品牌是'IDT' (6623)

对比

图片

产品型号

品牌

数据表

库存

价格(含增值税)

数量

Rohs

工厂交货时间

底架

包装/外壳

表面安装

引脚数

质量

Current - Supply (Nom)

包装

已出版

JESD-609代码

无铅代码

零件状态

湿度敏感性等级(MSL)

终止次数

ECCN 代码

端子表面处理

最高工作温度

最小工作温度

附加功能

HTS代码

电压 - 供电

端子位置

终端形式

峰值回流焊温度(摄氏度)

功能数量

端子间距

Reach合规守则

频率

时间@峰值回流温度-最大值(s)

JESD-30代码

最大电流源

资历状况

电源

温度等级

界面

内存大小

端口的数量

操作模式

时钟频率

电源电流-最大值

访问时间

组织结构

输出特性

内存宽度

地址总线宽度

密度

待机电流-最大值

记忆密度

访问时间(最大)

I/O类型

同步/异步

字长

待机电压-最小值

电压 - 供电 (最大值)

电压 - 供电 (最小值)

高度

座位高度(最大)

长度

宽度

器件厚度

辐射硬化

RoHS状态

无铅

IDT71V65802S150PF8
IDT71V65802S150PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

Tape & Reel (TR)

2007

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

70°C

0°C

流水线结构

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

150MHz

20

R-PQFP-G100

不合格

3.3V

COMMERCIAL

Parallel

SYNCHRONOUS

0.325mA

512KX18

3-STATE

18

0.04A

9437184 bit

3.8 ns

COMMON

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

71V424S15YGI8
71V424S15YGI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

12 Weeks

表面贴装

36

160mA

RAM, SDR, SRAM - Asynchronous

Tape & Reel

2009

e3

yes

活跃

3 (168 Hours)

36

Matte Tin (Sn) - annealed

85°C

-40°C

3.3V

DUAL

J BEND

260

1

INDUSTRIAL

Parallel

512kB

1

15 ns

3-STATE

19b

4 Mb

0.02A

COMMON

Asynchronous

8b

3V

3.6V

3V

3.683mm

23.4mm

10.2mm

2.2mm

符合RoHS标准

无铅

70V38L15PF
70V38L15PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

235mA

RAM, SDR, SRAM

Bulk

2009

e0

no

活跃

3 (168 Hours)

100

Tin/Lead (Sn85Pb15)

70°C

0°C

3.3V

QUAD

鸥翼

240

1

0.5mm

20

COMMERCIAL

Parallel

128kB

2

15 ns

64KX18

3-STATE

32b

1.1 Mb

0.003A

COMMON

Asynchronous

18b

3V

3.6V

3V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

IDT71V67603S150PF
IDT71V67603S150PF
Integrated Device Technology (IDT) 数据表

12 In Stock

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

2009

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

70°C

0°C

流水线结构

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

150MHz

20

R-PQFP-G100

不合格

3.3V

COMMERCIAL

Parallel

SYNCHRONOUS

0.305mA

256KX36

3-STATE

36

0.05A

9437184 bit

3.8 ns

COMMON

3.14V

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

71V3557S85BG8
71V3557S85BG8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

BGA

119

225mA

100MHz

RAM, SDR, SRAM

Tape & Reel

2009

e0

no

活跃

3 (168 Hours)

119

Tin/Lead (Sn63Pb37)

70°C

0°C

FLOW-THROUGH ARCHITECTURE

3.3V

BOTTOM

BALL

225

1

91MHz

20

COMMERCIAL

Parallel

512kB

1

8.5 ns

3-STATE

17b

4.5 Mb

0.04A

COMMON

Synchronous

36b

3.465V

3.135V

2.36mm

14mm

22mm

2.15mm

符合RoHS标准

含铅

71421SA35PF8
71421SA35PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

64

360.605934mg

165mA

RAM, SDR, SRAM

2008

活跃

70°C

0°C

5V

80mA

Parallel

2kB

2

35 ns

22b

16 kb

Asynchronous

8b

5.5V

4.5V

1.4mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

70V9089S15PF8
70V9089S15PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

220mA

RAM, SRAM

Tape & Reel

2009

e0

no

活跃

3 (168 Hours)

100

Tin/Lead (Sn85Pb15)

70°C

0°C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

3.3V

QUAD

鸥翼

240

1

0.5mm

28.5MHz

20

COMMERCIAL

Parallel

2

30 ns

64KX8

3-STATE

32b

512 kb

0.005A

COMMON

Synchronous

8b

3V

3.6V

3V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

IDT71V3558S133PF8
IDT71V3558S133PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

Tape & Reel (TR)

2007

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

70°C

0°C

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

133MHz

20

R-PQFP-G100

不合格

3.3V

COMMERCIAL

Parallel

SYNCHRONOUS

0.3mA

256KX18

3-STATE

18

0.04A

4718592 bit

4.2 ns

COMMON

3.14V

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

IDT71V3557SA85BG
IDT71V3557SA85BG
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA

YES

119

RAM, SRAM

2009

e0

3 (168 Hours)

119

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

3.3V

BOTTOM

BALL

未说明

1

1.27mm

not_compliant

未说明

不合格

3.3V

COMMERCIAL

Parallel

SYNCHRONOUS

90MHz

0.225mA

128KX36

3-STATE

36

0.04A

4718592 bit

8.5 ns

COMMON

3.14V

3.465V

3.135V

2.36mm

22mm

14mm

Non-RoHS Compliant

IDT71V25761SA166BG
IDT71V25761SA166BG
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA

YES

119

RAM, SRAM

2009

e0

3 (168 Hours)

119

3A991.B.2.A

Tin/Lead (Sn63Pb37)

70°C

0°C

流水线结构

8542.32.00.41

3.3V

BOTTOM

BALL

未说明

1

1.27mm

not_compliant

166MHz

未说明

不合格

2.53.3V

COMMERCIAL

Parallel

SYNCHRONOUS

0.32mA

128KX36

3-STATE

36

0.03A

4718592 bit

3.5 ns

COMMON

3.14V

3.465V

3.135V

2.36mm

22mm

14mm

Non-RoHS Compliant

70V09L15PF8
70V09L15PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

657.000198mg

235mA

RAM, SDR, SRAM

2009

活跃

70°C

0°C

3.3V

235mA

Parallel

128kB

2

15 ns

17b

1 Mb

Asynchronous

8b

3.6V

3V

1.4mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

7130LA55J
7130LA55J
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

PLCC

52

110mA

RAM, SDR, SRAM

1997

活跃

70°C

0°C

5V

Parallel

1kB

2

55 ns

20b

8 kb

Asynchronous

8b

5.5V

4.5V

19mm

19mm

3.63mm

符合RoHS标准

含铅

IDT71V3556S166BGI8
IDT71V3556S166BGI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

BGA

YES

119

RAM, SRAM

Tape & Reel (TR)

2007

e0

3 (168 Hours)

119

3A991.B.2.A

Tin/Lead (Sn63Pb37)

85°C

-40°C

8542.32.00.41

3.3V

BOTTOM

BALL

未说明

1

1.27mm

not_compliant

166MHz

未说明

不合格

3.3V

INDUSTRIAL

Parallel

SYNCHRONOUS

0.36mA

128KX36

3-STATE

36

0.045A

4718592 bit

3.5 ns

COMMON

3.14V

3.465V

3.135V

2.36mm

22mm

14mm

Non-RoHS Compliant

70V05L15JG
70V05L15JG
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

PLCC

YES

68

RAM, SDR, SRAM

2009

e3

yes

活跃

1 (Unlimited)

68

EAR99

Matte Tin (Sn) - annealed

70°C

0°C

3.3V

QUAD

260

1

COMMERCIAL

Parallel

8kB

2

0.185mA

15 ns

8KX8

3-STATE

26b

64 kb

COMMON

3V

3.6V

3V

24mm

24mm

3.63mm

符合RoHS标准

无铅

709289L9PF
709289L9PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

400mA

RAM, SDR, SRAM

2005

e0

no

活跃

3 (168 Hours)

100

Tin/Lead (Sn85Pb15)

70°C

0°C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

5V

QUAD

鸥翼

240

1

0.5mm

40MHz

20

5V

COMMERCIAL

Parallel

128kB

2

20 ns

64KX16

3-STATE

32b

1 Mb

0.003A

COMMON

Synchronous

16b

5.5V

4.5V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

70V631S10PRF
70V631S10PRF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

128

500mA

RAM, SDR, SRAM

Bulk

2009

e0

no

活跃

3 (168 Hours)

128

Tin/Lead (Sn85Pb15)

70°C

0°C

3.3V

QUAD

鸥翼

225

1

0.5mm

COMMERCIAL

Parallel

512kB

2

10 ns

3-STATE

36b

4.5 Mb

0.015A

COMMON

Asynchronous

18b

3.45V

3.15V

1.6mm

20mm

14mm

1.4mm

符合RoHS标准

含铅

IDT71V3577S85PFI
IDT71V3577S85PFI
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

2005

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

85°C

-40°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

20

R-PQFP-G100

不合格

3.3V

INDUSTRIAL

Parallel

SYNCHRONOUS

87MHz

0.19mA

128KX36

3-STATE

36

0.035A

4718592 bit

8.5 ns

COMMON

3.14V

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

70V24L55PF
70V24L55PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

155mA

RAM, SDR, SRAM

2004

e0

no

活跃

3 (168 Hours)

100

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

3.3V

QUAD

鸥翼

240

1

0.5mm

20

COMMERCIAL

Parallel

8kB

2

55 ns

4KX16

3-STATE

24b

64 kb

COMMON

Asynchronous

16b

2V

3.6V

3V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

70V35S15PF8
70V35S15PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

215mA

RAM, SDR, SRAM

2008

e0

no

活跃

3 (168 Hours)

100

EAR99

Tin/Lead (Sn85Pb15)

70°C

0°C

3.3V

QUAD

鸥翼

240

1

0.5mm

20

COMMERCIAL

Parallel

18kB

2

15 ns

8KX18

3-STATE

26b

144 kb

0.005A

COMMON

Asynchronous

18b

3V

3.6V

3V

1.6mm

14mm

14mm

1.4mm

符合RoHS标准

含铅

IDT71V65703S85PFI8
IDT71V65703S85PFI8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

Tape & Reel (TR)

2009

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

85°C

-40°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

20

R-PQFP-G100

不合格

3.3V

INDUSTRIAL

Parallel

SYNCHRONOUS

90MHz

0.06mA

256KX36

3-STATE

36

0.06A

9437184 bit

8.5 ns

COMMON

3.14V

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

IDT71V67903S85PF
IDT71V67903S85PF
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

2009

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

70°C

0°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

20

R-PQFP-G100

不合格

3.3V

COMMERCIAL

Parallel

SYNCHRONOUS

87MHz

0.19mA

512KX18

3-STATE

18

0.05A

9437184 bit

8.5 ns

COMMON

3.14V

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant

IDT71V416VS15Y
IDT71V416VS15Y
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

YES

44

RAM, SRAM - Asynchronous

2005

e3

yes

3 (168 Hours)

44

3A991.B.2.A

Matte Tin (Sn) - annealed

70°C

0°C

8542.32.00.41

3.3V

DUAL

J BEND

260

1

1.27mm

unknown

30

不合格

3.3V

COMMERCIAL

Parallel

0.17mA

256KX16

3-STATE

16

0.02A

4194304 bit

15 ns

COMMON

3V

3.6V

3V

3.683mm

28.575mm

10.16mm

Non-RoHS Compliant

70261L35PF8
70261L35PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

100

255mA

RAM, SDR, SRAM

2009

活跃

70°C

0°C

5V

Parallel

32kB

2

35 ns

28b

256 kb

Asynchronous

16b

5.5V

4.5V

14mm

14mm

1.4mm

符合RoHS标准

含铅

70V9279S6PRF8
70V9279S6PRF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

7 Weeks

表面贴装

TQFP

128

395mA

RAM, SDR, SRAM

2008

e0

no

活跃

3 (168 Hours)

128

Tin/Lead (Sn85Pb15)

70°C

0°C

FLOW-THROUGH OR PIPELINED ARCHITECTURE

3.3V

QUAD

鸥翼

225

1

0.5mm

52.6MHz

COMMERCIAL

Parallel

64kB

2

6 ns

3-STATE

30b

512 kb

0.005A

COMMON

Synchronous

16b

3V

3.6V

3V

1.6mm

20mm

14mm

1.4mm

符合RoHS标准

含铅

IDT71V2559S75PF8
IDT71V2559S75PF8
Integrated Device Technology (IDT) 数据表

N/A

-

最小起订量: 1

最小包装量: 1

LQFP

YES

100

RAM, SRAM

Tape & Reel (TR)

2007

e0

3 (168 Hours)

100

3A991.B.2.A

Tin/Lead (Sn85Pb15)

70°C

0°C

FLOW-THROUGH ARCHITECTURE

8542.32.00.41

3.3V

QUAD

鸥翼

240

1

0.65mm

not_compliant

20

R-PQFP-G100

不合格

2.53.3V

COMMERCIAL

Parallel

SYNCHRONOUS

100MHz

0.275mA

256KX18

3-STATE

18

0.04A

4718592 bit

7.5 ns

COMMON

3.14V

3.465V

3.135V

1.6mm

20mm

14mm

Non-RoHS Compliant