品牌是'IDT' (6623)

对比

图片

产品型号

品牌

数据表

库存

价格(含增值税)

数量

Rohs

工厂交货时间

底架

包装/外壳

表面安装

引脚数

质量

Current - Supply (Nom)

包装

已出版

JESD-609代码

无铅代码

零件状态

湿度敏感性等级(MSL)

终止次数

ECCN 代码

端子表面处理

最高工作温度

最小工作温度

附加功能

HTS代码

电压 - 供电

端子位置

终端形式

峰值回流焊温度(摄氏度)

功能数量

端子间距

Reach合规守则

频率

时间@峰值回流温度-最大值(s)

JESD-30代码

最大电流源

资历状况

电源

温度等级

界面

内存大小

端口的数量

操作模式

时钟频率

电源电流-最大值

访问时间

组织结构

输出特性

内存宽度

地址总线宽度

密度

待机电流-最大值

记忆密度

访问时间(最大)

I/O类型

同步/异步

字长

待机电压-最小值

电压 - 供电 (最大值)

电压 - 供电 (最小值)

输出启用

高度

座位高度(最大)

长度

宽度

器件厚度

辐射硬化

RoHS状态

无铅

709289L7PF8
709289L7PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

TQFP

YES

100

RAM, SDR, SRAM

2009

e0

no

活跃

3 (168 Hours)

100

Tin/Lead (Sn85Pb15)

70°C

0°C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

5V

QUAD

鸥翼

240

1

0.5mm

20

5V

COMMERCIAL

Parallel

128kB

2

83MHz

0.465mA

7 ns

64KX16

3-STATE

32b

1 Mb

0.003A

COMMON

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

7134SA25P
7134SA25P
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

通孔

PDIP

48

280mA

RAM, SDR, SRAM

Bulk

2013

e0

no

Discontinued

1 (Unlimited)

48

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

AUTOMATIC POWER-DOWN

5V

DUAL

245

1

5V

COMMERCIAL

Parallel

4kB

2

25 ns

4KX8

3-STATE

24b

32 kb

0.015A

COMMON

Asynchronous

8b

5.5V

4.5V

5.08mm

61.7mm

15.24mm

3.8mm

符合RoHS标准

含铅

IDT71T75602S100PF
IDT71T75602S100PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

表面贴装

TQFP

100

175mA

RAM, SRAM

2015

e0

3 (168 Hours)

100

70°C

0°C

流水线结构

2.5V

QUAD

鸥翼

240

1

0.65mm

not_compliant

100MHz

20

不合格

COMMERCIAL

Parallel

1

5 ns

3-STATE

36

19b

18 Mb

0.04A

COMMON

Synchronous

36b

2.38V

2.625V

2.375V

20mm

Non-RoHS Compliant

71421SA55JI8
71421SA55JI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

52

190mA

RAM, SDR, SRAM

2008

e0

no

活跃

3 (168 Hours)

52

EAR99

Tin/Lead (Sn85Pb15)

85°C

-40°C

INTERRUPT FLAG; AUTOMATIC POWER-DOWN

5V

QUAD

J BEND

225

1

5V

INDUSTRIAL

Parallel

2kB

2

55 ns

3-STATE

22b

16 kb

0.01A

COMMON

Asynchronous

8b

5.5V

4.5V

19mm

19mm

3.63mm

符合RoHS标准

含铅

7143SA35FB
7143SA35FB
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

10 Weeks

68

RAM, SRAM

2013

活跃

125°C

-55°C

5V

Parallel

2

22b

32 kb

24mm

24mm

2mm

符合RoHS标准

含铅

70V25L55J
70V25L55J
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

84

155mA

RAM, SRAM

2004

e0

no

活跃

1 (Unlimited)

84

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

3.3V

QUAD

J BEND

225

1

COMMERCIAL

Parallel

2

55 ns

8KX16

3-STATE

26b

128 kb

COMMON

Asynchronous

16b

3V

3.6V

3V

29.21mm

29.21mm

3.63mm

符合RoHS标准

含铅

71321LA25JI
71321LA25JI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

52

220mA

RAM, SDR, SRAM

2005

e0

no

活跃

3 (168 Hours)

52

EAR99

Tin/Lead (Sn85Pb15)

85°C

-40°C

5V

QUAD

J BEND

225

1

5V

INDUSTRIAL

Parallel

2kB

2

25 ns

3-STATE

22b

16 kb

0.004A

COMMON

Asynchronous

8b

2V

5.5V

4.5V

19mm

19mm

3.63mm

符合RoHS标准

含铅

IDT71P72604S167BQ
IDT71P72604S167BQ
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

表面贴装

165

850mA

QDR, RAM, SRAM

2006

e0

3 (168 Hours)

165

Tin/Lead (Sn63Pb37)

70°C

0°C

1.8V

BOTTOM

BALL

225

1

1mm

not_compliant

167MHz

20

不合格

COMMERCIAL

Parallel

2

500 ps

3-STATE

36

18b

18 Mb

SEPARATE

Synchronous

36b

1.9V

1.7V

15mm

Non-RoHS Compliant

IDT71V3558XS133PF8
IDT71V3558XS133PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

RAM, SRAM

Tape & Reel (TR)

2007

e0

3 (168 Hours)

100

Tin/Lead (Sn85Pb15)

70°C

0°C

3.3V

QUAD

鸥翼

225

0.635mm

not_compliant

133MHz

未说明

R-PQFP-G100

不合格

3.3V

COMMERCIAL

Parallel

SYNCHRONOUS

0.3mA

256KX18

3-STATE

18

0.04A

4718592 bit

4.2 ns

COMMON

3.14V

Non-RoHS Compliant

IDT71256SA20PZ8
IDT71256SA20PZ8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

TSSOP

YES

28

RAM, SRAM - Asynchronous

Tape & Reel (TR)

2009

e0

no

3 (168 Hours)

28

EAR99

锡铅

70°C

0°C

8542.32.00.41

5V

DUAL

鸥翼

240

1

0.55mm

20

R-PDSO-G28

不合格

COMMERCIAL

Parallel

1

32KX8

3-STATE

8

262144 bit

20 ns

5.5V

4.5V

YES

1.2mm

11.8mm

8mm

Non-RoHS Compliant

IDT71V424S12YI
IDT71V424S12YI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

36

RAM, SRAM - Asynchronous

2009

e0

3 (168 Hours)

36

3A991.B.2.A

Tin/Lead (Sn85Pb15)

85°C

-40°C

8542.32.00.41

3.3V

DUAL

J BEND

225

1

1.27mm

not_compliant

30

不合格

3.3V

INDUSTRIAL

Parallel

0.17mA

512KX8

3-STATE

8

0.02A

4194304 bit

12 ns

COMMON

3V

3.6V

3V

3.683mm

23.495mm

10.16mm

Non-RoHS Compliant

70T651S10BFGI
70T651S10BFGI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

208

445mA

RAM, SDR, SRAM

Bulk

2009

e1

yes

活跃

3 (168 Hours)

208

Tin/Silver/Copper (Sn/Ag/Cu)

85°C

-40°C

2.5V

BOTTOM

BALL

260

1

0.8mm

30

INDUSTRIAL

Parallel

1.1MB

2

10 ns

3-STATE

36b

9 Mb

COMMON

Asynchronous

36b

2.6V

2.4V

15mm

15mm

1.4mm

符合RoHS标准

无铅

IDT71P72804S200BQ
IDT71P72804S200BQ
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

165

QDR, RAM, SRAM

2006

e0

3 (168 Hours)

165

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

8542.32.00.41

1.8V

BOTTOM

BALL

225

1

1mm

not_compliant

200MHz

20

不合格

1.5/1.81.8V

COMMERCIAL

Parallel

SYNCHRONOUS

1MX18

3-STATE

18

18874368 bit

0.45 ns

SEPARATE

1.7V

1.9V

1.7V

1.2mm

15mm

13mm

Non-RoHS Compliant

IDT71V35761S200BQI
IDT71V35761S200BQI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

165

RAM, SRAM

2009

e0

3 (168 Hours)

165

3A991.B.2.A

Tin/Lead (Sn63Pb37)

85°C

-40°C

8542.32.00.41

3.3V

BOTTOM

BALL

225

1

1mm

not_compliant

200MHz

20

不合格

INDUSTRIAL

Parallel

SYNCHRONOUS

128KX36

36

4718592 bit

3.1 ns

3.465V

3.135V

1.2mm

15mm

13mm

Non-RoHS Compliant

IDT71016S15PH8
IDT71016S15PH8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

TSOP

YES

44

RAM, SRAM - Asynchronous

Tape & Reel (TR)

2010

e0

no

3 (168 Hours)

44

3A991.B.2.B

Tin/Lead (Sn85Pb15)

70°C

0°C

8542.32.00.41

5V

DUAL

鸥翼

225

1

0.8mm

20

R-PDSO-G44

不合格

5V

COMMERCIAL

Parallel

1

0.18mA

64KX16

3-STATE

16

0.01A

1048576 bit

15 ns

COMMON

4.5V

5.5V

4.5V

YES

1.2mm

18.41mm

10.16mm

符合RoHS标准

IDT71V124SA15PH8
IDT71V124SA15PH8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

SOIC

YES

32

RAM, SRAM - Asynchronous

Tape & Reel (TR)

2007

e0

no

3 (168 Hours)

32

3A991.B.2.B

Tin/Lead (Sn85Pb15)

70°C

0°C

8542.32.00.41

3.3V

DUAL

鸥翼

225

1

1.27mm

not_compliant

30

R-PDSO-G32

不合格

3.3V

COMMERCIAL

Parallel

0.1mA

128KX8

3-STATE

8

0.01A

1048576 bit

15 ns

COMMON

3V

3.6V

3.15V

1.2mm

20.95mm

10.16mm

Non-RoHS Compliant

IDT71V416S10PHI8
IDT71V416S10PHI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

TSOP

YES

44

RAM, SRAM - Asynchronous

Tape & Reel (TR)

2007

e0

no

3 (168 Hours)

44

3A991.B.2.A

锡铅

85°C

-40°C

8542.32.00.41

3.3V

DUAL

鸥翼

225

1

0.8mm

20

R-PDSO-G44

不合格

INDUSTRIAL

Parallel

256KX16

16

4194304 bit

10 ns

3.6V

3V

1.2mm

18.41mm

10.16mm

Non-RoHS Compliant

71V65903S80PFG8
71V65903S80PFG8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

8 Weeks

表面贴装

TQFP

100

657.000198mg

250mA

RAM, SDR, SRAM

2005

e3

yes

活跃

3 (168 Hours)

100

Matte Tin (Sn) - annealed

70°C

0°C

FLOW-THROUGH

3.3V

QUAD

鸥翼

260

1

95MHz

30

250mA

COMMERCIAL

Parallel

1.1MB

1

8 ns

19b

9 Mb

Synchronous

18b

3.465V

3.135V

1.4mm

20mm

14mm

1.4mm

符合RoHS标准

无铅

IDT71P79804S267BQ
IDT71P79804S267BQ
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

FBGA

YES

165

DDR, RAM, SRAM

2008

e0

3 (168 Hours)

165

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

8542.32.00.41

1.8V

BOTTOM

BALL

225

1

1mm

267MHz

20

不合格

1.5/1.81.8V

COMMERCIAL

Parallel

SYNCHRONOUS

0.95mA

1MX18

3-STATE

18

0.42A

18874368 bit

0.45 ns

SEPARATE

1.7V

1.9V

1.7V

1.2mm

15mm

13mm

符合RoHS标准

IDT71V3577SA85BQI
IDT71V3577SA85BQI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

165

RAM, SRAM

2005

e0

3 (168 Hours)

165

3A991.B.2.A

Tin/Lead (Sn63Pb37)

85°C

-40°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

3.3V

BOTTOM

BALL

225

1

1mm

not_compliant

20

不合格

3.3V

INDUSTRIAL

Parallel

SYNCHRONOUS

87MHz

0.19mA

128KX36

3-STATE

36

0.035A

4718592 bit

8.5 ns

COMMON

3.14V

3.465V

3.135V

1.2mm

15mm

13mm

Non-RoHS Compliant

71V416S15BEG
71V416S15BEG
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

12 Weeks

表面贴装

TFBGA

48

170mA

RAM, SDR, SRAM - Asynchronous

2012

e1

yes

活跃

3 (168 Hours)

48

Tin/Silver/Copper (Sn/Ag/Cu)

70°C

0°C

3.3V

BOTTOM

BALL

260

1

0.75mm

INDUSTRIAL

Parallel

512kB

1

15 ns

3-STATE

18b

4 Mb

0.02A

COMMON

Asynchronous

16b

3V

3.6V

3V

9mm

9mm

1.2mm

符合RoHS标准

无铅

IDT71V65803S150PFI8
IDT71V65803S150PFI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

Tape & Reel (TR)

2015

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

85°C

-40°C

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

150MHz

20

R-PQFP-G100

不合格

3.3V

INDUSTRIAL

Parallel

SYNCHRONOUS

0.345mA

512KX18

3-STATE

18

0.06A

9437184 bit

3.8 ns

COMMON

3.14V

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

7026S20G
7026S20G
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

通孔

84

315mA

RAM, SDR, SRAM

Bulk

2009

e0

no

活跃

1 (Unlimited)

84

EAR99

Tin/Lead (Sn/Pb)

70°C

0°C

5V

PERPENDICULAR

PIN/PEG

240

1

5V

COMMERCIAL

Parallel

32kB

2

20 ns

16KX16

3-STATE

14b

256 kb

0.015A

COMMON

Asynchronous

16b

5.5V

4.5V

27.94mm

27.94mm

3.68mm

符合RoHS标准

含铅

IDT71V25761YSA183BG8
IDT71V25761YSA183BG8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA

YES

119

RAM, SRAM

Tape & Reel (TR)

2009

e0

3 (168 Hours)

119

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

流水线结构

8542.32.00.41

3.3V

BOTTOM

BALL

1

1.27mm

not_compliant

183MHz

不合格

2.53.3V

COMMERCIAL

Parallel

SYNCHRONOUS

0.34mA

128KX36

3-STATE

36

0.03A

4718592 bit

3.3 ns

COMMON

3.14V

3.465V

3.135V

2.36mm

22mm

14mm

Non-RoHS Compliant

7035S15PF8
7035S15PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

310mA

RAM, SDR, SRAM

2009

e0

no

活跃

3 (168 Hours)

100

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

SEMAPHORE; AUTOMATIC POWER-DOWN

5V

QUAD

鸥翼

240

1

0.5mm

20

5V

COMMERCIAL

Parallel

18kB

2

15 ns

8KX8

3-STATE

13b

144 kb

0.015A

COMMON

Asynchronous

18b

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅