N/A

-

8 Weeks

BGA-119

YES

119

119

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 70 C

2.7 V

0 C

14

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

BGA, BGA119,7X17,50

网格排列

2000000

PLASTIC/EPOXY

BGA119,7X17,50

未说明

5 ns

70 °C

有

GS8322Z18AGB-333V

333 MHz

1.8 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.27

BGA

Commercial grade

200@Flow-Through/333@Pipelined MHz

FBGA

0 to 85 °C

Tray

GS8322Z18AGB

3A991.B.2.B

NBT

ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

1.8/2.5 V

COMMERCIAL

36 Mbit

2

SYNCHRONOUS

245 mA, 330 mA

5 ns

Flow-Through/Pipelined

2 M x 18

3-STATE

1.99 mm

18

21 Bit

SRAM

36 Mbit

0.03 A

37748736 bit

Commercial

PARALLEL

COMMON

ZBT SRAM

1.7 V

2 V

1.7 V

SRAM

22 mm

14 mm

N/A

-

BGA-209

209

GSI技术

GSI技术

NBT SRAM

N

SDR

Commercial grade

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

72 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

SMD/SMT

Parallel

0 to 70 °C

Tray

GS8642Z72C

NBT Pipeline/Flow Through

Memory & Data Storage

72 Mbit

8

330 mA, 460 mA

6.5 ns

Flow-Through/Pipelined

1 M x 72

SRAM

72 Mbit

Commercial

SRAM

N/A

-

TQFP-100

100

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

250 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

0 to 70 °C

Tray

GS881Z18CGT

NBT

Memory & Data Storage

9 Mbit

1

125 mA, 165 mA

5.5 ns

Flow-Through/Pipelined

512 k x 18

18 Bit

SRAM

9 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Details

SDR

Commercial grade

200@Flow-Through/333@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

1 MWords

36 Bit

2, 2.7 V

表面贴装

有

333 MHz

+ 70 C

2.7 V

0 C

14

1.7 V

0 to 85 °C

Tray

GS8322Z36AGD

NBT

Memory & Data Storage

36 Mbit

4

270 mA, 355 mA

5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

TQFP-100

100

181.5@Flow-Through/250@Pipelined MHz

1.8, 2.5 V

1.7, 2.3 V

Synchronous

32 Bit

2, 2.7 V

有

250 MHz

+ 85 C

2.7 V

- 40 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

-40 to 85 °C

Tray

GS880E32CGT

DCD

Memory & Data Storage

9 Mbit

160 mA, 200 mA

5.5@Flow-Through/3@P

256 k x 32

SRAM

8

SRAM

N/A

-

12 Weeks

BGA-165

YES

165

165

Synchronous

16 MWords

8 Bit

表面贴装

有

500 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

LBGA,

GRID ARRAY, LOW PROFILE

3

16000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

有

GS81302DT06GE-500I

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.06

BGA

Industrial grade

500 MHz

FBGA

QDR

1.8000 V

-40 to 100 °C

Tray

GS81302DT06GE

e1

有

3A991.B.2.B

SigmaQuad-II+

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

144 Mbit

2

SYNCHRONOUS

1.27 A

Pipelined

16 M x 8

1.5 mm

8

22 Bit

SRAM

144 Mbit

134217728 bit

Industrial

PARALLEL

QDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

8 Weeks

BGA-165

YES

165

165

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

N

DDR

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

无

GS8662S08BD-333

1.8 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.49

BGA

Commercial grade

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

有

333 MHz

0 to 85 °C

Tray

GS8662S08BD

e0

无

3A991.B.2.B

SigmaSIO DDR-II

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

72 Mbit

SYNCHRONOUS

630 mA

0.45

8 M x 8

1.4 mm

8

SRAM

72

Commercial

PARALLEL

标准SRAM

1.9 V

1.7 V

SRAM

15 mm

13 mm

N/A

-

BGA-119

119

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Commercial grade

238@Flow-Through/375@Pipelined MHz

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

有

375 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

0 to 85 °C

Tray

GS832236AGB

Pipeline/Flow Through

Memory & Data Storage

36 Mbit

4

270 mA, 380 mA

4.2 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

8 Weeks

YES

165

165

GRID ARRAY, LOW PROFILE

BGA

5.2

GSI TECHNOLOGY

活跃

GSI技术

RECTANGULAR

LBGA

1.8 V

1048576 words

333 MHz

GS8182T19BD-333I

无

85 °C

0.45 ns

未说明

-40 °C

BGA165,11X15,40

PLASTIC/EPOXY

1000000

LBGA, BGA165,11X15,40

e0

无

3A991.B.2.B

Tin/Lead (Sn/Pb)

流水线结构

8542.32.00.41

SRAMs

CMOS

BOTTOM

BALL

未说明

1

1 mm

not_compliant

R-PBGA-B165

不合格

1.5/1.8,1.8 V

INDUSTRIAL

SYNCHRONOUS

0.45 mA

1MX18

3-STATE

1.4 mm

18

0.17 A

18874368 bit

PARALLEL

COMMON

DDR SRAM

1.7 V

1.9 V

1.7 V

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

表面贴装

有

333 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662QT10BGD

SigmaQuad-II+ B2

Memory & Data Storage

72 Mbit

2

930 mA

Pipelined

8 M x 9

22 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR-II

Commercial grade

450 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

0 to 85 °C

Tray

GS81302TT06E

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1

1 A

Pipelined

16 M x 8

23 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Industrial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

-40 to 100 °C

Tray

GS8662TT20BGD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

1

600 mA

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

10 Weeks

BGA-165

YES

165

165

333 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA,

GRID ARRAY, LOW PROFILE

512000

PLASTIC/EPOXY

未说明

4.5 ns

70 °C

有

GS8161E36DGD-333

524288 words

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.64

BGA

Commercial grade

222.2@Flow-Through/333@Pipelined MHz

2.5, 3.3 V

2.3, 3 V

Synchronous

36 Bit

2.7, 3.6 V

有

0 to 70 °C

Tray

GS8161E36DGD

3A991.B.2.B

DCD Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

18 Mbit

SYNCHRONOUS

260 mA, 315 mA

4.5@Flow-Through/2.5

512 k x 36

1.4 mm

36

19 Bit

SRAM

18

Commercial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

15 mm

13 mm

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

表面贴装

2, 2.7 V

18 Bit

2 MWords

Synchronous

1.7, 2.3 V

1.8, 2.5 V

SDR

FBGA

有

200 MHz

+ 70 C

2.7 V

0 C

18

1.7 V

0 to 85 °C

Tray

GS832218AD

Pipeline/Flow Through

Memory & Data Storage

36 Mbit

2

195 mA, 230 mA

6.5 ns

Flow-Through/Pipelined

2 M x 18

21 Bit

SRAM

36 Mbit

Commercial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

250 MHz

+ 70 C

2.7 V

0 C

1.7 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

2000000

PLASTIC/EPOXY

未说明

5.5 ns

85 °C

无

GS832118AD-250V

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.29

BGA

Commercial grade

181.8@Flow-Through/250@Pipelined MHz

FBGA

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

2 MWords

18 Bit

2, 2.7 V

表面贴装

0 to 85 °C

3A991.B.2.B

PIPELINE OR FLOW THROUGH ARCHITECTURE; ALSO OPERATES AT 2.5 SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

OTHER

36 Mbit

2

SYNCHRONOUS

225 mA, 265 mA

5.5 ns

Flow-Through/Pipelined

2 M x 18

1.4 mm

18

21 Bit

36 Mbit

37748736 bit

Commercial

PARALLEL

缓存SRAM

2 V

1.7 V

15 mm

13 mm

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

350 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

Industrial grade

350 MHz

FBGA

DDR

-40 to 100 °C

72 Mbit

1

600 mA

Pipelined

8 M x 8

22 Bit

72 Mbit

Industrial

N/A

-

165

Synchronous

16 MWords

8 Bit

1.9 V

表面贴装

有

10

GSI技术

GSI技术

SigmaQuad-II

Industrial grade

333 MHz

FBGA

QDR

1.8000 V

1.7 V

-40 to 100 °C

Tray

GS81302D08E

Memory & Data Storage

2

Pipelined

22 Bit

SRAM

144 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

1.7 V

10

0 C

1.9 V

+ 70 C

300 MHz

有

Commercial grade

300 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

DDR-II

Details

SigmaSIO DDR-II

GSI技术

GSI技术

Parallel

SMD/SMT

0 to 85 °C

Tray

GS81302S18GE

SigmaSIO DDR-II

Memory & Data Storage

144 Mbit

2

815 mA

Pipelined

8 M x 18

22 Bit

SRAM

144 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

DDR

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

4 MWords

9 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8342D11BD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

2

795 mA

Pipelined

4 M x 9

20 Bit

SRAM

36 Mbit

Industrial

SRAM

N/A

-

BGA-165

165

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR

Commercial grade

350 MHz

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

18 Bit

1.9 V

表面贴装

有

350 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

0 to 85 °C

Tray

GS8662TT19BGD

SigmaDDR-II+ B2

Memory & Data Storage

72 Mbit

1

590 mA

Pipelined

4 M x 18

21 Bit

SRAM

72 Mbit

Commercial

SRAM

N/A

-

BGA-165

165

250@Flow-Through/400@Pipelined MHz

FBGA

2.5, 3.3 V

2.3, 3 V

Synchronous

18 Bit

2.7, 3.6 V

有

400 MHz

+ 70 C

3.6 V

0 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

0 to 70 °C

Tray

GS816118DD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

255 mA, 335 mA

4@Flow-Through/2.5@P

1 M x 18

SRAM

18

SRAM

N/A

-

BGA-165

165

SigmaQuad-II+

Details

DDR

Commercial grade

500 MHz

FBGA

QDR

1.8000 V

Synchronous

8 MWords

8 Bit

表面贴装

有

500 MHz

+ 70 C

1.9 V

0 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

0 to 85 °C

Tray

GS8662DT06BGD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2

890 mA

Pipelined

8 M x 8

SRAM

72 Mbit

Commercial

SRAM

N/A

-

8 Weeks

YES

119

119

2000000

PLASTIC/EPOXY

-40 °C

未说明

8.5 ns

85 °C

无

GS864436B-133I

2097152 words

2.5 V

BGA

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.71

BGA

BGA,

网格排列

3

e0

无

3A991.B.2.B

锡铅

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES WITH 3.3V SUPPLY

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

SYNCHRONOUS

2MX36

1.99 mm

36

75497472 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

22 mm

14 mm

N/A

-

BGA-165

165

有

Industrial grade

450 MHz

FBGA

QDR

1.8000 V

Synchronous

8 MWords

8 Bit

表面贴装

DDR

SigmaQuad-II+

GSI技术

GSI技术

Parallel

SMD/SMT

1.7 V

15

- 40 C

1.9 V

+ 85 C

450 MHz

-40 to 100 °C

Tray

GS8662DT06BD

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2

830 mA

Pipelined

8 M x 8

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

8 Weeks

BGA-165

YES

165

165

表面贴装

450 MHz

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

LBGA,

GRID ARRAY, LOW PROFILE

3

8000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

有

GS8662D11BGD-450

1.8 V

LBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.5

BGA

Commercial grade

450 MHz

FBGA

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

9 Bit

1.9 V

0 to 85 °C

GS8662D11BGD

e1

有

3A991.B.2.B

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

72 Mbit

2

SYNCHRONOUS

820 mA

Pipelined

8 M x 9

1.4 mm

9

21 Bit

72 Mbit

75497472 bit

Commercial

PARALLEL

QDR SRAM

1.9 V

1.7 V

15 mm

13 mm