品牌是'IDT' (6623)

对比

图片

产品型号

品牌

数据表

库存

价格(含增值税)

数量

Rohs

工厂交货时间

底架

包装/外壳

表面安装

引脚数

Current - Supply (Nom)

包装

已出版

JESD-609代码

无铅代码

零件状态

湿度敏感性等级(MSL)

终止次数

ECCN 代码

端子表面处理

最高工作温度

最小工作温度

附加功能

HTS代码

电压 - 供电

端子位置

终端形式

峰值回流焊温度(摄氏度)

功能数量

端子间距

Reach合规守则

频率

时间@峰值回流温度-最大值(s)

JESD-30代码

资历状况

电源

温度等级

界面

内存大小

端口的数量

操作模式

时钟频率

电源电流-最大值

访问时间

组织结构

输出特性

内存宽度

地址总线宽度

密度

待机电流-最大值

记忆密度

访问时间(最大)

I/O类型

同步/异步

字长

待机电压-最小值

电压 - 供电 (最大值)

电压 - 供电 (最小值)

座位高度(最大)

长度

宽度

器件厚度

辐射硬化

RoHS状态

无铅

IDT71V2546S100PFI
IDT71V2546S100PFI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

2008

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

85°C

-40°C

流水线结构

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

100MHz

20

R-PQFP-G100

不合格

2.53.3V

OTHER

Parallel

SYNCHRONOUS

0.26mA

128KX36

3-STATE

36

0.045A

4718592 bit

5 ns

COMMON

3.14V

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

IDT71V65603S100PFI
IDT71V65603S100PFI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

2015

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

85°C

-40°C

流水线结构

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

100MHz

20

R-PQFP-G100

不合格

3.3V

INDUSTRIAL

Parallel

SYNCHRONOUS

0.27mA

256KX36

3-STATE

36

0.06A

9437184 bit

5 ns

COMMON

3.14V

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

70V7319S133BC
70V7319S133BC
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

256

645mA

RAM, SRAM

2009

e0

no

活跃

3 (168 Hours)

256

Tin/Lead (Sn63Pb37)

70°C

0°C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

3.3V

BOTTOM

BALL

225

1

1mm

133MHz

COMMERCIAL

Parallel

2

15 ns

3-STATE

18b

4 Mb

0.03A

COMMON

Synchronous

18b

3.45V

3.15V

1.7mm

17mm

17mm

1.4mm

符合RoHS标准

含铅

IDT71T75702S80PFG8
IDT71T75702S80PFG8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

Tape & Reel (TR)

2005

e3

100

3A991.B.2.A

哑光锡

70°C

0°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

2.5V

QUAD

鸥翼

1

0.65mm

R-PQFP-G100

不合格

2.5V

COMMERCIAL

Parallel

SYNCHRONOUS

95MHz

0.25mA

512KX36

3-STATE

36

0.04A

18874368 bit

8 ns

COMMON

2.38V

2.625V

2.375V

1.6mm

20mm

14mm

符合RoHS标准

709349L7PF
709349L7PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

400mA

RAM, SDR, SRAM

2008

e0

no

活跃

3 (168 Hours)

100

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

5V

QUAD

鸥翼

240

1

0.5mm

45.45MHz

20

5V

COMMERCIAL

Parallel

9kB

2

7.5 ns

4KX18

3-STATE

12b

72 kb

0.003A

COMMON

Synchronous

18b

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

70V35L25PF
70V35L25PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

TQFP

YES

100

RAM, SDR, SRAM

Bulk

2008

e0

no

活跃

3 (168 Hours)

100

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

3.3V

QUAD

鸥翼

240

1

0.5mm

20

COMMERCIAL

Parallel

18kB

2

0.165mA

25 ns

8KX18

3-STATE

26b

144 kb

COMMON

3V

3.6V

3V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

7140LA25JGI
7140LA25JGI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

LCC

YES

52

RAM, SRAM

2016

e3

yes

1 (Unlimited)

52

EAR99

Matte Tin (Sn) - annealed

85°C

-40°C

5V

QUAD

J BEND

225

1

20

5V

INDUSTRIAL

Parallel

2

1KX8

3-STATE

8

20b

8 kb

0.004A

COMMON

2V

符合RoHS标准

IDT71T75702S80PFGI
IDT71T75702S80PFGI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

2005

e0

3 (168 Hours)

100

3A991.B.2.A

锡铅

85°C

-40°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

2.5V

QUAD

鸥翼

240

1

0.65mm

30

R-PQFP-G100

不合格

2.5V

INDUSTRIAL

Parallel

SYNCHRONOUS

95MHz

0.27mA

512KX36

3-STATE

36

0.06A

18874368 bit

8 ns

COMMON

2.38V

2.625V

2.375V

1.6mm

20mm

14mm

符合RoHS标准

709349L7PF8
709349L7PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

400mA

RAM, SDR, SRAM

2008

活跃

70°C

0°C

5V

45.45MHz

Parallel

9kB

2

7.5 ns

24b

72 kb

Synchronous

18b

5.5V

4.5V

14mm

14mm

1.4mm

符合RoHS标准

含铅

71321LA25PFI8
71321LA25PFI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

64

220mA

RAM, SDR, SRAM

Tape & Reel

2008

e0

no

活跃

3 (168 Hours)

64

EAR99

Tin/Lead (Sn85Pb15)

85°C

-40°C

5V

QUAD

鸥翼

240

1

0.8mm

20

5V

INDUSTRIAL

Parallel

2kB

2

25 ns

3-STATE

22b

16 kb

0.004A

COMMON

Asynchronous

8b

2V

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

IDT71T75602S200PFI8
IDT71T75602S200PFI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

Tape & Reel (TR)

2010

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

85°C

-40°C

流水线结构

8542.32.00.41

2.5V

QUAD

鸥翼

240

1

0.65mm

not_compliant

200MHz

20

R-PQFP-G100

不合格

2.5V

INDUSTRIAL

Parallel

SYNCHRONOUS

512KX36

3-STATE

36

18874368 bit

3.2 ns

COMMON

2.38V

2.625V

2.375V

1.6mm

20mm

14mm

Non-RoHS Compliant

70V24S35J8
70V24S35J8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

84

180mA

RAM, SDR, SRAM

2004

e0

no

活跃

1 (Unlimited)

84

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

3.3V

QUAD

J BEND

225

1

COMMERCIAL

Parallel

8kB

2

35 ns

4KX16

3-STATE

24b

64 kb

0.005A

COMMON

Asynchronous

16b

3V

3.6V

3V

29.21mm

29.21mm

3.63mm

符合RoHS标准

含铅

7005S15J8
7005S15J8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

PLCC

68

RAM, SDR, SRAM

Tape & Reel

2012

活跃

70°C

0°C

5V

Parallel

8kB

2

15 ns

26b

64 kb

5.5V

4.5V

24mm

24mm

3.63mm

符合RoHS标准

含铅

7014S20J
7014S20J
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

52

245mA

RAM, SDR, SRAM

2008

e0

no

活跃

3 (168 Hours)

52

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

LOW POWER STANDBY MODE; BATTERY BACK-UP

5V

QUAD

J BEND

225

1

5V

COMMERCIAL

Parallel

4.5kB

2

20 ns

4KX9

3-STATE

12b

36 kb

COMMON

Asynchronous

9b

5.5V

4.5V

19mm

19mm

3.63mm

符合RoHS标准

含铅

IDT71T75702S85PF8
IDT71T75702S85PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

Tape & Reel (TR)

2005

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

70°C

0°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

2.5V

QUAD

鸥翼

240

1

0.65mm

not_compliant

20

R-PQFP-G100

不合格

2.5V

COMMERCIAL

Parallel

SYNCHRONOUS

90MHz

0.225mA

512KX36

3-STATE

36

0.04A

18874368 bit

8.5 ns

COMMON

2.38V

2.625V

2.375V

1.6mm

20mm

14mm

Non-RoHS Compliant

IDT71T75702S85BG8
IDT71T75702S85BG8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA

YES

119

RAM, SRAM

Tape & Reel (TR)

2005

e0

3 (168 Hours)

119

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

2.5V

BOTTOM

BALL

未说明

1

1.27mm

not_compliant

未说明

不合格

2.5V

COMMERCIAL

Parallel

SYNCHRONOUS

90MHz

0.225mA

512KX36

3-STATE

36

0.04A

18874368 bit

8.5 ns

COMMON

2.38V

2.625V

2.375V

2.36mm

22mm

14mm

Non-RoHS Compliant

IDT71T75702S85BG
IDT71T75702S85BG
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA

YES

119

RAM, SRAM

2005

e0

3 (168 Hours)

119

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

2.5V

BOTTOM

BALL

未说明

1

1.27mm

not_compliant

未说明

不合格

2.5V

COMMERCIAL

Parallel

SYNCHRONOUS

90MHz

0.225mA

512KX36

3-STATE

36

0.04A

18874368 bit

8.5 ns

COMMON

2.38V

2.625V

2.375V

2.36mm

22mm

14mm

Non-RoHS Compliant

71V35761SA200BQG8
71V35761SA200BQG8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

11 Weeks

表面贴装

FBGA

165

360mA

RAM, SRAM

Tape & Reel

2009

e1

yes

活跃

3 (168 Hours)

165

Tin/Silver/Copper (Sn/Ag/Cu)

70°C

0°C

流水线结构

3.3V

BOTTOM

BALL

260

1

200MHz

30

COMMERCIAL

Parallel

1

3.1 ns

3-STATE

17b

4.5 Mb

0.03A

COMMON

Synchronous

36b

3.465V

3.135V

15mm

13mm

1.2mm

符合RoHS标准

无铅

7014S15J8
7014S15J8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

52

250mA

RAM, SDR, SRAM

2008

e0

no

活跃

3 (168 Hours)

52

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

LOW POWER STANDBY MODE; BATTERY BACK-UP

5V

QUAD

J BEND

225

1

5V

COMMERCIAL

Parallel

4.5kB

2

15 ns

4KX9

3-STATE

12b

36 kb

COMMON

Asynchronous

9b

5.5V

4.5V

19mm

19mm

3.63mm

符合RoHS标准

含铅

71V632S5PFG
71V632S5PFG
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

200mA

RAM, SDR, SRAM

100MHz

2015

e3

yes

Discontinued

3 (168 Hours)

100

Matte Tin (Sn) - annealed

70°C

0°C

ALSO REQUIRES 3.3V I/O SUPPLY

3.3V

QUAD

鸥翼

260

1

0.65mm

100MHz

30

INDUSTRIAL

Parallel

256kB

1

5 ns

64KX32

3-STATE

16b

2 Mb

COMMON

Synchronous

32b

3.63V

3.135V

20mm

14mm

1.4mm

符合RoHS标准

无铅

7025L45J8
7025L45J8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

84

RAM, SDR, SRAM

2009

e0

no

活跃

1 (Unlimited)

84

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

INTERRUPT FLAG; ARBITER; SEMAPHORE

5V

QUAD

J BEND

225

1

5V

COMMERCIAL

Parallel

16kB

2

45 ns

8KX16

3-STATE

26b

128 kb

0.0015A

COMMON

Asynchronous

16b

2V

5.5V

4.5V

29.21mm

29.21mm

3.63mm

符合RoHS标准

含铅

IDT71T75702S85PFG8
IDT71T75702S85PFG8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

Tape & Reel (TR)

2005

e3

100

3A991.B.2.A

哑光锡

70°C

0°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

2.5V

QUAD

鸥翼

1

0.65mm

R-PQFP-G100

不合格

2.5V

COMMERCIAL

Parallel

SYNCHRONOUS

90MHz

0.225mA

512KX36

3-STATE

36

0.04A

18874368 bit

8.5 ns

COMMON

2.38V

2.625V

2.375V

1.6mm

20mm

14mm

符合RoHS标准

71V256SA12PZGI8
71V256SA12PZGI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TSSOP

28

90mA

RAM, SDR, SRAM - Asynchronous

2012

e3

yes

活跃

3 (168 Hours)

28

EAR99

Matte Tin (Sn) - annealed

85°C

-40°C

3.3V

DUAL

鸥翼

260

1

0.55mm

30

INDUSTRIAL

Parallel

32kB

1

12 ns

32KX8

3-STATE

15b

256 kb

0.002A

COMMON

Asynchronous

8b

3V

3.6V

3V

8mm

11.8mm

1mm

符合RoHS标准

无铅

7014S20J8
7014S20J8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

52

245mA

RAM, SDR, SRAM

2008

e0

no

活跃

3 (168 Hours)

52

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

LOW POWER STANDBY MODE; BATTERY BACK-UP

5V

QUAD

J BEND

225

1

5V

COMMERCIAL

Parallel

4.5kB

2

20 ns

4KX9

3-STATE

12b

36 kb

COMMON

Asynchronous

9b

5.5V

4.5V

19mm

19mm

3.63mm

符合RoHS标准

含铅

71V416S15BE
71V416S15BE
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

12 Weeks

表面贴装

TFBGA

48

170mA

RAM, SDR, SRAM - Asynchronous

2014

e0

no

活跃

4 (72 Hours)

48

Tin/Lead (Sn63Pb37)

70°C

0°C

3.3V

BOTTOM

BALL

225

1

COMMERCIAL

Parallel

512kB

1

15 ns

18b

4 Mb

Asynchronous

16b

3.6V

3V

9mm

9mm

1.2mm

符合RoHS标准

含铅