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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 输出启用 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 7134SA45CB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | DIP | 48 | 280mA | RAM, SRAM | Military grade | Bulk | 2005 | e0 | no | 活跃 | 1 (Unlimited) | 48 | Tin/Lead (Sn/Pb) | 125°C | -55°C | AUTOMATIC POWER-DOWN | 5V | DUAL | 240 | 1 | 5V | MILITARY | Parallel | 2 | 45 ns | 4KX8 | 3-STATE | 24b | 32 kb | 0.03A | 38535Q/M;38534H;883B | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 61.72mm | 15.24mm | 3.3mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
| 7006L55GB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 68 | RAM, SDR, SRAM | Military grade | Bulk | 2010 | e0 | no | 活跃 | 1 (Unlimited) | 68 | Tin/Lead (Sn/Pb) | 125°C | -55°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 5V | MILITARY | Parallel | 16kB | 2 | 55 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.004A | MIL-PRF-38535 | COMMON | 2V | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
| 7050L35PQF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | PQFP | 132 | RAM, SDR, SRAM | 2011 | e0 | no | Discontinued | Tin/Lead (Sn/Pb) | 70°C | 0°C | Parallel | 1kB | 35 ns | 24.13mm | 24.13mm | 3.55mm | 无 | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||
| 7142SA35L48B | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | LCC | 48 | 230mA | RAM, SRAM | Bulk | 2007 | 活跃 | 125°C | -55°C | 5V | Parallel | 2 | 35 ns | 22b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 14.2mm | 14.22mm | 1.78mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||
| 70V3589S166BFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | YES | 208 | RAM, SDR, SRAM | 2009 | e1 | yes | 活跃 | 3 (168 Hours) | 208 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | PIPELINED OR FLOW-THROUGH ARCHITECTURE | 3.3V | BOTTOM | BALL | 1 | 0.8mm | 166MHz | COMMERCIAL | Parallel | 256kB | 2 | 0.5mA | 20 ns | 64KX36 | 3-STATE | 32b | 2.3 Mb | 0.03A | COMMON | 3.45V | 3.15V | 1.7mm | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||
| 7025L25GB | Integrated Device Technology (IDT) | 数据表 | 60 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 通孔 | 84 | 280mA | RAM, SRAM | Military grade | Bulk | 2012 | e0 | no | 活跃 | 1 (Unlimited) | 84 | Tin/Lead (Sn/Pb) | 125°C | -55°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | 5V | PERPENDICULAR | PIN/PEG | 1 | MILITARY | Parallel | 2 | 25 ns | 8KX16 | 3-STATE | 26b | 128 kb | 0.004A | MIL-PRF-38535 | COMMON | Asynchronous | 16b | 5.5V | 4.5V | YES | 27.94mm | 27.94mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
| 70V06L20JI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 195mA | RAM, SRAM | 2008 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 3.3V | QUAD | J BEND | 225 | 1 | INDUSTRIAL | Parallel | 2 | 20 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.005A | COMMON | Asynchronous | 8b | 2V | 3.6V | 3V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
| 70T633S10BCGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | YES | 256 | RAM, SDR, SRAM | Bulk | 2012 | e1 | yes | 活跃 | 3 (168 Hours) | 256 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 2.5V | BOTTOM | BALL | 260 | 1 | 1mm | 30 | INDUSTRIAL | Parallel | 1.1MB | 2 | 0.445mA | 10 ns | 3-STATE | 38b | 9 Mb | COMMON | 2.6V | 2.4V | 1.7mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||
| 7132SA35L48B | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | LCC | 48 | 230mA | RAM, SDR, SRAM | Military grade | Bulk | 2010 | e0 | no | 活跃 | 1 (Unlimited) | 48 | Tin/Lead (Sn/Pb) | 125°C | -55°C | AUTOMATIC POWER-DOWN | 5V | QUAD | 240 | 1 | 1.016mm | 5V | MILITARY | Parallel | 2kB | 2 | 35 ns | 3-STATE | 22b | 16 kb | 0.03A | MIL-PRF-38535 | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 14.2mm | 14.22mm | 1.78mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
| 7164S35TDB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | CDIP | 28 | RAM, SRAM - Asynchronous | Bulk | 2011 | 活跃 | 125°C | -55°C | 5V | Parallel | 1 | 13b | 64 kb | 37.72mm | 7.62mm | 3.56mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||||||
| 7130LA35CB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 通孔 | DIP | 48 | 170mA | RAM, SRAM | Bulk | 2013 | 活跃 | 125°C | -55°C | 5V | Parallel | 2 | 35 ns | 20b | 8 kb | Asynchronous | 8b | 5.5V | 4.5V | 61.72mm | 15.24mm | 3.3mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||
| 70V06L35J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 155mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 16kB | 2 | 35 ns | 16KX8 | 3-STATE | 28b | 128 kb | COMMON | Asynchronous | 8b | 2V | 3.6V | 3V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
| 7143LA25G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | 68 | 270mA | RAM, SDR, SRAM | Bulk | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 25 ns | 3-STATE | 22b | 32 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
| 7006L20JI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 320mA | RAM, SDR, SRAM | Tape & Reel | 2008 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | INDUSTRIAL | Parallel | 16kB | 2 | 20 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.004A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||
| 7005L20G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | 68 | 240mA | RAM, SDR, SRAM | 2012 | 活跃 | 70°C | 0°C | 5V | Parallel | 8kB | 2 | 20 ns | 26b | 64 kb | Asynchronous | 8b | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||
| 7050L25G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | YES | 108 | RAM, SRAM | 2001 | e0 | no | 活跃 | 1 (Unlimited) | 132 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | 备用电池操作 | 8542.32.00.41 | 5V | QUAD | 鸥翼 | 240 | 1 | 2.54mm | S-PQFP-G132 | 5V | COMMERCIAL | 4 | 0.305mA | 1KX8 | 3-STATE | 0.0006A | 8192 bit | 25 ns | PARALLEL | COMMON | 2V | 5.5V | 4.5V | 30.48mm | 30.48mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
| 7025S35FB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 84 | RAM, SDR, SRAM | Bulk | 2012 | 活跃 | 125°C | -55°C | 5V | Parallel | 16kB | 2 | 35 ns | 26b | 128 kb | 5.5V | 4.5V | 29.2mm | 29.21mm | 2.54mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||
| 71V016SA10BFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 48 | RAM, SDR, SRAM - Asynchronous | 2011 | 活跃 | 85°C | -40°C | 3.3V | Parallel | 128kB | 1 | 10 ns | 16b | 1 Mb | 3.6V | 3.15V | 7mm | 7mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||
| 7025L70FB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 84 | 250mA | RAM, SRAM | Military grade | 2012 | e0 | no | 活跃 | 1 (Unlimited) | 84 | Tin/Lead (Sn/Pb) | 125°C | -55°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | 5V | QUAD | FLAT | 1 | MILITARY | Parallel | 2 | 70 ns | 8KX16 | 3-STATE | 26b | 128 kb | 0.004A | MIL-PRF-38535 | COMMON | Asynchronous | 16b | 5.5V | 4.5V | YES | 29.2mm | 29.21mm | 2.54mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
| 7134LA35CB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 通孔 | DIP | 48 | 250mA | RAM, SRAM | Military grade | Bulk | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 48 | Tin/Lead (Sn/Pb) | 125°C | -55°C | AUTOMATIC POWER-DOWN; BATTERY BACKUP | 5V | DUAL | 240 | 1 | 5V | MILITARY | Parallel | 2 | 35 ns | 4KX8 | 3-STATE | 24b | 32 kb | 0.004A | 38535Q/M;38534H;883B | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 61.72mm | 15.24mm | 3.3mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||
| 7015L15J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 260mA | RAM, SDR, SRAM | 2010 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 9kB | 2 | 15 ns | 8KX9 | 3-STATE | 26b | 72 kb | 0.005A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||
| 7133SA45J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 290mA | RAM, SDR, SRAM | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 45 ns | 3-STATE | 22b | 32 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||
| 7164L55DB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 通孔 | CDIP | 28 | 90mA | RAM, SDR, SRAM - Asynchronous | Military grade | Bulk | 2011 | e0 | no | 活跃 | 1 (Unlimited) | 28 | Tin/Lead (Sn63Pb37) | 125°C | -55°C | 5V | DUAL | 240 | 1 | 2.54mm | 5V | MILITARY | Parallel | 8kB | 1 | 55 ns | 8KX8 | 3-STATE | 13b | 64 kb | 0.0002A | MIL-STD-883 Class B | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 37.2mm | 15.24mm | 1.65mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||
| 70V3579S6BCI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | YES | 256 | RAM, SDR, SRAM | Tape & Reel | 2014 | e0 | no | 活跃 | 4 (72 Hours) | 256 | Tin/Lead (Sn/Pb) | 85°C | -40°C | 3.3V | BOTTOM | BALL | 225 | 1 | INDUSTRIAL | Parallel | 128kB | 2 | 12 ns | 30b | 1.1 Mb | 3.45V | 3.15V | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||
| 70V7339S166BCGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 830mA | RAM, SDR, SRAM | Bulk | 2010 | e1 | yes | 活跃 | 3 (168 Hours) | 256 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | PIPELINED ARCHITECTURE OR FLOW-THROUGH | 3.3V | BOTTOM | BALL | 260 | 1 | 1mm | 166MHz | 30 | INDUSTRIAL | Parallel | 1.1MB | 2 | 20 ns | 3-STATE | 19b | 9 Mb | 0.04A | SERIAL | COMMON | Synchronous | 18b | 3.45V | 3.15V | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 |
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7134SA45CB
Integrated Device Technology (IDT)
分类:Memory
-
7006L55GB
Integrated Device Technology (IDT)
分类:Memory
-
7050L35PQF
Integrated Device Technology (IDT)
分类:Memory
-
7142SA35L48B
Integrated Device Technology (IDT)
分类:Memory
-
70V3589S166BFG8
Integrated Device Technology (IDT)
分类:Memory
-
7025L25GB
Integrated Device Technology (IDT)
分类:Memory
-
70V06L20JI
Integrated Device Technology (IDT)
分类:Memory
-
70T633S10BCGI
Integrated Device Technology (IDT)
分类:Memory
-
7132SA35L48B
Integrated Device Technology (IDT)
分类:Memory
-
7164S35TDB
Integrated Device Technology (IDT)
分类:Memory
-
7130LA35CB
Integrated Device Technology (IDT)
分类:Memory
-
70V06L35J
Integrated Device Technology (IDT)
分类:Memory
-
7143LA25G
Integrated Device Technology (IDT)
分类:Memory
-
7006L20JI8
Integrated Device Technology (IDT)
分类:Memory
-
7005L20G
Integrated Device Technology (IDT)
分类:Memory
-
7050L25G
Integrated Device Technology (IDT)
分类:Memory
-
7025S35FB
Integrated Device Technology (IDT)
分类:Memory
-
71V016SA10BFGI8
Integrated Device Technology (IDT)
分类:Memory
-
7025L70FB
Integrated Device Technology (IDT)
分类:Memory
-
7134LA35CB
Integrated Device Technology (IDT)
分类:Memory
-
7015L15J
Integrated Device Technology (IDT)
分类:Memory
-
7133SA45J8
Integrated Device Technology (IDT)
分类:Memory
-
7164L55DB
Integrated Device Technology (IDT)
分类:Memory
-
70V3579S6BCI8
Integrated Device Technology (IDT)
分类:Memory
-
70V7339S166BCGI
Integrated Device Technology (IDT)
分类:Memory