.7 V

SRAM

15 mm

10 mm

N/A

-

BGA-165

165

SigmaQuad-II

Details

DDR

Commercial grade

357 MHz

FBGA

QDR

1.8000 V

Synchronous

8 MWords

9 Bit

表面贴装

有

357 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS8662Q09BGD

SigmaQuad-II

Memory & Data Storage

72 Mbit

2

985 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

8 Weeks

TQFP-100

YES

100

100

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

有

333 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

3

512000

PLASTIC/EPOXY

-40 °C

未说明

4.5 ns

85 °C

有

GS881E18CGT-333I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.53

QFP

Industrial grade

222.2@Flow-Through/333@Pipelined MHz

TQFP

-40 to 85 °C

Tray

GS881E18CGT

e3

有

3A991.B.2.B

DCD Pipeline/Flow Through

Matte Tin (Sn)

PIPELINED/FLOW-THROUGH ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

9 Mbit

2

SYNCHRONOUS

185 mA, 240 mA

4.5 ns

Flow-Through/Pipelined

512 k x 18

1.6 mm

18

18 Bit

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

BGA-209

209

GSI技术

SyncBurst

SDR

Industrial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

72 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 85 C

3.6 V

- 40 C

21

2.3 V

SMD/SMT

Parallel

GSI技术

-40 to 85 °C

Tray

GS816272CC

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

8

275 mA, 320 mA

5.5 ns

Flow-Through/Pipelined

256 k x 72

SRAM

18 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SigmaDDR-II+

Details

DDR

Industrial grade

450 MHz

FBGA

DDR

1.8000 V

Synchronous

4 MWords

8 Bit

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

-40 to 100 °C

Tray

GS8342TT06BGD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

1

680 mA

Pipelined

4 M x 8

21 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

8 Weeks

TQFP-100

YES

100

100

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

200 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

3

512000

PLASTIC/EPOXY

-40 °C

未说明

6.5 ns

85 °C

有

GS881Z18CGT-200IV

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.28

QFP

Industrial grade

153.8@Flow-Through/200@Pipelined MHz

TQFP

-40 to 85 °C

Tray

GS881Z18CGT

e3

有

3A991.B.2.B

NBT

Matte Tin (Sn)

IT ALSO OPERATE WITH 2.5 V, FLOW THROUGH AND PIPELINED ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

9 Mbit

1

SYNCHRONOUS

125 mA, 160 mA

6.5 ns

Flow-Through/Pipelined

512 k x 18

1.6 mm

18

18 Bit

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

ZBT SRAM

2 V

1.7 V

SRAM

20 mm

14 mm