品牌是'IDT' (6623)

对比

图片

产品型号

品牌

数据表

库存

价格(含增值税)

数量

Rohs

工厂交货时间

底架

包装/外壳

表面安装

引脚数

Current - Supply (Nom)

包装

已出版

JESD-609代码

无铅代码

零件状态

湿度敏感性等级(MSL)

终止次数

ECCN 代码

端子表面处理

最高工作温度

最小工作温度

附加功能

HTS代码

电压 - 供电

端子位置

终端形式

峰值回流焊温度(摄氏度)

功能数量

端子间距

Reach合规守则

频率

时间@峰值回流温度-最大值(s)

JESD-30代码

资历状况

电源

温度等级

界面

内存大小

端口的数量

操作模式

时钟频率

电源电流-最大值

访问时间

组织结构

输出特性

内存宽度

地址总线宽度

密度

待机电流-最大值

记忆密度

访问时间(最大)

I/O类型

同步/异步

字长

待机电压-最小值

电压 - 供电 (最大值)

电压 - 供电 (最小值)

座位高度(最大)

长度

宽度

器件厚度

辐射硬化

RoHS状态

无铅

IDT71016S12YGI
IDT71016S12YGI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

44

RAM, SRAM - Asynchronous

2008

e3

yes

3 (168 Hours)

44

3A991.B.2.B

Matte Tin (Sn) - annealed

85°C

-40°C

8542.32.00.41

5V

DUAL

J BEND

260

1

1.27mm

unknown

30

不合格

5V

INDUSTRIAL

Parallel

0.21mA

64KX16

3-STATE

16

0.01A

1048576 bit

12 ns

COMMON

4.5V

5.5V

4.5V

3.683mm

28.575mm

10.16mm

符合RoHS标准

71V65803S150BQG8
71V65803S150BQG8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

YES

165

150MHz

RAM, SDR, SRAM

2005

e1

yes

活跃

3 (168 Hours)

165

Tin/Silver/Copper (Sn/Ag/Cu)

70°C

0°C

流水线结构

3.3V

BOTTOM

BALL

260

1

150MHz

30

COMMERCIAL

Parallel

1.1MB

1

0.325mA

6.7 ns

3-STATE

19b

9 Mb

0.04A

COMMON

3.465V

3.135V

15mm

13mm

1.2mm

符合RoHS标准

无铅

7014S15J
7014S15J
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

52

250mA

RAM, SDR, SRAM

2008

e0

no

活跃

3 (168 Hours)

52

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

LOW POWER STANDBY MODE; BATTERY BACK-UP

5V

QUAD

J BEND

225

1

5V

COMMERCIAL

Parallel

4.5kB

2

15 ns

4KX9

3-STATE

24b

36 kb

COMMON

Asynchronous

9b

5.5V

4.5V

19mm

19mm

3.63mm

符合RoHS标准

含铅

IDT71T75702S75BG8
IDT71T75702S75BG8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA

YES

119

RAM, SRAM

Tape & Reel (TR)

2005

e0

3 (168 Hours)

119

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

2.5V

BOTTOM

BALL

未说明

1

1.27mm

not_compliant

未说明

不合格

2.5V

COMMERCIAL

Parallel

SYNCHRONOUS

100MHz

0.275mA

512KX36

3-STATE

36

0.04A

18874368 bit

7.5 ns

COMMON

2.38V

2.625V

2.375V

2.36mm

22mm

14mm

Non-RoHS Compliant

70V3589S166DR
70V3589S166DR
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PQFP

208

500mA

RAM, SDR, SRAM

Bulk

2009

e0

no

活跃

3 (168 Hours)

208

Tin/Lead (Sn/Pb)

70°C

0°C

3.3V

QUAD

鸥翼

225

1

0.5mm

166MHz

COMMERCIAL

Parallel

256kB

2

20 ns

64KX36

3-STATE

32b

2.3 Mb

0.03A

COMMON

Synchronous

36b

3.45V

3.15V

28mm

28mm

3.5mm

符合RoHS标准

含铅

70T3599S133DR
70T3599S133DR
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PQFP

208

370mA

RAM, SRAM

2009

e0

no

活跃

3 (168 Hours)

208

Tin/Lead (Sn/Pb)

70°C

0°C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

2.5V

QUAD

鸥翼

225

1

0.5mm

133MHz

20

COMMERCIAL

Parallel

2

15 ns

3-STATE

34b

4.5 Mb

0.015A

COMMON

Synchronous

36b

2.6V

2.4V

4.1mm

28mm

28mm

3.5mm

符合RoHS标准

含铅

70V37L20PFI
70V37L20PFI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

220mA

RAM, SDR, SRAM

2009

e0

no

活跃

3 (168 Hours)

100

Tin/Lead (Sn85Pb15)

85°C

-40°C

中断标志

3.3V

QUAD

鸥翼

240

1

0.5mm

20

INDUSTRIAL

Parallel

72kB

2

20 ns

3-STATE

30b

576 kb

0.003A

COMMON

Asynchronous

18b

3V

3.6V

3V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

IDT71V124SA10YGI8
IDT71V124SA10YGI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

表面贴装

32

150mA

RAM, SRAM - Asynchronous

卷带

2007

85°C

-40°C

3.3V

Parallel

1

10 ns

17b

1 Mb

Asynchronous

8b

3.6V

3.15V

符合RoHS标准

7014S25J
7014S25J
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

52

240mA

RAM, SDR, SRAM

2008

e0

no

活跃

3 (168 Hours)

52

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

LOW POWER STANDBY MODE; BATTERY BACK-UP

5V

QUAD

J BEND

225

1

5V

COMMERCIAL

Parallel

4.5kB

2

25 ns

4KX9

3-STATE

24b

36 kb

COMMON

Asynchronous

9b

5.5V

4.5V

19mm

19mm

3.63mm

符合RoHS标准

含铅

70V25L20PF
70V25L20PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

175mA

RAM, SDR, SRAM

2008

e0

no

活跃

3 (168 Hours)

100

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

3.3V

QUAD

鸥翼

240

1

0.5mm

20

COMMERCIAL

Parallel

16kB

2

20 ns

8KX16

3-STATE

26b

128 kb

COMMON

Asynchronous

16b

3V

3.6V

3V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

IDT71V65802S100PF
IDT71V65802S100PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

2007

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

70°C

0°C

流水线结构

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

100MHz

20

R-PQFP-G100

不合格

3.3V

COMMERCIAL

Parallel

SYNCHRONOUS

0.25mA

512KX18

3-STATE

18

0.04A

9437184 bit

5 ns

COMMON

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

IDT71T75702S85PFGI
IDT71T75702S85PFGI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

2005

e0

3 (168 Hours)

100

3A991.B.2.A

锡铅

85°C

-40°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

2.5V

QUAD

鸥翼

240

1

0.65mm

30

R-PQFP-G100

不合格

2.5V

INDUSTRIAL

Parallel

SYNCHRONOUS

90MHz

0.245mA

512KX36

3-STATE

36

0.06A

18874368 bit

8.5 ns

COMMON

2.38V

2.625V

2.375V

1.6mm

20mm

14mm

符合RoHS标准

IDT7164L25YI8
IDT7164L25YI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

28

RAM, SRAM - Asynchronous

Tape & Reel (TR)

2009

e0

3 (168 Hours)

28

EAR99

Tin/Lead (Sn85Pb15)

85°C

-40°C

8542.32.00.41

5V

DUAL

J BEND

225

1

1.27mm

not_compliant

30

不合格

5V

INDUSTRIAL

Parallel

0.15mA

8KX8

3-STATE

8

0.00006A

65536 bit

25 ns

COMMON

2V

5.5V

4.5V

3.556mm

17.9324mm

7.5184mm

Non-RoHS Compliant

70V24S20PF8
70V24S20PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

TQFP

YES

100

RAM, SDR, SRAM

Tape & Reel

2008

e0

no

活跃

3 (168 Hours)

100

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

3.3V

QUAD

鸥翼

240

1

0.5mm

20

COMMERCIAL

Parallel

8kB

2

20 ns

4KX16

3-STATE

24b

64 kb

0.005A

COMMON

3V

3.6V

3V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

70V06L25PF8
70V06L25PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

64

165mA

RAM, SDR, SRAM

2008

e0

no

活跃

3 (168 Hours)

64

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

3.3V

QUAD

鸥翼

240

1

0.8mm

20

COMMERCIAL

Parallel

16kB

2

25 ns

16KX8

3-STATE

28b

128 kb

COMMON

Asynchronous

8b

2V

3.6V

3V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

7132SA100J
7132SA100J
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

52

155mA

RAM, SDR, SRAM

2010

活跃

70°C

0°C

5V

Parallel

2kB

2

100 ns

22b

16 kb

Asynchronous

8b

5.5V

4.5V

19mm

19mm

3.63mm

符合RoHS标准

含铅

7133LA25PF8
7133LA25PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

270mA

RAM, SDR, SRAM

2013

e0

no

活跃

3 (168 Hours)

100

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

5V

QUAD

鸥翼

240

1

0.5mm

20

5V

COMMERCIAL

Parallel

4kB

2

25 ns

3-STATE

22b

32 kb

0.0015A

COMMON

Asynchronous

16b

2V

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

71321LA25PFI8
71321LA25PFI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

64

220mA

RAM, SDR, SRAM

Tape & Reel

2008

e0

no

活跃

3 (168 Hours)

64

EAR99

Tin/Lead (Sn85Pb15)

85°C

-40°C

5V

QUAD

鸥翼

240

1

0.8mm

20

5V

INDUSTRIAL

Parallel

2kB

2

25 ns

3-STATE

22b

16 kb

0.004A

COMMON

Asynchronous

8b

2V

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

IDT71T75702S85BG8
IDT71T75702S85BG8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA

YES

119

RAM, SRAM

Tape & Reel (TR)

2005

e0

3 (168 Hours)

119

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

2.5V

BOTTOM

BALL

未说明

1

1.27mm

not_compliant

未说明

不合格

2.5V

COMMERCIAL

Parallel

SYNCHRONOUS

90MHz

0.225mA

512KX36

3-STATE

36

0.04A

18874368 bit

8.5 ns

COMMON

2.38V

2.625V

2.375V

2.36mm

22mm

14mm

Non-RoHS Compliant

IDT71T75702S85BG
IDT71T75702S85BG
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA

YES

119

RAM, SRAM

2005

e0

3 (168 Hours)

119

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

2.5V

BOTTOM

BALL

未说明

1

1.27mm

not_compliant

未说明

不合格

2.5V

COMMERCIAL

Parallel

SYNCHRONOUS

90MHz

0.225mA

512KX36

3-STATE

36

0.04A

18874368 bit

8.5 ns

COMMON

2.38V

2.625V

2.375V

2.36mm

22mm

14mm

Non-RoHS Compliant

71V35761SA200BQG8
71V35761SA200BQG8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

11 Weeks

表面贴装

FBGA

165

360mA

RAM, SRAM

Tape & Reel

2009

e1

yes

活跃

3 (168 Hours)

165

Tin/Silver/Copper (Sn/Ag/Cu)

70°C

0°C

流水线结构

3.3V

BOTTOM

BALL

260

1

200MHz

30

COMMERCIAL

Parallel

1

3.1 ns

3-STATE

17b

4.5 Mb

0.03A

COMMON

Synchronous

36b

3.465V

3.135V

15mm

13mm

1.2mm

符合RoHS标准

无铅

7014S15J8
7014S15J8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

52

250mA

RAM, SDR, SRAM

2008

e0

no

活跃

3 (168 Hours)

52

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

LOW POWER STANDBY MODE; BATTERY BACK-UP

5V

QUAD

J BEND

225

1

5V

COMMERCIAL

Parallel

4.5kB

2

15 ns

4KX9

3-STATE

12b

36 kb

COMMON

Asynchronous

9b

5.5V

4.5V

19mm

19mm

3.63mm

符合RoHS标准

含铅

71V632S5PFG
71V632S5PFG
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

200mA

RAM, SDR, SRAM

100MHz

2015

e3

yes

Discontinued

3 (168 Hours)

100

Matte Tin (Sn) - annealed

70°C

0°C

ALSO REQUIRES 3.3V I/O SUPPLY

3.3V

QUAD

鸥翼

260

1

0.65mm

100MHz

30

INDUSTRIAL

Parallel

256kB

1

5 ns

64KX32

3-STATE

16b

2 Mb

COMMON

Synchronous

32b

3.63V

3.135V

20mm

14mm

1.4mm

符合RoHS标准

无铅

IDT71T75602S200PFI8
IDT71T75602S200PFI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

Tape & Reel (TR)

2010

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

85°C

-40°C

流水线结构

8542.32.00.41

2.5V

QUAD

鸥翼

240

1

0.65mm

not_compliant

200MHz

20

R-PQFP-G100

不合格

2.5V

INDUSTRIAL

Parallel

SYNCHRONOUS

512KX36

3-STATE

36

18874368 bit

3.2 ns

COMMON

2.38V

2.625V

2.375V

1.6mm

20mm

14mm

Non-RoHS Compliant

IDT71V416YL12PH
IDT71V416YL12PH
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

TSOP

YES

44

RAM, SRAM - Asynchronous

2008

e0

no

3 (168 Hours)

44

3A991.B.2.A

Tin/Lead (Sn85Pb15)

70°C

0°C

8542.32.00.41

3.3V

DUAL

鸥翼

225

1

0.8mm

not_compliant

20

R-PDSO-G44

不合格

3.3V

COMMERCIAL

Parallel

0.17mA

256KX16

3-STATE

16

0.01A

4194304 bit

12 ns

COMMON

3V

3.6V

3V

1.2mm

18.41mm

10.16mm

Non-RoHS Compliant