品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 地址总线宽度 | 密度 | 待机电流-最大值 | 筛选水平 | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 (最大值) | 电压 - 供电 (最小值) | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | |||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | 7143SA25G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | 68 | 300mA | RAM, SDR, SRAM | Bulk | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 25 ns | 3-STATE | 22b | 32 kb | 0.015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||
![]() | 7143LA90J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 250mA | RAM, SDR, SRAM | 2013 | 活跃 | 70°C | 0°C | 5V | Parallel | 4kB | 2 | 90 ns | 22b | 32 kb | Asynchronous | 16b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||
![]() | 7006L17J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 260mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 16kB | 2 | 17 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||
![]() | 7025S35GB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 通孔 | 84 | 300mA | RAM, SDR, SRAM | Bulk | 2012 | 活跃 | 125°C | -55°C | 5V | Parallel | 16kB | 2 | 35 ns | 26b | 128 kb | Asynchronous | 16b | 5.5V | 4.5V | 27.94mm | 27.94mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||
![]() | 7143SA20J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 310mA | RAM, SDR, SRAM | 2013 | no | 活跃 | EAR99 | 70°C | 0°C | 5V | Parallel | 4kB | 2 | 20 ns | 22b | 32 kb | Asynchronous | 16b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||
![]() | 7143SA35J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 295mA | RAM, SDR, SRAM | 2013 | 活跃 | 70°C | 0°C | 5V | Parallel | 4kB | 2 | 35 ns | 22b | 32 kb | Asynchronous | 16b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||
![]() | 70V3399S133BC | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | YES | 256 | 133MHz | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | 133MHz | COMMERCIAL | Parallel | 256kB | 2 | 0.4mA | 4.2 ns | 3-STATE | 34b | 2.3 Mb | 0.03A | COMMON | 3.45V | 3.15V | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||
![]() | 7005L55J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 210mA | RAM, SDR, SRAM | 2012 | 活跃 | 70°C | 0°C | 5V | Parallel | 8kB | 2 | 55 ns | 26b | 64 kb | Asynchronous | 8b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||
![]() | 70V9279S9PRFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | YES | 128 | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 128 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 3.3V | QUAD | 鸥翼 | 225 | 1 | 0.5mm | INDUSTRIAL | Parallel | 64kB | 2 | 66MHz | 9 ns | 3-STATE | 30b | 512 kb | 0.005A | COMMON | 3V | 3.6V | 3V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
![]() | 71V016SA15BFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 48 | 130mA | RAM, SDR, SRAM - Asynchronous | 2009 | 活跃 | 85°C | -40°C | 3.3V | Parallel | 128kB | 1 | 15 ns | 16b | 1 Mb | Asynchronous | 16b | 3.6V | 3V | 7mm | 7mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||
![]() | 70V06L35J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 155mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 16kB | 2 | 35 ns | 16KX8 | 3-STATE | 28b | 128 kb | COMMON | Asynchronous | 8b | 2V | 3.6V | 3V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||
![]() | 7133LA35G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | 68 | 250mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 35 ns | 3-STATE | 22b | 32 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||
![]() | 7164L85TDB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | CDIP | 28 | RAM, SDR, SRAM - Asynchronous | Bulk | 2007 | 活跃 | 125°C | -55°C | 5V | Parallel | 8kB | 1 | 85 ns | 13b | 64 kb | 5.5V | 4.5V | 37.72mm | 7.62mm | 3.56mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||
![]() | 5962-8855202XA | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | CDIP | 28 | 115mA | RAM, SDR, SRAM - Asynchronous | 2001 | 活跃 | 125°C | -55°C | 5V | Parallel | 32kB | 1 | 70 ns | 15b | 256 kb | Asynchronous | 8b | 5.5V | 4.5V | 37.2mm | 15.24mm | 1.65mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||
![]() | 7164S85TDB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | CDIP | 28 | 100mA | RAM, SRAM - Asynchronous | Bulk | 2007 | 活跃 | 125°C | -55°C | 5V | Parallel | 1 | 85 ns | 13b | 64 kb | Asynchronous | 8b | 5.5V | 4.5V | 37.72mm | 7.62mm | 3.56mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||
![]() | 7133SA25J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 300mA | RAM, SDR, SRAM | 2005 | 活跃 | 70°C | 0°C | 5V | Parallel | 4kB | 2 | 25 ns | 22b | 32 kb | Asynchronous | 16b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||
![]() | 7005L20FB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 68 | 320mA | RAM, SDR, SRAM | 2012 | 活跃 | 125°C | -55°C | 5V | Parallel | 8kB | 2 | 20 ns | 26b | 64 kb | Asynchronous | 8b | 5.5V | 4.5V | 24mm | 24mm | 2mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||
![]() | 70V3579S4BFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 460mA | RAM, SDR, SRAM | Bulk | 2008 | e1 | yes | 活跃 | 3 (168 Hours) | 208 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE | 3.3V | BOTTOM | BALL | 260 | 1 | 0.8mm | 133MHz | 30 | COMMERCIAL | Parallel | 128kB | 2 | 7.5 ns | 3-STATE | 30b | 1.1 Mb | COMMON | Synchronous | 36b | 3.45V | 3.15V | 1.7mm | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||
![]() | 7005S20J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 290mA | RAM, SDR, SRAM | 2012 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 20 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.155A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||
![]() | 7133SA55GB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | NO | 68 | RAM, SDR, SRAM | Military grade | Bulk | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 68 | Tin/Lead (Sn/Pb) | 125°C | -55°C | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 20 | 5V | MILITARY | Parallel | 4kB | 2 | 0.315mA | 55 ns | 3-STATE | 22b | 32 kb | 0.015A | MIL-PRF-38535 | COMMON | 2V | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||
![]() | 70P255L65BYGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | TFBGA | YES | 100 | RAM, SDR, SRAM | Bulk | 2011 | e1 | yes | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 1.8V | BOTTOM | BALL | 260 | 1 | 0.5mm | 30 | INDUSTRIAL | Parallel | 16kB | 2 | 0.07mA | 65 ns | 8KX16 | 3-STATE | 26b | 128 kb | 0.000008A | COMMON | 3V | 1.8V | 6mm | 6mm | 1mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||
![]() | 7006L35J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 210mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 16kB | 2 | 35 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||
![]() | 7005S55GB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 68 | RAM, SRAM | Bulk | 2012 | 活跃 | 125°C | -55°C | 5V | Parallel | 2 | 26b | 64 kb | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||
![]() | 70V07S55J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 140mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 2 | 55 ns | 3-STATE | 15b | 256 kb | 0.006A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||
![]() | 7133SA70G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | 68 | 280mA | RAM, SDR, SRAM | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 70 ns | 3-STATE | 22b | 32 kb | 0.015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 |
7143SA25G
Integrated Device Technology (IDT)
分类:Memory
7143LA90J8
Integrated Device Technology (IDT)
分类:Memory
7006L17J
Integrated Device Technology (IDT)
分类:Memory
7025S35GB
Integrated Device Technology (IDT)
分类:Memory
7143SA20J8
Integrated Device Technology (IDT)
分类:Memory
7143SA35J
Integrated Device Technology (IDT)
分类:Memory
70V3399S133BC
Integrated Device Technology (IDT)
分类:Memory
7005L55J8
Integrated Device Technology (IDT)
分类:Memory
70V9279S9PRFI
Integrated Device Technology (IDT)
分类:Memory
71V016SA15BFGI8
Integrated Device Technology (IDT)
分类:Memory
70V06L35J8
Integrated Device Technology (IDT)
分类:Memory
7133LA35G
Integrated Device Technology (IDT)
分类:Memory
7164L85TDB
Integrated Device Technology (IDT)
分类:Memory
5962-8855202XA
Integrated Device Technology (IDT)
分类:Memory
7164S85TDB
Integrated Device Technology (IDT)
分类:Memory
7133SA25J8
Integrated Device Technology (IDT)
分类:Memory
7005L20FB
Integrated Device Technology (IDT)
分类:Memory
70V3579S4BFG
Integrated Device Technology (IDT)
分类:Memory
7005S20J8
Integrated Device Technology (IDT)
分类:Memory
7133SA55GB
Integrated Device Technology (IDT)
分类:Memory
70P255L65BYGI
Integrated Device Technology (IDT)
分类:Memory
7006L35J
Integrated Device Technology (IDT)
分类:Memory
7005S55GB
Integrated Device Technology (IDT)
分类:Memory
70V07S55J8
Integrated Device Technology (IDT)
分类:Memory
7133SA70G
Integrated Device Technology (IDT)
分类:Memory
