N/A

-

TQFP-100

Details

200 MHz

Parallel

2.3 V

- 40 C

+ 100 C

SMD/SMT

SDR

有

15

SyncBurst

3.6 V

Tray

GS8128036GT

Pipeline/Flow Through

144 Mbit

350 mA, 420 mA

6.5 ns

4 M x 36

N/A

-

BGA-165

+ 85 C

1.9 V

- 40 C

1.7 V

SMD/SMT

Parallel

400 MHz

GS81302D06GE

144 Mbit

1.065 A

16 M x 8

N/A

-

BGA-165

SigmaQuad-II+

QDR-II

有

450 MHz

+ 125 C

1.9 V

- 55 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

Tray

GS81302DT20E

SigmaQuad-II+

Memory & Data Storage

144 Mbit

8 M x 18

SRAM

144

SRAM

N/A

-

BGA-165

Details

550 MHz

Parallel

1.7 V

- 40 C

+ 85 C

SMD/SMT

DDR-II

有

10

SigmaDDR-II+

1.9 V

Tray

GS82582T38GE

SigmaDDR-II+

288 Mbit

1.07 A

8 M x 36

N/A

-

BGA-165

Details

450 MHz

Parallel

1.7 V

- 40 C

+ 100 C

SMD/SMT

DDR

有

10

SigmaQuad-II+

1.9 V

Tray

GS82582D20GE

SigmaQuad-II+

288 Mbit

1 A

16 M x 18

N/A

-

BGA-165

Details

550 MHz

Parallel

1.7 V

0 C

+ 70 C

SMD/SMT

DDR

有

15

SigmaQuad-II+

1.9 V

Tray

GS8662DT11BGD

SigmaQuad-II+

72 Mbit

8 M x 9

N/A

-

N/A

-

BGA-165

GSI技术

GSI技术

SigmaSIO DDR-II

Details

DDR

有

400 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

Tray

GS8662S09BGD

SigmaSIO DDR-II

Memory & Data Storage

72 Mbit

745 mA

8 M x 9

SRAM

72

SRAM

N/A

-

12 Weeks

BGA-165

333 MHz

Parallel

2.3 V

- 40 C

+ 100 C

SMD/SMT

SDR

有

10

NBT SRAM

3.6 V

,

未说明

有

GS82564Z18GD-333I

活跃

GSI TECHNOLOGY

5.69

Details

-40 to 100 °C

Tray

GS82564Z18GD

NBT Pipeline/Flow Through

未说明

compliant

288 Mbit

530 mA, 670 mA

4.5 ns

16 M x 18

ZBT SRAM

N/A

-

BGA-165

+ 70 C

1.9 V

0 C

1.7 V

SMD/SMT

Parallel

333 MHz

GS8662S36BGD

72 Mbit

810 mA

2 M x 36

72

N/A

-

BGA-165

SigmaDDR-II+

DDR

有

550 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

Tray

GS8342TT20BD

SigmaQuad-II+

Memory & Data Storage

36 Mbit

810 mA

2 M x 18

SRAM

36

SRAM

N/A

-

BGA-165

Parallel

GSI技术

GSI技术

SigmaQuad-II+

Details

DDR

Industrial grade

450 MHz

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

8 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

15

1.7 V

SMD/SMT

-40 to 100 °C

Tray

GS8662D07BGD

SigmaQuad-II+ B4

Memory & Data Storage

72 Mbit

2

830 mA

Pipelined

8 M x 8

21 Bit

SRAM

72 Mbit

Industrial

SRAM

N/A

-

N/A

-

N/A

-

N/A

-

8 Weeks

BGA-119

YES

119

119

2.5, 3.3 V

2.3, 3 V

Synchronous

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

有

200 MHz

+ 85 C

3.6 V

- 40 C

42

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

N

SDR

BGA,

网格排列

256000

PLASTIC/EPOXY

-40 °C

未说明

2.7 ns

85 °C

无

GS88237CB-200I

2.5 V

BGA

RECTANGULAR

活跃

GSI TECHNOLOGY

1.68

BGA

Industrial grade

200 MHz

FBGA

SDR

-40 to 85 °C

Tray

GS88237CB

e0

无

3A991.B.2.B

SCD/DCD Pipeline

Tin/Lead (Sn/Pb)

PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1.27 mm

compliant

R-PBGA-B119

不合格

INDUSTRIAL

9 Mbit

2

SYNCHRONOUS

190 mA

2.7 ns

Pipelined

256 k x 36

1.77 mm

36

18 Bit

SRAM

9 Mbit

9437184 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

22 mm

14 mm

N/A

-

6 Weeks

BGA-48

YES

48

48

16 Bit

3.6 V

表面贴装

有

-

+ 70 C

3.6 V

0 C

135

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

Details

SDR

TFBGA, BGA48,6X8,30

GRID ARRAY, THIN PROFILE, FINE PITCH

3

256000

PLASTIC/EPOXY

BGA48,6X8,30

未说明

12 ns

70 °C

有

GS74116AGX-12

3.3 V

TFBGA

RECTANGULAR

活跃

GSI TECHNOLOGY

4.66

BGA

Commercial grade

FBGA

3.3000 V

3 V

Asynchronous

256 kWords

0 to 70 °C

GS74116AGX

e1

有

3A991.B.2.B

Asynchronous

Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

260

1

0.75 mm

compliant

R-PBGA-B48

不合格

3.3 V

COMMERCIAL

4 Mbit

1

ASYNCHRONOUS

90 mA

12 ns

256 k x 16

3-STATE

1.2 mm

16

18 Bit

SRAM

4 Mbit

0.01 A

4194304 bit

Commercial

PARALLEL

COMMON

标准SRAM

3 V

3.6 V

3 V

SRAM

10 mm

6 mm

N/A

-

TQFP-100

100

181.8@Flow-Through/250@Pipelined MHz

2.5, 3.3 V

2.3, 3 V

32 Bit

2.7, 3.6 V

有

250 MHz

+ 85 C

3.6 V

- 40 C

36

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

-40 to 100 °C

Tray

GS816032DGT

Pipeline/Flow Through

Memory & Data Storage

18 Mbit

250 mA, 270 mA

5.5@Flow-Through/2.5

512 k x 32

SRAM

18

Industrial

SRAM

N/A

-

8 Weeks

TQFP-100

YES

100

100

256 kWords

36 Bit

2.7, 3.6 V

表面贴装

250 MHz

+ 85 C

3.6 V

- 40 C

2.3 V

SMD/SMT

Parallel

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

256000

PLASTIC/EPOXY

QFP100,.63X.87

-40 °C

未说明

2.3 ns

85 °C

有

GS88037CGT-250I

250 MHz

2.5 V

LQFP

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.24

QFP

Industrial grade

250 MHz

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

-40 to 85 °C

GS88037CGT

e3

有

3A991.B.2.B

纯哑光锡

PIPELINED ARCHITECTURE, IT ALSO OPERATES WITH 3 V TO 3.6 V SUPPLY

8542.32.00.41

SRAMs

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

2.5/3.3 V

INDUSTRIAL

9 Mbit

1

SYNCHRONOUS

215 mA

2.3 ns

Pipelined

256 k x 36

3-STATE

1.6 mm

36

18 Bit

9 Mbit

0.045 A

9437184 bit

Industrial

PARALLEL

COMMON

缓存SRAM

2.3 V

2.7 V

2.3 V

20 mm

14 mm

N/A

-

12 Weeks

BGA-260

YES

260

260

HBGA,

GRID ARRAY, HEAT SINK/SLUG

2000000

PLASTIC/EPOXY

85 °C

有

GS8673ED36BGK-675

1.35 V

HBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.44

Commercial grade

675/450 MHz

BGA

QDR

1.3500 V

Synchronous

2 MWords

36 Bit

表面贴装

675 MHz

+ 85 C

1.4 V

0 C

1.3 V

SMD/SMT

Parallel

0 to 70 °C

GS8673ED36BGK

3A991.B.2.B

8542.32.00.41

CMOS

BOTTOM

BALL

1

1 mm

compliant

R-PBGA-B260

OTHER

72 Mbit

SYNCHRONOUS

3.17 A

400 ps

Pipelined

2 M x 36

2.3 mm

36

19 Bit

72 Mbit

75497472 bit

Commercial

PARALLEL

DDR SRAM

1.4 V

1.3 V

22 mm

14 mm

N/A

-

8 Weeks

TQFP-100

YES

100

100

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

4 MWords

18 Bit

2.7, 3.6 V

表面贴装

有

167 MHz

+ 85 C

3.6 V

- 40 C

18

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP,

FLATPACK, LOW PROFILE

3

4000000

PLASTIC/EPOXY

-40 °C

未说明

8 ns

85 °C

有

GS864018GT-167I

2.5 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.37

QFP

Industrial grade

125@Flow-Through/167@Pipelined MHz

TQFP

-40 to 85 °C

Tray

GS864018GT

e3

有

3A991.B.2.B

Pipeline/Flow Through

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

R-PQFP-G100

不合格

INDUSTRIAL

72 Mbit

2

SYNCHRONOUS

215 mA, 260 mA

8 ns

Flow-Through/Pipelined

4 M x 18

1.6 mm

18

22 Bit

SRAM

72 Mbit

75497472 bit

Industrial

PARALLEL

缓存SRAM

2.7 V

2.3 V

SRAM

20 mm

14 mm

N/A

-

YES

165

165

Obsolete

GSI技术

RECTANGULAR

LBGA

1.8 V

2097152 words

GS8662Q36E-250

无

70 °C

0.45 ns

未说明

PLASTIC/EPOXY

2000000

3

GRID ARRAY, LOW PROFILE

15 X 17 MM, 1 MM PITCH, FPBGA-165

BGA

5.71

GSI TECHNOLOGY

无

3A991.B.2.B

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

SYNCHRONOUS

2MX36

1.5 mm

36

75497472 bit

PARALLEL

标准SRAM

1.9 V

1.7 V

17 mm

15 mm

N/A

-

YES

165

165

2000000

PLASTIC/EPOXY

未说明

0.45 ns

70 °C

无

GS8662Q36E-200

2097152 words

1.8 V

LBGA

RECTANGULAR

GSI技术

Obsolete

GSI TECHNOLOGY

5.74

BGA

15 X 17 MM, 1 MM PITCH, FPBGA-165

GRID ARRAY, LOW PROFILE

3

无

3A991.B.2.B

流水线结构

8542.32.00.41

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

R-PBGA-B165

不合格

COMMERCIAL

SYNCHRONOUS

2MX36

1.5 mm

36

75497472 bit

PARALLEL

标准SRAM

1.9 V

1.7 V

17 mm

15 mm

N/A

-

TQFP-100

Details

200 MHz

Parallel

2.3 V

- 40 C

+ 85 C

SMD/SMT

SDR

有

72

SyncBurst

3.6 V

Tray

GS84032CGT

Pipeline/Flow Through

4 Mbit

160 mA, 190 mA

6.5 ns

128 k x 32

N/A

-

BGA-165

Details

200 MHz

Parallel

2.3 V

- 40 C

+ 100 C

SMD/SMT

SDR

有

10

SyncBurst

3.6 V

Tray

GS8128236GD

SCD/DCD Pipeline/Flow Through

144 Mbit

350 mA, 420 mA

6.5 ns

4 M x 36