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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 最大电流源 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 输出启用 | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 7054S20PRF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 128 | 300mA | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 128 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | 5V | QUAD | FLAT | 225 | 1 | 0.5mm | 5V | COMMERCIAL | Parallel | 4kB | 4 | 20 ns | 3-STATE | 12b | 32 kb | 0.0015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | 7024L15JG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 260mA | RAM, SDR, SRAM | 2013 | 活跃 | 70°C | 0°C | 5V | Parallel | 8kB | 2 | 15 ns | 24b | 64 kb | Asynchronous | 16b | 5.5V | 4.5V | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||
 | 70T3519S166BC8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 450mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 2.5V | BOTTOM | BALL | 225 | 1 | 1mm | 166MHz | 20 | COMMERCIAL | Parallel | 2 | 12 ns | 3-STATE | 36b | 9 Mb | 0.015A | COMMON | Synchronous | 36b | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
 | 71V3557S80PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 250mA | RAM, SRAM | Tape & Reel | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 95MHz | 30 | COMMERCIAL | Parallel | 1 | 8 ns | 3-STATE | 17b | 4.5 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
 | IDT71V3556S133BQGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | RAM, SRAM | 2007 | e1 | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 260 | 1 | 1mm | unknown | 133MHz | 30 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 0.31mA | 128KX36 | 3-STATE | 36 | 0.045A | 4718592 bit | 4.2 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.2mm | 15mm | 13mm | 符合RoHS标准 | ||||||||||||||||||||||||||
 | 70V658S12DRI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PQFP | 208 | 515mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn/Pb) | 85°C | -40°C | 3.3V | QUAD | 鸥翼 | 225 | 1 | 0.5mm | 20 | INDUSTRIAL | Parallel | 256kB | 2 | 12 ns | 64KX36 | 3-STATE | 32b | 2.3 Mb | 0.015A | COMMON | Asynchronous | 36b | 3.45V | 3.15V | 4.1mm | 28mm | 28mm | 3.5mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
 | IDT71V016SA20YI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 44 | RAM, SRAM - Asynchronous | 2007 | e0 | 3 (168 Hours) | 44 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 8542.32.00.41 | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 3.3V | INDUSTRIAL | Parallel | 0.12mA | 64KX16 | 3-STATE | 16 | 0.01A | 1048576 bit | 20 ns | COMMON | 3.15V | 3.6V | 3V | 3.683mm | 28.575mm | 10.16mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||
 | 71V35761SA183BGG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 340mA | RAM, SRAM | Tape & Reel | 2009 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 流水线结构 | 3.3V | BOTTOM | BALL | 260 | 1 | 183MHz | 30 | COMMERCIAL | Parallel | 1 | 3.3 ns | 3-STATE | 17b | 4.5 Mb | 0.03A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
 | 7143SA55G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | 68 | 285mA | RAM, SDR, SRAM | Bulk | 2013 | 活跃 | 70°C | 0°C | 5V | Parallel | 4kB | 2 | 55 ns | 22b | 32 kb | Asynchronous | 16b | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||
 | 7025L35J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 210mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 16kB | 2 | 35 ns | 8KX16 | 3-STATE | 13b | 128 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 4.57mm | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | 70V06S25PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | YES | 64 | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | COMMERCIAL | Parallel | 16kB | 2 | 0.19mA | 25 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.005A | COMMON | 2V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
| 71V2546S100BGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 260mA | RAM, SRAM | 2011 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 流水线结构 | 3.3V | BOTTOM | BALL | 225 | 1 | 100MHz | 20 | OTHER | Parallel | 1 | 5 ns | 3-STATE | 17b | 4.5 Mb | 0.045A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
 | 71V67602S133PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | TQFP | 100 | 260mA | 133MHz | RAM, SDR, SRAM | 2004 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 133MHz | 30 | COMMERCIAL | Parallel | 1.1MB | 1 | 4.2 ns | 256KX36 | 3-STATE | 18b | 9 Mb | 0.05A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||
 | 71321SA25PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 220mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 2kB | 2 | 25 ns | 3-STATE | 22b | 16 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | 71V321S25PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 130mA | RAM, SDR, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | BATTERY BACKUP;AUTOMATIC POWER DOWN | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | COMMERCIAL | Parallel | 2kB | 2 | 25 ns | 3-STATE | 11b | 16 kb | 0.005A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
| 70P249L65BYGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | TFBGA | YES | 100 | RAM, SDR, SRAM | Tape & Reel | 2008 | e1 | yes | 3 (168 Hours) | 100 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 1.8V | BOTTOM | BALL | 260 | 1 | 0.5mm | 30 | INDUSTRIAL | Parallel | 8kB | 2 | 0.07mA | 65 ns | 4KX16 | 3-STATE | 16 | 24b | 64 kb | 0.000006A | COMMON | 3V | 1.8V | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||
 | 70V25S35PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 180mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 16kB | 2 | 35 ns | 8KX16 | 3-STATE | 26b | 128 kb | 0.005A | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | 70T3519S200BCG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 525mA | 200MHz | RAM, SDR, SRAM | 2009 | e1 | yes | 活跃 | 3 (168 Hours) | 256 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | PIPELINED OR FLOW-THROUGH ARCHITECTURE | 2.5V | BOTTOM | BALL | 260 | 1 | 1mm | 200MHz | 30 | COMMERCIAL | Parallel | 1.1MB | 2 | 3.4 ns | 3-STATE | 36b | 9 Mb | 0.015A | COMMON | Synchronous | 36b | 2.6V | 2.4V | 1.7mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||
 | IDT71P71604S167BQ8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | DDR, RAM, SRAM | Tape & Reel (TR) | 2007 | e0 | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 8542.32.00.41 | 1.8V | BOTTOM | BALL | 225 | 1 | 1mm | not_compliant | 167MHz | 20 | 不合格 | 1.5/1.81.8V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.6mA | 512KX36 | 3-STATE | 36 | 0.275A | 18874368 bit | 0.5 ns | COMMON | 1.7V | 1.9V | 1.7V | 1.2mm | 15mm | 13mm | Non-RoHS Compliant | |||||||||||||||||||||||||
 | IDT71V016SA20YI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 44 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2007 | e0 | no | 3 (168 Hours) | 44 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 85°C | -40°C | ALSO OPERATES WITH 3V TO 3.6 V SUPPLY | 8542.32.00.41 | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 3.3V | INDUSTRIAL | Parallel | 0.12mA | 64KX16 | 3-STATE | 16 | 0.01A | 1048576 bit | 20 ns | COMMON | 3.15V | 3.6V | 3.15V | 3.683mm | 28.575mm | 10.16mm | Non-RoHS Compliant | |||||||||||||||||||||||||
 | IDT6116SA25SO8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | SOIC | YES | 24 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2008 | e0 | 1 (Unlimited) | 24 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | 8542.32.00.41 | 5V | DUAL | 鸥翼 | 225 | 1 | 1.27mm | not_compliant | 30 | R-PDSO-G24 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 0.12mA | 2KX8 | 3-STATE | 8 | 0.002A | 16384 bit | 25 ns | COMMON | 4.5V | 5.5V | 4.5V | YES | 2.65mm | 15.4mm | 7.5mm | Non-RoHS Compliant | |||||||||||||||||||||||
 | IDT71V632S7PFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | Tape & Reel (TR) | 2015 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 20 | R-PQFP-G100 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 66MHz | 0.16mA | 64KX32 | 3-STATE | 32 | 0.015A | 2097152 bit | 7 ns | COMMON | 3.14V | 3.63V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||
 | 7016S35PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 80 | 250mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 80 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | SEMAPHORE; INTERRUPT FLAG; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | 20 | 5V | COMMERCIAL | Parallel | 18kB | 2 | 35 ns | 16KX9 | 3-STATE | 28b | 144 kb | 0.015A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | 71V67603S150BQI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 165 | 325mA | 150MHz | RAM, SDR, SRAM | 2009 | 活跃 | 85°C | -40°C | 3.3V | 150MHz | 325mA | Parallel | 1.1MB | 1 | 3.8 ns | 18b | 9 Mb | Synchronous | 36b | 3.465V | 3.135V | 1.2mm | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||
| 7005L17G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | 68 | 260mA | RAM, SDR, SRAM | 2012 | 活跃 | 70°C | 0°C | 5V | Parallel | 8kB | 2 | 17 ns | 26b | 64 kb | Asynchronous | 8b | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 |
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7054S20PRF
Integrated Device Technology (IDT)
分类:Memory
-
7024L15JG
Integrated Device Technology (IDT)
分类:Memory
-
70T3519S166BC8
Integrated Device Technology (IDT)
分类:Memory
-
71V3557S80PFG8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3556S133BQGI
Integrated Device Technology (IDT)
分类:Memory
-
70V658S12DRI
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V016SA20YI
Integrated Device Technology (IDT)
分类:Memory
-
71V35761SA183BGG8
Integrated Device Technology (IDT)
分类:Memory
-
7143SA55G
Integrated Device Technology (IDT)
分类:Memory
-
7025L35J8
Integrated Device Technology (IDT)
分类:Memory
-
70V06S25PF8
Integrated Device Technology (IDT)
分类:Memory
-
71V2546S100BGI
Integrated Device Technology (IDT)
分类:Memory
-
71V67602S133PFG8
Integrated Device Technology (IDT)
分类:Memory
-
71321SA25PF
Integrated Device Technology (IDT)
分类:Memory
-
71V321S25PF8
Integrated Device Technology (IDT)
分类:Memory
-
70P249L65BYGI8
Integrated Device Technology (IDT)
分类:Memory
-
70V25S35PF8
Integrated Device Technology (IDT)
分类:Memory
-
70T3519S200BCG
Integrated Device Technology (IDT)
分类:Memory
-
IDT71P71604S167BQ8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V016SA20YI8
Integrated Device Technology (IDT)
分类:Memory
-
IDT6116SA25SO8
Integrated Device Technology (IDT)
分类:Memory
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IDT71V632S7PFI8
Integrated Device Technology (IDT)
分类:Memory
-
7016S35PF
Integrated Device Technology (IDT)
分类:Memory
-
71V67603S150BQI8
Integrated Device Technology (IDT)
分类:Memory
-
7005L17G
Integrated Device Technology (IDT)
分类:Memory