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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 最大电流源 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 70V659S12DRGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | PQFP | YES | 208 | RAM, SRAM | Tape & Reel | 2009 | e3 | yes | 3 (168 Hours) | 208 | Matte Tin (Sn) | 85°C | -40°C | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.5mm | 30 | INDUSTRIAL | Parallel | 2 | 0.515mA | 3-STATE | 17b | 4.5 Mb | 0.015A | COMMON | 3.15V | 3.45V | 3.15V | 4.1mm | 28mm | 28mm | 3.5mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||
 | IDT71V3558S166PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2007 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 166MHz | 20 | R-PQFP-G100 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 0.36mA | 256KX18 | 3-STATE | 18 | 0.045A | 4718592 bit | 3.5 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||||||
 | IDT71V65703S80PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2009 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 95MHz | 0.25mA | 256KX36 | 3-STATE | 36 | 0.04A | 9437184 bit | 8 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||
 | IDT71V416YS20PH | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSOP | YES | 44 | RAM, SRAM - Asynchronous | 2008 | e3 | yes | 3 (168 Hours) | 44 | 3A991.B.2.A | Matte Tin (Sn) - annealed | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | 鸥翼 | 260 | 1 | 0.8mm | 30 | R-PDSO-G44 | 不合格 | 3.3V | INDUSTRIAL | Parallel | 0.11mA | 256KX16 | 3-STATE | 16 | 0.02A | 4194304 bit | 20 ns | COMMON | 3V | 3.6V | 3V | 1.2mm | 18.41mm | 10.16mm | Non-RoHS Compliant | |||||||||||||||||||||||||
 | 7134LA55P | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | PDIP | 48 | 200mA | RAM, SDR, SRAM | Bulk | 2013 | e0 | no | Discontinued | 1 (Unlimited) | 48 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | AUTOMATIC POWER-DOWN; BATTERY BACKUP | 5V | DUAL | 245 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 55 ns | 4KX8 | 3-STATE | 24b | 32 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 5.08mm | 61.7mm | 15.24mm | 3.8mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | 70261L35PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 255mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 32kB | 2 | 35 ns | 16KX16 | 3-STATE | 28b | 256 kb | 0.005A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
 | IDT71V3558S166BG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BGA | YES | 119 | RAM, SRAM | 2007 | e0 | 3 (168 Hours) | 119 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 未说明 | 1 | 1.27mm | not_compliant | 166MHz | 未说明 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.35mA | 256KX18 | 3-STATE | 18 | 0.04A | 4718592 bit | 3.5 ns | COMMON | 3.14V | 3.465V | 3.135V | 2.36mm | 22mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||||
 | 7025L17PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 260mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 16kB | 2 | 17 ns | 8KX16 | 3-STATE | 26b | 128 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
 | IDT71V416YS15YI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 44 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2008 | e0 | 44 | 3A991.B.2.A | 锡铅 | 85°C | -40°C | 8542.32.00.41 | 3.3V | DUAL | J BEND | 1 | 1.27mm | 不合格 | INDUSTRIAL | Parallel | 256KX16 | 16 | 4194304 bit | 15 ns | 3.6V | 3V | 3.683mm | 28.575mm | 10.16mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||
 | 70V08L25PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 170mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | SEMAPHORE | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 64kB | 2 | 25 ns | 64KX8 | 3-STATE | 32b | 512 kb | 0.003A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
 | IDT71V124SA12TYI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 32 | RAM, SRAM - Asynchronous | 2007 | e0 | no | 3 (168 Hours) | 32 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 20 | 不合格 | 3.3V | INDUSTRIAL | Parallel | 0.14mA | 128KX8 | 3-STATE | 8 | 0.01A | 1048576 bit | 12 ns | COMMON | 3V | 3.6V | 3.15V | 3.7592mm | 20.955mm | 7.62mm | Non-RoHS Compliant | |||||||||||||||||||||||||||
 | 70V639S10PRF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 128 | 500mA | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 128 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 225 | 1 | 0.5mm | COMMERCIAL | Parallel | 256kB | 2 | 10 ns | 3-STATE | 34b | 2.3 Mb | 0.015A | COMMON | Asynchronous | 18b | 3.45V | 3.15V | 1.6mm | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
 | 70V05L15J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | PLCC | YES | 68 | RAM, SDR, SRAM | 2006 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 8kB | 2 | 0.185mA | 15 ns | 8KX8 | 3-STATE | 26b | 64 kb | COMMON | 3V | 3.6V | 3V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||
 | 70T659S10BCI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 445mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 2.5V | BOTTOM | BALL | 225 | 1 | 1mm | 20 | INDUSTRIAL | Parallel | 2 | 10 ns | 3-STATE | 17b | 4.5 Mb | COMMON | Asynchronous | 36b | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||
 | IDT71V67703S75PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2009 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 117MHz | 0.285mA | 256KX36 | 3-STATE | 36 | 0.07A | 9437184 bit | 7.5 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||
 | 71342LA25PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 260mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | INDUSTRIAL | Parallel | 4kB | 2 | 25 ns | 4KX8 | 3-STATE | 24b | 32 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
 | 71321LA55TF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | LQFP | 64 | 110mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 2kB | 2 | 55 ns | 3-STATE | 11b | 16 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 10mm | 10mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | IDT71T75802S150PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2015 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 流水线结构 | 8542.32.00.41 | 2.5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 150MHz | 20 | R-PQFP-G100 | 不合格 | 2.5V | INDUSTRIAL | Parallel | SYNCHRONOUS | 0.235mA | 1MX18 | 3-STATE | 18 | 0.045A | 18874368 bit | 3.8 ns | COMMON | 2.38V | 2.625V | 2.375V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||
 | 70121L55J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | PLCC | YES | 52 | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP | 5V | QUAD | J BEND | 225 | 1 | 未说明 | 不合格 | 5V | COMMERCIAL | Parallel | 2.3kB | 2 | ASYNCHRONOUS | 55 ns | 3-STATE | 22b | 18 kb | 0.005A | COMMON | 2V | 5.5V | 4.5V | 4.57mm | 19mm | 19mm | 3.63mm | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
 | 70V5388S200BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | BGA | 272 | 470mA | RAM, SDR, SRAM | 2008 | e0 | no | Discontinued | 3 (168 Hours) | 272 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 3.3V | BOTTOM | BALL | 225 | 1 | 200MHz | 20 | 470mA | COMMERCIAL | Parallel | 128kB | 4 | 5 ns | 3-STATE | 16b | 1.1 Mb | 0.015A | COMMON | Synchronous | 18b | 3.45V | 3.15V | 2mm | 27mm | 27mm | 2mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | 70V261L55PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 120mA | RAM, SDR, SRAM | 2001 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 32kB | 2 | 55 ns | 16KX16 | 3-STATE | 14b | 256 kb | 0.003A | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
 | 70V05S15PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | YES | 64 | RAM, SDR, SRAM | 2006 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | COMMERCIAL | Parallel | 8kB | 2 | 15 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.005A | COMMON | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
 | 70V5388S166BC8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 256 | 395mA | RAM, SRAM | Tape & Reel | 2008 | e0 | no | Discontinued | 3 (168 Hours) | 256 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | 166MHz | COMMERCIAL | Parallel | 4 | 3.2 ns | 3-STATE | 16b | 1.1 Mb | 0.015A | COMMON | Synchronous | 18b | 3.45V | 3.15V | 1.4mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
 | 71V3556SA133BQG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 11 Weeks | 表面贴装 | 165 | 300mA | 133MHz | RAM, SDR, SRAM | 2006 | e1 | yes | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 260 | 1 | 133MHz | 30 | COMMERCIAL | Parallel | 512kB | 1 | 4.2 ns | 3-STATE | 17b | 4.5 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||
 | 71342LA25PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 240mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 25 ns | 4KX8 | 3-STATE | 24b | 32 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 |
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70V659S12DRGI8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3558S166PFI
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V65703S80PF
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V416YS20PH
Integrated Device Technology (IDT)
分类:Memory
-
7134LA55P
Integrated Device Technology (IDT)
分类:Memory
-
70261L35PF
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3558S166BG
Integrated Device Technology (IDT)
分类:Memory
-
7025L17PF8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V416YS15YI8
Integrated Device Technology (IDT)
分类:Memory
-
70V08L25PF8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V124SA12TYI
Integrated Device Technology (IDT)
分类:Memory
-
70V639S10PRF
Integrated Device Technology (IDT)
分类:Memory
-
70V05L15J
Integrated Device Technology (IDT)
分类:Memory
-
70T659S10BCI8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V67703S75PFI
Integrated Device Technology (IDT)
分类:Memory
-
71342LA25PFI
Integrated Device Technology (IDT)
分类:Memory
-
71321LA55TF8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71T75802S150PFI
Integrated Device Technology (IDT)
分类:Memory
-
70121L55J8
Integrated Device Technology (IDT)
分类:Memory
-
70V5388S200BG8
Integrated Device Technology (IDT)
分类:Memory
-
70V261L55PF8
Integrated Device Technology (IDT)
分类:Memory
-
70V05S15PF8
Integrated Device Technology (IDT)
分类:Memory
-
70V5388S166BC8
Integrated Device Technology (IDT)
分类:Memory
-
71V3556SA133BQG
Integrated Device Technology (IDT)
分类:Memory
-
71342LA25PF8
Integrated Device Technology (IDT)
分类:Memory