N/A

-

BGA-165

165

FBGA

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

1 MWords

36 Bit

2.7, 3.6 V

表面贴装

200 MHz

+ 70 C

3.6 V

0 C

2.3 V

SMD/SMT

Parallel

Commercial grade

153.8@Flow-Through/200@Pipelined MHz

0 to 85 °C

36 Mbit

4

205 mA, 240 mA

6.5 ns

Flow-Through/Pipelined

1 M x 36

20 Bit

36 Mbit

Commercial

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Tray

GS8672D37BE

SigmaQuad-II+

Memory & Data Storage

72 Mbit

2.07 A

2 M x 36

SRAM

72

SRAM

N/A

-

BGA-165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

DDR

有

300 MHz

+ 70 C

1.9 V

0 C

18

Tray

GS8182D19BD

SigmaQuad II+

Memory & Data Storage

18 Mbit

490 mA

1 M x 18

SRAM

SRAM

N/A

-

BGA-165

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

有

150 MHz

+ 70 C

3.6 V

0 C

36

Tray

GS816118DGD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

170 mA, 180 mA

7.5 ns

1 M x 18

SRAM

SRAM

62 In Stock

-

8 Weeks

BGA-209

YES

209

209

2.7, 3.6 V

有

200 MHz

+ 70 C

3.6 V

0 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LBGA, BGA209,11X19,40

GRID ARRAY, LOW PROFILE

3

512000

PLASTIC/EPOXY

BGA209,11X19,40

未说明

7.5 ns

70 °C

有

GS832272GC-200

200 MHz

524288 words

2.5 V

LBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

1.45

BGA

Commercial grade

2.5, 3.3 V

2.3, 3 V

Synchronous

72 Bit

0 to 70 °C

Tray

GS832272GC

e1

有

3A991.B.2.B

SCD/DCD Pipeline/Flow Through

锡银铜

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

1 mm

compliant

R-PBGA-B209

不合格

2.5/3.3 V

COMMERCIAL

36 Mbit

SYNCHRONOUS

235 mA, 320 mA

7.5@Flow-Through/3@P

512 k x 72

3-STATE

1.7 mm

72

SRAM

0.06 A

36

Commercial

PARALLEL

COMMON

缓存SRAM

2.38 V

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

10 Weeks

BGA-119

YES

119

119

Details

SDR

BGA,

网格排列

1000000

PLASTIC/EPOXY

-40 °C

未说明

5.5 ns

85 °C

有

GS8162Z18DGB-250I

1048576 words

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.26

BGA

有

250 MHz

+ 85 C

3.6 V

- 40 C

21

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Tray

GS8162Z18DGB

3A991.B.2.B

NBT Pipeline/Flow Through

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

18 Mbit

SYNCHRONOUS

230 mA, 250 mA

5.5 ns

1 M x 18

1.99 mm

18

SRAM

18874368 bit

PARALLEL

ZBT SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

uBGA-144

YES

144

144

85 °C

有

GS4576C36GL-25I

16777216 words

1.8 V

TFBGA

RECTANGULAR

生命周期结束

GSI TECHNOLOGY

5.09

BGA

Details

SMD/SMT

400 MHz

1.7 V

- 40 C

+ 95 C

有

18

0.423288 oz

1.9 V

TFBGA,

GRID ARRAY, THIN PROFILE, FINE PITCH

16000000

PLASTIC/EPOXY

-40 °C

未说明

Tray

3A991.B.2.B

SDRAM - DDR

AUTO/SELF REFRESH

8542.32.00.32

CMOS

BOTTOM

BALL

未说明

1

0.8 mm

compliant

R-PBGA-B144

不合格

INDUSTRIAL

576 Mbit

1

SYNCHRONOUS

570 mA

20 ns

36 bit

16 M x 36

1.2 mm

36

603979776 bit

DDR DRAM

1.9 V

1.7 V

多库页面突发

YES

18.5 mm

11 mm

N/A

-

uBGA-144

YES

144

144

85 °C

有

GS4576C18GL-25I

33554432 words

1.8 V

TFBGA

RECTANGULAR

生命周期结束

GSI TECHNOLOGY

5.09

BGA

Details

SMD/SMT

400 MHz

1.7 V

- 40 C

+ 95 C

有

18

0.423288 oz

1.9 V

TFBGA,

GRID ARRAY, THIN PROFILE, FINE PITCH

32000000

PLASTIC/EPOXY

-40 °C

未说明

Tray

3A991.B.2.B

SDRAM - DDR

AUTO/SELF REFRESH

8542.32.00.32

CMOS

BOTTOM

BALL

未说明

1

0.8 mm

compliant

R-PBGA-B144

不合格

INDUSTRIAL

576 Mbit

1

SYNCHRONOUS

500 mA

20 ns

18 bit

32 M x 18

1.2 mm

18

603979776 bit

DDR DRAM

1.9 V

1.7 V

多库页面突发

YES

18.5 mm

11 mm

N/A

-

YES

100

100

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

1000000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

7.5 ns

70 °C

有

GS816018BGT-150

150 MHz

1048576 words

2.5 V

LQFP

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.39

QFP

e3

有

3A991.B.2.B

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

SRAMs

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

COMMERCIAL

SYNCHRONOUS

0.185 mA

1MX18

3-STATE

1.6 mm

18

0.04 A

18874368 bit

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

20 mm

14 mm

90 In Stock

-

6 Weeks

表面贴装

TSOP-44

YES

44

44

105 mA

16 Bit

3.6 V

表面贴装

Compliant

有

-

+ 70 C

3.6 V

0.016882 oz

0 C

135

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SDR

TSOP2, TSOP44,.46,32

SMALL OUTLINE, THIN PROFILE

3

256000

PLASTIC/EPOXY

TSOP44,.46,32

未说明

10 ns

70 °C

有

GS74116AGP-10

3.3 V

TSOP2

RECTANGULAR

活跃

GSI TECHNOLOGY

1.36

TSOP2

Commercial grade

TSOP-II

3.3000 V

3 V

Asynchronous

256 kWords

0 to 70 °C

GS74116AGP

e3

有

3A991.B.2.B

Asynchronous

Matte Tin (Sn)

70 °C

0 °C

8542.32.00.41

Memory & Data Storage

CMOS

3.3 V

DUAL

鸥翼

260

1

0.8 mm

compliant

R-PDSO-G44

不合格

3.3 V

COMMERCIAL

4 Mbit

1

ASYNCHRONOUS

105 mA

10 ns

256 k x 16

3-STATE

1.2 mm

16

18 Bit

SRAM

4 Mbit

0.01 A

4194304 bit

Commercial

PARALLEL

COMMON

Asynchronous

16 b

标准SRAM

3 V

3.6 V

3 V

SRAM

18.41 mm

10.16 mm

无

N/A

-

BGA-165

165

1.8000 V

1.7 V

Synchronous

36 Bit

1.9 V

有

500 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

Industrial grade

-40 to 100 °C

Tray

GS81302TT38GE

SigmaDDR-II+

Memory & Data Storage

144 Mbit

1.31 A

0.45

4 M x 36

SRAM

144

Industrial

SRAM

N/A

-

12 Weeks

BGA-165

YES

165

165

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

LBGA,

GRID ARRAY, LOW PROFILE

8000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS81302TT19E-400I

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.06

BGA

Industrial grade

400 MHz

FBGA

DDR

-40 to 100 °C

Tray

GS81302TT19E

无

3A991.B.2.B

SigmaDDR-II+ B2

PIPELINED ARCHITECTURE, LATE WRITE

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

INDUSTRIAL

144 Mbit

1

SYNCHRONOUS

905 mA

Pipelined

8 M x 18

1.5 mm

18

22 Bit

SRAM

144 Mbit

150994944 bit

Industrial

PARALLEL

DDR SRAM

1.9 V

1.7 V

SRAM

17 mm

15 mm

N/A

-

TQFP-100

YES

100

LQFP,

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

-40 °C

未说明

7 ns

85 °C

有

GS84018CGT-166I

262144 words

3.3 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.66

Details

166 MHz

Parallel

2.3 V

- 40 C

+ 85 C

SMD/SMT

SDR

有

72

SyncBurst

3.6 V

Tray

GS84018CGT

3A991.B.2.B

Pipeline/Flow Through

Pure Matte Tin (Sn)

FLOW-THROUGH OR PIPELINED ARCHITECTURE

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

INDUSTRIAL

4 Mbit

SYNCHRONOUS

145 mA, 170 mA

6.5 ns

256 k x 18

1.6 mm

18

4718592 bit

PARALLEL

缓存SRAM

3.6 V

3 V

20 mm

14 mm

N/A

-

BGA-119

YES

119

70 °C

无

GS84036CB-166

131072 words

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

5.73

166 MHz

Parallel

2.3 V

0 C

+ 70 C

SMD/SMT

SDR

有

84

SyncBurst

3.6 V

BGA,

网格排列

128000

PLASTIC/EPOXY

未说明

Tray

GS84036CB

3A991.B.2.B

Pipeline/Flow Through

IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

COMMERCIAL

4 Mbit

SYNCHRONOUS

135 mA, 160 mA

7 ns

128 k x 36

1.99 mm

36

4718592 bit

PARALLEL

缓存SRAM

2.7 V

2.3 V

22 mm

14 mm

N/A

-

BGA-165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

N

DDR

有

167 MHz

+ 70 C

1.9 V

0 C

18

Tray

GS8182S08BD

SigmaSIO DDR-II

Memory & Data Storage

18 Mbit

315 mA

2 M x 8

SRAM

SRAM

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SyncBurst

SDR

有

250 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Tray

GS816218DD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

230 mA, 250 mA

5.5 ns

1 M x 18

SRAM

SRAM

N/A

-

BGA-165

200 MHz

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

18 Mbit

365 mA

2 M x 8

N/A

-

BGA-165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II

Details

QDR-II

有

200 MHz

+ 70 C

1.9 V

0 C

15

Tray

GS8672D18BGE

SigmaQuad-II

Memory & Data Storage

72 Mbit

850 mA

4 M x 18

SRAM

72

SRAM

N/A

-

BGA-165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

QDR-II

有

500 MHz

+ 85 C

1.9 V

- 40 C

15

Tray

GS8672D20BGE

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

1.63 A

4 M x 18

SRAM

72

SRAM

N/A

-

BGA-165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO-II

Details

DDR

有

400 MHz

+ 70 C

1.9 V

0 C

15

Tray

GS8342S09BGD

SigmaSIO DDR-II

Memory & Data Storage

36 Mbit

705 mA

4 M x 9

SRAM

36

SRAM

N/A

-

BGA-165

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

Details

DDR-II

有

633 MHz

+ 70 C

1.9 V

0 C

15

Tray

GS8672T20BGE

SigmaDDR-II+ B2

Memory & Data Storage

72 Mbit

1.5 A

4 M x 18

SRAM

72

SRAM

N/A

-

BGA-165

SyncBurst

SDR

有

200 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

GSI技术

GSI技术

Tray

GS8161E32DD

DCD Pipeline/Flow Through

Memory & Data Storage

18 Mbit

230 mA

6.5 ns

512 k x 32

SRAM

SRAM

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaQuad-II

DDR

有

167 MHz

+ 85 C

1.9 V

- 40 C

18

1.7 V

SMD/SMT

Tray

GS8182D36BD

SigmaQuad-II

Memory & Data Storage

18 Mbit

390 mA

512 k x 36

SRAM

SRAM

N/A

-

BGA-165

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

有

150 MHz

+ 85 C

3.6 V

- 40 C

36

Tray

GS816236DGD

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

200 mA, 210 mA

7.5 ns

512 k x 36

SRAM

SRAM

N/A

-

BGA-119

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

有

150 MHz

+ 85 C

3.6 V

- 40 C

21

Tray

GS816236DGB

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

200 mA, 210 mA

7.5 ns

512 k x 36

SRAM

SRAM