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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | IDT71V35761S200PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2009 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 200MHz | 20 | R-PQFP-G100 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.36mA | 128KX36 | 3-STATE | 36 | 0.03A | 4718592 bit | 3.1 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||
 | 70V3569S5BCI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 415mA | RAM, SRAM | Tape & Reel | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | 100MHz | INDUSTRIAL | Parallel | 2 | 5 ns | 16KX36 | 3-STATE | 28b | 576 kb | 0.03A | COMMON | Synchronous | 36b | 3.45V | 3.15V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
 | IDT71V3577S85PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2005 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 87MHz | 0.18mA | 128KX36 | 3-STATE | 36 | 0.03A | 4718592 bit | 8.5 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||
 | 71V2556S150PFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | TQFP | YES | 100 | 150MHz | RAM, SDR, SRAM | 2011 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 85°C | -40°C | 流水线结构 | 3.3V | QUAD | FLAT | 260 | 1 | 0.65mm | 150MHz | 30 | INDUSTRIAL | Parallel | 512kB | 1 | 0.335mA | 3.8 ns | 3-STATE | 17b | 4.5 Mb | 0.045A | COMMON | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||
 | IDT7164S35YG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 28 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2009 | e3 | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | 8542.32.00.41 | 5V | DUAL | J BEND | 260 | 1 | 1.27mm | unknown | 40 | 不合格 | 5V | INDUSTRIAL | Parallel | 0.09mA | 8KX8 | 3-STATE | 8 | 0.015A | 65536 bit | 35 ns | COMMON | 4.5V | 5.5V | 4.5V | 3.556mm | 17.9324mm | 7.5184mm | 符合RoHS标准 | |||||||||||||||||||||||||
 | 7034L15PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 260mA | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 9kB | 2 | 15 ns | 4KX18 | 3-STATE | 12b | 72 kb | 0.0015A | COMMON | Asynchronous | 18b | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||
 | IDT71V35761S166PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TQFP | 100 | 330mA | RAM, SRAM | 2009 | e0 | 3 (168 Hours) | 100 | 85°C | -40°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 166MHz | 20 | 不合格 | INDUSTRIAL | Parallel | 1 | 3.5 ns | 3-STATE | 36 | 17b | 4.5 Mb | 0.035A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | Non-RoHS Compliant | |||||||||||||||||||||||||||
 | 70V3589S133BCI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 480mA | 133MHz | RAM, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | BOTTOM | BALL | 1 | 1mm | 133MHz | INDUSTRIAL | Parallel | 256kB | 2 | 4.2 ns | 64KX36 | 3-STATE | 32b | 2.3 Mb | 0.04A | COMMON | Synchronous | 36b | 3.45V | 3.15V | 1.7mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | 7025L20PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 240mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 16kB | 2 | 20 ns | 8KX16 | 3-STATE | 26b | 128 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||
 | 71V65703S75PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | TQFP | 100 | 275mA | RAM, SDR, SRAM | Tape & Reel | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | FLOW-THROUGH | 3.3V | QUAD | 鸥翼 | 260 | 1 | 100MHz | 30 | COMMERCIAL | Parallel | 1.1MB | 1 | 7.5 ns | 256KX36 | 18b | 9 Mb | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
 | 7016S35J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 250mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | SEMAPHORE; INTERRUPT FLAG; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 18kB | 2 | 35 ns | 16KX9 | 3-STATE | 28b | 144 kb | 0.015A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | IDT7164S35YG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 28 | RAM, SRAM - Asynchronous | 2009 | e3 | yes | 3 (168 Hours) | 28 | Matte Tin (Sn) - annealed | 70°C | 0°C | 5V | DUAL | J BEND | 260 | 1.27mm | unknown | 未说明 | 不合格 | 5V | COMMERCIAL | Parallel | 0.09mA | 8KX8 | 3-STATE | 8 | 0.015A | 65536 bit | 35 ns | COMMON | 4.5V | 符合RoHS标准 | |||||||||||||||||||||||||||||||||
 | 71V2556S150PFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | TQFP | YES | 100 | 150MHz | RAM, SDR, SRAM | 2011 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 85°C | -40°C | 流水线结构 | 3.3V | QUAD | FLAT | 260 | 1 | 0.65mm | 150MHz | 30 | INDUSTRIAL | Parallel | 512kB | 1 | 0.335mA | 3.8 ns | 3-STATE | 17b | 4.5 Mb | 0.045A | COMMON | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||
 | 7130SA55P | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | PDIP | 48 | 155mA | RAM, SDR, SRAM | 2013 | e0 | no | Discontinued | 1 (Unlimited) | 48 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | DUAL | 245 | 1 | 5V | COMMERCIAL | Parallel | 1kB | 2 | 55 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 5.08mm | 61.7mm | 15.24mm | 3.8mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
 | IDT71V3578YS133PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2005 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 133MHz | 20 | R-PQFP-G100 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 0.26mA | 256KX18 | 3-STATE | 18 | 0.035A | 4718592 bit | 4.2 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||
 | 71V3556SA150BQ | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 11 Weeks | 165 | 150MHz | RAM, SDR, SRAM | 2015 | e0 | no | 活跃 | 3 (168 Hours) | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 3.3V | 225 | 150MHz | Parallel | 512kB | 1 | 17b | 4.5 Mb | 3.465V | 3.135V | 1.2mm | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||
 | IDT7164S35YGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 28 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2009 | e3 | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) - annealed | 85°C | -40°C | 8542.32.00.41 | 5V | DUAL | J BEND | 260 | 1 | 1.27mm | unknown | 40 | 不合格 | 5V | INDUSTRIAL | Parallel | 0.09mA | 8KX8 | 3-STATE | 8 | 0.015A | 65536 bit | 35 ns | COMMON | 4.5V | 5.5V | 4.5V | 3.556mm | 17.9324mm | 7.5184mm | 符合RoHS标准 | |||||||||||||||||||||||||
 | 70V18L20PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 220mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | INDUSTRIAL | Parallel | 72kB | 2 | 20 ns | 64KX9 | 3-STATE | 32b | 576 kb | 0.003A | COMMON | Asynchronous | 9b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | 71342SA20PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 280mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 20 ns | 4KX8 | 3-STATE | 24b | 32 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
 | 70V37L20PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | 100 | RAM, SDR, SRAM | 2009 | 活跃 | 70°C | 0°C | 3.3V | Parallel | 72kB | 2 | 20 ns | 15b | 576 kb | 3.6V | 3V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||||
 | IDT71V3577SA75BGG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | 119 | RAM, SRAM | 2005 | e1 | 119 | 3A991.B.2.A | 锡银铜 | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 1 | 1.27mm | unknown | 不合格 | COMMERCIAL | Parallel | SYNCHRONOUS | 128KX36 | 36 | 4718592 bit | 7.5 ns | 3.465V | 3.135V | 2.36mm | 22mm | 14mm | 符合RoHS标准 | ||||||||||||||||||||||||||||||||
 | 71342LA45J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | PLCC | YES | 52 | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 45 ns | 4KX8 | 3-STATE | 24b | 32 kb | 0.0015A | COMMON | 2V | 5.5V | 4.5V | 4.57mm | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
 | 70V3319S166BF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 500mA | 166MHz | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | PIPELINED OR FLOW-THROUGH ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | 0.8mm | 50MHz | COMMERCIAL | Parallel | 512kB | 2 | 12 ns | 3-STATE | 18b | 4.5 Mb | 0.03A | COMMON | Synchronous | 18b | 3.45V | 3.15V | 1.7mm | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | 709279L12PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 305mA | RAM, SDR, SRAM | 2009 | 活跃 | 70°C | 0°C | 5V | 33.3MHz | Parallel | 64kB | 2 | 12 ns | 30b | 512 kb | Synchronous | 16b | 5.5V | 4.5V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||
 | 71321SA35TF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | LQFP | 64 | 165mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 2kB | 2 | 35 ns | 3-STATE | 22b | 16 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 10mm | 10mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 |
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IDT71V35761S200PF8
Integrated Device Technology (IDT)
分类:Memory
-
70V3569S5BCI8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3577S85PF8
Integrated Device Technology (IDT)
分类:Memory
-
71V2556S150PFGI8
Integrated Device Technology (IDT)
分类:Memory
-
IDT7164S35YG8
Integrated Device Technology (IDT)
分类:Memory
-
7034L15PF
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V35761S166PFI
Integrated Device Technology (IDT)
分类:Memory
-
70V3589S133BCI
Integrated Device Technology (IDT)
分类:Memory
-
7025L20PF8
Integrated Device Technology (IDT)
分类:Memory
-
71V65703S75PFG8
Integrated Device Technology (IDT)
分类:Memory
-
7016S35J8
Integrated Device Technology (IDT)
分类:Memory
-
IDT7164S35YG
Integrated Device Technology (IDT)
分类:Memory
-
71V2556S150PFGI
Integrated Device Technology (IDT)
分类:Memory
-
7130SA55P
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3578YS133PFI
Integrated Device Technology (IDT)
分类:Memory
-
71V3556SA150BQ
Integrated Device Technology (IDT)
分类:Memory
-
IDT7164S35YGI8
Integrated Device Technology (IDT)
分类:Memory
-
70V18L20PFI
Integrated Device Technology (IDT)
分类:Memory
-
71342SA20PF
Integrated Device Technology (IDT)
分类:Memory
-
70V37L20PF8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3577SA75BGG
Integrated Device Technology (IDT)
分类:Memory
-
71342LA45J8
Integrated Device Technology (IDT)
分类:Memory
-
70V3319S166BF
Integrated Device Technology (IDT)
分类:Memory
-
709279L12PF
Integrated Device Technology (IDT)
分类:Memory
-
71321SA35TF8
Integrated Device Technology (IDT)
分类:Memory