品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间(最大) | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 (最大值) | 电压 - 供电 (最小值) | 输出启用 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | 71V67803S150BQ8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 165 | 305mA | 150MHz | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 165 | 锡铅 | 70°C | 0°C | 流水线结构 | 3.3V | BOTTOM | BALL | 225 | 1 | 150MHz | 20 | COMMERCIAL | Parallel | 1.1MB | 1 | 3.8 ns | 3-STATE | 19b | 9 Mb | 0.05A | COMMON | Synchronous | 18b | 3.465V | 3.135V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
![]() | IDT71V124SA10TYGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 32 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2007 | e3 | 3 (168 Hours) | 32 | 3A991.B.2.B | Matte Tin (Sn) - annealed | 85°C | -40°C | 3.3V | DUAL | J BEND | 260 | 1 | 1.27mm | unknown | 30 | 不合格 | 3.3V | INDUSTRIAL | Parallel | 0.15mA | 128KX8 | 3-STATE | 8 | 0.01A | 1048576 bit | 10 ns | COMMON | 3.15V | 3.6V | 3.15V | 3.7592mm | 20.955mm | 7.62mm | 符合RoHS标准 | ||||||||||||||||||||||||||
![]() | 71421LA20J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 200mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 2kB | 2 | 20 ns | 3-STATE | 22b | 16 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
![]() | 70T651S12DRI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PQFP | 208 | 395mA | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn/Pb) | 85°C | -40°C | 2.5V | QUAD | 鸥翼 | 225 | 1 | 0.5mm | 20 | INDUSTRIAL | Parallel | 1.1MB | 2 | 12 ns | 3-STATE | 18b | 9 Mb | COMMON | Asynchronous | 36b | 2.6V | 2.4V | 4.1mm | 28mm | 28mm | 3.5mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
![]() | 70T633S10BC8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 405mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 2.5V | BOTTOM | BALL | 225 | 1 | 1mm | 20 | COMMERCIAL | Parallel | 2 | 10 ns | 3-STATE | 38b | 9 Mb | 0.01A | COMMON | Asynchronous | 18b | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
![]() | 70121S35J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | PLCC | YES | 52 | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 2.3kB | 2 | 35 ns | 3-STATE | 22b | 18 kb | 0.015A | COMMON | 2V | 5.5V | 4.5V | 4.57mm | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
![]() | IDT71V3556S133BQGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | RAM, SRAM | Tape & Reel (TR) | 2007 | e1 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 3.3V | BOTTOM | BALL | 1mm | 133MHz | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 0.31mA | 128KX36 | 3-STATE | 36 | 0.045A | 4718592 bit | 4.2 ns | COMMON | 3.14V | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||
![]() | 70V7599S166BC | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 790mA | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | 166MHz | COMMERCIAL | Parallel | 512kB | 2 | 20 ns | 3-STATE | 17b | 4.5 Mb | 0.03A | COMMON | Synchronous | 36b | 3.45V | 3.15V | 1.7mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
![]() | IDT71V124SA10TY | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 32 | RAM, SRAM - Asynchronous | 2007 | e0 | no | 3 (168 Hours) | 32 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 3.3V | COMMERCIAL | Parallel | 0.145mA | 128KX8 | 3-STATE | 8 | 0.01A | 1048576 bit | 10 ns | COMMON | 3.15V | 3.6V | 3.15V | 3.7592mm | 20.955mm | 7.62mm | Non-RoHS Compliant | ||||||||||||||||||||||||||
![]() | IDT71V124SA12YI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 32 | 140mA | RAM, SRAM - Asynchronous | 卷带 | 2007 | e0 | 3 (168 Hours) | 32 | 85°C | -40°C | 3.3V | DUAL | J BEND | 225 | 1 | not_compliant | 30 | 不合格 | INDUSTRIAL | Parallel | 1 | 12 ns | 3-STATE | 8 | 17b | 1 Mb | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 3.683mm | 20.955mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||
![]() | IDT71V25761S166PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TQFP | 100 | 320mA | RAM, SRAM | 2009 | e0 | 3 (168 Hours) | 100 | 70°C | 0°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 166MHz | 20 | 不合格 | COMMERCIAL | Parallel | 1 | 3.5 ns | 3-STATE | 36 | 17b | 4.5 Mb | 0.03A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | Non-RoHS Compliant | |||||||||||||||||||||||||||
![]() | IDT71V632S5PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2015 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | 3.3V | COMMERCIAL | Parallel | 1 | SYNCHRONOUS | 100MHz | 0.2mA | 64KX32 | 3-STATE | 32 | 0.015A | 2097152 bit | 5 ns | COMMON | 3.14V | 3.63V | 3.135V | YES | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||
![]() | 71V65903S85PFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | TQFP | 100 | 60mA | RAM, SRAM | Tape & Reel | 2005 | 活跃 | 85°C | -40°C | 3.3V | 91MHz | Parallel | 1 | 8.5 ns | 19b | 9 Mb | Synchronous | 18b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||
![]() | 71V416S12BE | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TFBGA | 48 | 180mA | RAM, SDR, SRAM - Asynchronous | 2012 | e0 | no | 活跃 | 4 (72 Hours) | 48 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 225 | 1 | COMMERCIAL | Parallel | 512kB | 1 | 12 ns | 18b | 4 Mb | Asynchronous | 16b | 3.6V | 3V | 9mm | 9mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||
![]() | 7143LA20PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 280mA | RAM, SRAM | Tape & Reel | 2013 | 活跃 | 70°C | 0°C | 5V | Parallel | 2 | 20 ns | 11b | 32 kb | Asynchronous | 16b | 5.5V | 4.5V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||
![]() | 7132LA55FB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 48 | 140mA | RAM, SRAM | 2007 | 活跃 | 125°C | -55°C | 5V | Parallel | 2 | 55 ns | 11b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 19mm | 19mm | 2.2mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||||
![]() | IDT6116LA25SO | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | SOIC | YES | 24 | RAM, SRAM - Asynchronous | 2008 | e0 | 1 (Unlimited) | 24 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | 8542.32.00.41 | 5V | DUAL | 鸥翼 | 225 | 1 | 1.27mm | not_compliant | 30 | R-PDSO-G24 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 0.11mA | 2KX8 | 3-STATE | 8 | 0.00002A | 16384 bit | 25 ns | COMMON | 2V | 5.5V | 4.5V | YES | 2.65mm | 15.4mm | 7.5mm | Non-RoHS Compliant | ||||||||||||||||||||||
![]() | 71V35761SA166BG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 320mA | 166MHz | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 3.3V | BOTTOM | BALL | 225 | 1 | 166MHz | 20 | COMMERCIAL | Parallel | 512kB | 1 | 3.5 ns | 3-STATE | 17b | 4.5 Mb | 0.03A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
![]() | IDT71T75902S80PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TQFP | 100 | 250mA | RAM, SRAM | 2005 | e0 | 3 (168 Hours) | 100 | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 2.5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 95MHz | 20 | 不合格 | COMMERCIAL | Parallel | 1 | 8 ns | 3-STATE | 18 | 20b | 18 Mb | 0.04A | COMMON | Synchronous | 18b | 2.38V | 2.625V | 2.375V | 20mm | Non-RoHS Compliant | ||||||||||||||||||||||||||
![]() | 71V016SA15PHG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TSOP | 44 | 130mA | RAM, SDR, SRAM - Asynchronous | Tape & Reel | 2011 | 活跃 | 70°C | 0°C | 3.3V | Parallel | 128kB | 1 | 15 ns | 16b | 1 Mb | Asynchronous | 16b | 3.6V | 3V | 18.41mm | 10.16mm | 1mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||
![]() | 70V9079S6PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 395mA | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 240 | 1 | 52.6MHz | COMMERCIAL | Parallel | 32kB | 2 | 6 ns | 30b | 256 kb | Synchronous | 8b | 3.6V | 3V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
![]() | IDT71V124SA20TYG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 32 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2007 | e3 | 3 (168 Hours) | 32 | 3A991.B.2.B | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | DUAL | J BEND | 260 | 1 | 1.27mm | unknown | 30 | 不合格 | 3.3V | COMMERCIAL | Parallel | 0.095mA | 128KX8 | 3-STATE | 8 | 0.01A | 1048576 bit | 20 ns | COMMON | 3V | 3.6V | 3V | 3.7592mm | 20.955mm | 7.62mm | 符合RoHS标准 | ||||||||||||||||||||||||||
![]() | 70V261S25PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 170mA | RAM, SDR, SRAM | 2001 | 活跃 | 70°C | 0°C | 3.3V | Parallel | 32kB | 2 | 25 ns | 28b | 256 kb | Asynchronous | 16b | 3.6V | 3V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||
![]() | 709269S12PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 345mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 33.3MHz | 20 | 5V | COMMERCIAL | Parallel | 32kB | 2 | 12 ns | 16KX16 | 3-STATE | 28b | 256 kb | 0.015A | COMMON | Synchronous | 16b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||
![]() | IDT71V432S6PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2014 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 83MHz | 0.18mA | 32KX32 | 3-STATE | 32 | 0.015A | 1048576 bit | 6 ns | COMMON | 3.14V | 3.63V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant |
71V67803S150BQ8
Integrated Device Technology (IDT)
分类:Memory
IDT71V124SA10TYGI8
Integrated Device Technology (IDT)
分类:Memory
71421LA20J
Integrated Device Technology (IDT)
分类:Memory
70T651S12DRI
Integrated Device Technology (IDT)
分类:Memory
70T633S10BC8
Integrated Device Technology (IDT)
分类:Memory
70121S35J8
Integrated Device Technology (IDT)
分类:Memory
IDT71V3556S133BQGI8
Integrated Device Technology (IDT)
分类:Memory
70V7599S166BC
Integrated Device Technology (IDT)
分类:Memory
IDT71V124SA10TY
Integrated Device Technology (IDT)
分类:Memory
IDT71V124SA12YI8
Integrated Device Technology (IDT)
分类:Memory
IDT71V25761S166PF
Integrated Device Technology (IDT)
分类:Memory
IDT71V632S5PF8
Integrated Device Technology (IDT)
分类:Memory
71V65903S85PFGI8
Integrated Device Technology (IDT)
分类:Memory
71V416S12BE
Integrated Device Technology (IDT)
分类:Memory
7143LA20PF8
Integrated Device Technology (IDT)
分类:Memory
7132LA55FB
Integrated Device Technology (IDT)
分类:Memory
IDT6116LA25SO
Integrated Device Technology (IDT)
分类:Memory
71V35761SA166BG
Integrated Device Technology (IDT)
分类:Memory
IDT71T75902S80PF
Integrated Device Technology (IDT)
分类:Memory
71V016SA15PHG8
Integrated Device Technology (IDT)
分类:Memory
70V9079S6PF
Integrated Device Technology (IDT)
分类:Memory
IDT71V124SA20TYG8
Integrated Device Technology (IDT)
分类:Memory
70V261S25PF8
Integrated Device Technology (IDT)
分类:Memory
709269S12PF8
Integrated Device Technology (IDT)
分类:Memory
IDT71V432S6PFI
Integrated Device Technology (IDT)
分类:Memory
