品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间(最大) | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 (最大值) | 电压 - 供电 (最小值) | 输出启用 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | IDT71V67602S150PFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2009 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 150MHz | 20 | R-PQFP-G100 | 不合格 | 2.53.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 0.325mA | 256KX36 | 3-STATE | 36 | 0.05A | 9437184 bit | 3.8 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||
![]() | IDT71124S12YGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 32 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2008 | e3 | 3 (168 Hours) | 32 | 3A991.B.2.B | Matte Tin (Sn) - annealed | 85°C | -40°C | 5V | DUAL | J BEND | 260 | 1 | 1.27mm | 30 | 不合格 | 5V | INDUSTRIAL | Parallel | 0.16mA | 128KX8 | 3-STATE | 8 | 0.01A | 1048576 bit | 12 ns | COMMON | 4.5V | 5.5V | 4.5V | 3.683mm | 20.955mm | 10.16mm | 符合RoHS标准 | |||||||||||||||||||||||||||
![]() | IDT71T016SA15PHI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSOP | YES | 44 | RAM, SRAM - Asynchronous | 2008 | e0 | 3 (168 Hours) | 44 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 8542.32.00.41 | 2.5V | DUAL | 鸥翼 | 225 | 1 | 0.8mm | not_compliant | 20 | R-PDSO-G44 | 不合格 | 2.5V | INDUSTRIAL | Parallel | 0.13mA | 64KX16 | 3-STATE | 16 | 0.015A | 1048576 bit | 15 ns | COMMON | 2.38V | 2.625V | 2.375V | 1.2mm | 18.41mm | 10.16mm | Non-RoHS Compliant | ||||||||||||||||||||||||
![]() | 70T651S10BC8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 405mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 2.5V | BOTTOM | BALL | 225 | 1 | 1mm | 20 | COMMERCIAL | Parallel | 2 | 10 ns | 3-STATE | 18b | 9 Mb | 0.01A | COMMON | Asynchronous | 36b | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
![]() | IDT71V416VL12BE8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TFBGA | YES | 48 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2005 | e0 | 48 | 3A991.B.2.A | 锡铅 | 70°C | 0°C | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 225 | 1 | 0.75mm | 30 | S-PBGA-B48 | 不合格 | COMMERCIAL | Parallel | 256KX16 | 16 | 4194304 bit | 12 ns | 3.6V | 3V | 1.2mm | 9mm | 9mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||
![]() | 71V65903S85BQ8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 165 | RAM, SRAM | Tape & Reel | 2005 | 活跃 | 70°C | 0°C | 3.3V | Parallel | 1 | 19b | 9 Mb | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT71T016SA20PH | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSOP | YES | 44 | RAM, SRAM - Asynchronous | 2008 | e0 | 3 (168 Hours) | 44 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 2.5V | DUAL | 鸥翼 | 225 | 1 | 0.8mm | not_compliant | 20 | R-PDSO-G44 | 不合格 | 2.5V | COMMERCIAL | Parallel | 0.12mA | 64KX16 | 3-STATE | 16 | 0.015A | 1048576 bit | 20 ns | COMMON | 2.38V | 2.625V | 2.375V | 1.2mm | 18.41mm | 10.16mm | Non-RoHS Compliant | ||||||||||||||||||||||||
![]() | IDT71T016SA15PHI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSOP | YES | 44 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2008 | e0 | 3 (168 Hours) | 44 | 3A991.B.2.B | 锡铅 | 85°C | -40°C | 8542.32.00.41 | 2.5V | DUAL | 鸥翼 | 225 | 1 | 0.8mm | not_compliant | 20 | R-PDSO-G44 | 不合格 | 2.5V | INDUSTRIAL | Parallel | 0.13mA | 64KX16 | 3-STATE | 16 | 0.015A | 1048576 bit | 15 ns | COMMON | 2.38V | 2.625V | 2.375V | 1.2mm | 18.41mm | 10.16mm | Non-RoHS Compliant | |||||||||||||||||||||||
![]() | 70125L25J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | PLCC | YES | 52 | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 2.3kB | 2 | 25 ns | 3-STATE | 22b | 18 kb | 0.015A | COMMON | 2V | 5.5V | 4.5V | 4.57mm | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
![]() | IDT71V65803S100PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2015 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 100MHz | 20 | R-PQFP-G100 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.25mA | 512KX18 | 3-STATE | 18 | 0.04A | 9437184 bit | 5 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||
![]() | 7134SA20J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 280mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 20 ns | 4KX8 | 3-STATE | 24b | 32 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 4.57mm | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
![]() | 71V65803S150BQI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 165 | 345mA | RAM, SRAM | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 165 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 3.3V | BOTTOM | BALL | 225 | 1 | 150MHz | 20 | INDUSTRIAL | Parallel | 1 | 3.8 ns | 3-STATE | 19b | 9 Mb | 0.06A | COMMON | Synchronous | 18b | 3.465V | 3.135V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||
![]() | IDT71V416VL12BE | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TFBGA | YES | 48 | RAM, SRAM - Asynchronous | 2005 | e1 | yes | 3 (168 Hours) | 48 | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 260 | 1 | 0.75mm | 30 | S-PBGA-B48 | 不合格 | 3.3V | COMMERCIAL | Parallel | 0.17mA | 256KX16 | 3-STATE | 16 | 0.01A | 4194304 bit | 12 ns | COMMON | 3V | 3.6V | 3V | 1.2mm | 9mm | 9mm | Non-RoHS Compliant | ||||||||||||||||||||||||
![]() | 709099L9PFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 430mA | RAM, SDR, SRAM | 2009 | 活跃 | 85°C | -40°C | 5V | 66.6MHz | Parallel | 128kB | 2 | 9 ns | 34b | 1 Mb | Synchronous | 8b | 5.5V | 4.5V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||
![]() | IDT71V65703S80PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TQFP | 100 | 250mA | RAM, SRAM | 卷带 | 2009 | e0 | 3 (168 Hours) | 100 | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 95MHz | 20 | 不合格 | COMMERCIAL | Parallel | 1 | 8 ns | 256KX36 | 3-STATE | 36 | 18b | 9 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | Non-RoHS Compliant | |||||||||||||||||||||||||
![]() | IDT71T016SA15PHG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSOP | YES | 44 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2008 | e3 | 3 (168 Hours) | 44 | 3A991.B.2.B | Matte Tin (Sn) - annealed | 70°C | 0°C | 8542.32.00.41 | 2.5V | DUAL | 鸥翼 | 260 | 1 | 0.8mm | unknown | 30 | R-PDSO-G44 | 不合格 | 2.5V | COMMERCIAL | Parallel | 0.13mA | 64KX16 | 3-STATE | 16 | 0.015A | 1048576 bit | 15 ns | COMMON | 2.38V | 2.625V | 2.375V | 1.2mm | 18.41mm | 10.16mm | 符合RoHS标准 | |||||||||||||||||||||||
![]() | IDT71V416S15PH8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSOP | YES | 44 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2007 | e0 | no | 3 (168 Hours) | 44 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | 鸥翼 | 225 | 1 | 0.8mm | 20 | R-PDSO-G44 | 不合格 | 3.3V | COMMERCIAL | Parallel | 1 | 0.17mA | 256KX16 | 3-STATE | 16 | 0.02A | 4194304 bit | 15 ns | COMMON | 3V | 3.6V | 3V | YES | 1.2mm | 18.41mm | 10.16mm | 符合RoHS标准 | |||||||||||||||||||||
![]() | IDT71V65603S133PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2015 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | 133MHz | 20 | R-PQFP-G100 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.3mA | 256KX36 | 3-STATE | 36 | 0.04A | 9437184 bit | 4.2 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | 符合RoHS标准 | |||||||||||||||||||||
![]() | 71V3559S85PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 225mA | 100MHz | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 91MHz | 30 | COMMERCIAL | Parallel | 512kB | 1 | 8.5 ns | 3-STATE | 18b | 4.5 Mb | 0.04A | COMMON | Synchronous | 18b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||
![]() | IDT71T016SA15PHG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSOP | YES | 44 | RAM, SRAM - Asynchronous | 2008 | e3 | 3 (168 Hours) | 44 | 3A991.B.2.B | Matte Tin (Sn) - annealed | 70°C | 0°C | 8542.32.00.41 | 2.5V | DUAL | 鸥翼 | 未说明 | 1 | 0.8mm | unknown | 未说明 | R-PDSO-G44 | 不合格 | 2.5V | COMMERCIAL | Parallel | 0.13mA | 64KX16 | 3-STATE | 16 | 0.015A | 1048576 bit | 15 ns | COMMON | 2.38V | 2.625V | 2.375V | 1.2mm | 18.41mm | 10.16mm | 符合RoHS标准 | ||||||||||||||||||||||||
![]() | 70T659S12BC8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 355mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 2.5V | BOTTOM | BALL | 225 | 1 | 1mm | 20 | COMMERCIAL | Parallel | 2 | 12 ns | 3-STATE | 17b | 4.5 Mb | 0.01A | COMMON | Asynchronous | 36b | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
![]() | IDT71V3578YS133PFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2005 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 133MHz | 20 | R-PQFP-G100 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 0.26mA | 256KX18 | 3-STATE | 18 | 0.035A | 4718592 bit | 4.2 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||
![]() | 7038L15PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 340mA | RAM, SRAM | Tape & Reel | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 5V | QUAD | 鸥翼 | 260 | 1 | 0.5mm | 30 | 5V | COMMERCIAL | Parallel | 2 | 15 ns | 64KX18 | 3-STATE | 16b | 1.1 Mb | 0.003A | COMMON | Asynchronous | 18b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||
![]() | IDT71V3577YS80PFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2006 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 100MHz | 0.21mA | 128KX36 | 3-STATE | 36 | 0.035A | 4718592 bit | 8 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||
![]() | 7034L20PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 240mA | RAM, SDR, SRAM | 2001 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 9kB | 2 | 20 ns | 4KX18 | 3-STATE | 12b | 72 kb | 0.0015A | COMMON | Asynchronous | 18b | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 |
IDT71V67602S150PFI8
Integrated Device Technology (IDT)
分类:Memory
IDT71124S12YGI8
Integrated Device Technology (IDT)
分类:Memory
IDT71T016SA15PHI
Integrated Device Technology (IDT)
分类:Memory
70T651S10BC8
Integrated Device Technology (IDT)
分类:Memory
IDT71V416VL12BE8
Integrated Device Technology (IDT)
分类:Memory
71V65903S85BQ8
Integrated Device Technology (IDT)
分类:Memory
IDT71T016SA20PH
Integrated Device Technology (IDT)
分类:Memory
IDT71T016SA15PHI8
Integrated Device Technology (IDT)
分类:Memory
70125L25J8
Integrated Device Technology (IDT)
分类:Memory
IDT71V65803S100PF8
Integrated Device Technology (IDT)
分类:Memory
7134SA20J8
Integrated Device Technology (IDT)
分类:Memory
71V65803S150BQI
Integrated Device Technology (IDT)
分类:Memory
IDT71V416VL12BE
Integrated Device Technology (IDT)
分类:Memory
709099L9PFI8
Integrated Device Technology (IDT)
分类:Memory
IDT71V65703S80PF8
Integrated Device Technology (IDT)
分类:Memory
IDT71T016SA15PHG8
Integrated Device Technology (IDT)
分类:Memory
IDT71V416S15PH8
Integrated Device Technology (IDT)
分类:Memory
IDT71V65603S133PF8
Integrated Device Technology (IDT)
分类:Memory
71V3559S85PFG8
Integrated Device Technology (IDT)
分类:Memory
IDT71T016SA15PHG
Integrated Device Technology (IDT)
分类:Memory
70T659S12BC8
Integrated Device Technology (IDT)
分类:Memory
IDT71V3578YS133PFI8
Integrated Device Technology (IDT)
分类:Memory
7038L15PFG8
Integrated Device Technology (IDT)
分类:Memory
IDT71V3577YS80PFI8
Integrated Device Technology (IDT)
分类:Memory
7034L20PF8
Integrated Device Technology (IDT)
分类:Memory
