品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | Current - Supply (Nom) | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 最大电流源 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间(最大) | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 (最大值) | 电压 - 供电 (最小值) | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | |||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | 7005S25PFI | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 64-LQFP | 64-TQFP (14x14) | Volatile | -40°C ~ 85°C (TA) | Tray | -- | Obsolete | SRAM - Dual Port, Asynchronous | 4.5 V ~ 5.5 V | 64Kb (8K x 8) | 25ns | SRAM | Parallel | 25ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 71421LA55JI8 | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 52-LCC (J-Lead) | 52-PLCC (19.13x19.13) | Volatile | -40°C ~ 85°C (TA) | Tape & Reel (TR) | -- | Obsolete | SRAM - Dual Port, Asynchronous | 4.5 V ~ 5.5 V | 16Kb (2K x 8) | 55ns | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 7024S20PFI | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 100-LQFP | 100-TQFP (14x14) | Volatile | -40°C ~ 85°C (TA) | Tray | -- | Obsolete | SRAM - Dual Port, Asynchronous | 4.5 V ~ 5.5 V | 64Kb (4K x 16) | 20ns | SRAM | Parallel | 20ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 7130SA55PFI8 | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 64-LQFP | 64-TQFP (14x14) | Volatile | -40°C ~ 85°C (TA) | Tape & Reel (TR) | -- | Obsolete | SRAM - Dual Port, Asynchronous | 4.5 V ~ 5.5 V | 8Kb (1K x 8) | 55ns | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 70V9079L15PF8 | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 100-LQFP | 100-TQFP (14x14) | Volatile | 0°C ~ 70°C (TA) | Tape & Reel (TR) | -- | Obsolete | SRAM - Dual Port, Synchronous | 3 V ~ 3.6 V | 256Kb (32K x 8) | 15ns | SRAM | Parallel | -- | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 7026L55JI | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 84-LCC (J-Lead) | 84-PLCC (29.21x29.21) | Volatile | -40°C ~ 85°C (TA) | Tube | -- | Obsolete | SRAM - Dual Port, Asynchronous | 4.5 V ~ 5.5 V | 256Kb (16K x 16) | 55ns | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 7130LA100JI | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 52-LCC (J-Lead) | 52-PLCC (19.13x19.13) | Volatile | -40°C ~ 85°C (TA) | Tube | -- | Obsolete | SRAM - Dual Port, Asynchronous | 4.5 V ~ 5.5 V | 8Kb (1K x 8) | 100ns | SRAM | Parallel | 100ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 70V631S15PRFI | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 128-LQFP | 128-TQFP (14x20) | Volatile | -40°C ~ 85°C (TA) | Tray | -- | Obsolete | SRAM - Dual Port, Asynchronous | 3.15 V ~ 3.45 V | 4.5Mb (256K x 18) | 15ns | SRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT7164L45TDB | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 7006S55PFI | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 64-LQFP | 64-TQFP (14x14) | Volatile | -40°C ~ 85°C (TA) | Tray | -- | Obsolete | SRAM - Dual Port, Asynchronous | 4.5 V ~ 5.5 V | 128Kb (16K x 8) | 55ns | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 7130LA55JI | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 52-LCC (J-Lead) | 52-PLCC (19.13x19.13) | Volatile | -40°C ~ 85°C (TA) | Tube | -- | Obsolete | SRAM - Dual Port, Asynchronous | 4.5 V ~ 5.5 V | 8Kb (1K x 8) | 55ns | SRAM | Parallel | 55ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 7028L15PFI | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 100-LQFP | 100-TQFP (14x14) | Volatile | -40°C ~ 85°C (TA) | Tray | -- | Obsolete | SRAM - Dual Port, Asynchronous | 4.5 V ~ 5.5 V | 1Mb (64K x 16) | 15ns | SRAM | Parallel | 15ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IDT70825S35G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 84 | RAM | 2009 | e0 | 84 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | AUTOMATIC POWER-DOWN | 8542.32.00.41 | 5V | PERPENDICULAR | PIN/PEG | 未说明 | 1 | 2.54mm | not_compliant | 未说明 | 不合格 | 5V | COMMERCIAL | Parallel | ASYNCHRONOUS | 0.34mA | 8KX16 | 16 | 0.015A | 131072 bit | 35 ns | 5.5V | 4.5V | 5.207mm | 27.94mm | 27.94mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||
![]() | IDT70825S25G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 84 | 360mA | RAM | 2009 | e0 | 84 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | AUTOMATIC POWER-DOWN | 5V | PERPENDICULAR | PIN/PEG | 未说明 | 1 | not_compliant | 未说明 | 不合格 | 5V | COMMERCIAL | Parallel | 2 | 25 ns | 8KX16 | 16 | 26b | 128 kb | 0.015A | Asynchronous | 16b | 5.5V | 4.5V | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||
![]() | IDT70824S35G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 84 | RAM | 2009 | e0 | 84 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | 8542.32.00.41 | 5V | PERPENDICULAR | PIN/PEG | 未说明 | 1 | 2.54mm | not_compliant | 未说明 | 不合格 | 5V | COMMERCIAL | Parallel | ASYNCHRONOUS | 0.34mA | 4KX16 | 16 | 15A | 65536 bit | 35 ns | 5.5V | 4.5V | 5.207mm | 27.94mm | 27.94mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||
![]() | IDT70825L20G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 84 | RAM | 2009 | e0 | 84 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | AUTOMATIC POWER-DOWN | 8542.32.00.41 | 5V | PERPENDICULAR | PIN/PEG | 未说明 | 1 | 2.54mm | not_compliant | 未说明 | 不合格 | 5V | COMMERCIAL | Parallel | ASYNCHRONOUS | 0.33mA | 8KX16 | 16 | 0.0015A | 131072 bit | 20 ns | 5.5V | 4.5V | 5.207mm | 27.94mm | 27.94mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||
![]() | IDT71V016SA12YI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 44 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2007 | e0 | no | 3 (168 Hours) | 44 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 85°C | -40°C | ALSO OPERATES WITH 3V TO 3.6 V SUPPLY | 8542.32.00.41 | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 3.3V | INDUSTRIAL | Parallel | 0.16mA | 64KX16 | 3-STATE | 16 | 0.01A | 1048576 bit | 12 ns | COMMON | 3.15V | 3.6V | 3.15V | 3.683mm | 28.575mm | 10.16mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||
![]() | 7143LA35GB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 通孔 | 68 | 295mA | RAM, SRAM | Military grade | Bulk | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 68 | Tin/Lead (Sn/Pb) | 125°C | -55°C | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 20 | 5V | MILITARY | Parallel | 2 | 35 ns | 3-STATE | 22b | 32 kb | 0.004A | MIL-PRF-38535 | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||
![]() | 70V7319S166BF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 790mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | 0.8mm | 166MHz | COMMERCIAL | Parallel | 2 | 12 ns | 3-STATE | 18b | 4 Mb | 0.03A | COMMON | Synchronous | 18b | 3.45V | 3.15V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||
![]() | 7016S15J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 310mA | RAM, SDR, SRAM | 2009 | 活跃 | 70°C | 0°C | 5V | Parallel | 18kB | 2 | 15 ns | 28b | 144 kb | Asynchronous | 9b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | 71321LA20JG8 | Integrated Device Technology (IDT) | 数据表 | 10000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 200mA | RAM, SDR, SRAM | Tape & Reel | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 52 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP | 5V | QUAD | J BEND | 260 | 1 | 30 | 5V | COMMERCIAL | Parallel | 2kB | 2 | 20 ns | 3-STATE | 11b | 16 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||
![]() | 7005L35FB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | 68 | 250mA | RAM, SRAM | 2005 | 活跃 | 125°C | -55°C | 5V | Parallel | 2 | 35 ns | 26b | 64 kb | Asynchronous | 8b | 5.5V | 4.5V | 24mm | 24mm | 2mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 70V3399S166BFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | YES | 208 | 166MHz | RAM, SDR, SRAM | Tape & Reel | 2013 | e1 | yes | 3 (168 Hours) | 208 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | PIPELINED OR FLOW-THROUGH ARCHITECTURE | 3.3V | BOTTOM | BALL | 260 | 1 | 0.8mm | 166MHz | 30 | 500mA | COMMERCIAL | Parallel | 256kB | 2 | 3.6 ns | 3-STATE | 18 | 34b | 2.3 Mb | 0.03A | COMMON | 3.45V | 3.15V | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||
![]() | 70V3399S133BFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | YES | 208 | RAM, SRAM | Bulk | 2014 | e1 | yes | 3 (168 Hours) | 208 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | BOTTOM | BALL | 260 | 1 | 0.8mm | 133MHz | 30 | INDUSTRIAL | Parallel | 2 | 0.48mA | 3-STATE | 18 | 34b | 2.3 Mb | 0.04A | COMMON | 3.15V | 3.45V | 3.15V | 1.7mm | 15mm | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||
![]() | 70V3399S133BFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 208 | RAM, SRAM | Tape & Reel | 2014 | e1 | yes | 3 (168 Hours) | 208 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | PIPELINED OR FLOW-THROUGH ARCHITECTURE | 3.3V | BOTTOM | BALL | 260 | 1 | 0.8mm | 133MHz | 30 | INDUSTRIAL | Parallel | 2 | 0.48mA | 3-STATE | 18 | 34b | 2.3 Mb | 0.04A | COMMON | 3.15V | 3.45V | 3.15V | 无 | 符合RoHS标准 |
7005S25PFI
Integrated Device Technology
分类:Memory
71421LA55JI8
Integrated Device Technology
分类:Memory
7024S20PFI
Integrated Device Technology
分类:Memory
7130SA55PFI8
Integrated Device Technology
分类:Memory
70V9079L15PF8
Integrated Device Technology
分类:Memory
7026L55JI
Integrated Device Technology
分类:Memory
7130LA100JI
Integrated Device Technology
分类:Memory
70V631S15PRFI
Integrated Device Technology
分类:Memory
IDT7164L45TDB
Integrated Device Technology
分类:Memory
7006S55PFI
Integrated Device Technology
分类:Memory
7130LA55JI
Integrated Device Technology
分类:Memory
7028L15PFI
Integrated Device Technology
分类:Memory
IDT70825S35G
Integrated Device Technology (IDT)
分类:Memory
IDT70825S25G
Integrated Device Technology (IDT)
分类:Memory
IDT70824S35G
Integrated Device Technology (IDT)
分类:Memory
IDT70825L20G
Integrated Device Technology (IDT)
分类:Memory
IDT71V016SA12YI8
Integrated Device Technology (IDT)
分类:Memory
7143LA35GB
Integrated Device Technology (IDT)
分类:Memory
70V7319S166BF8
Integrated Device Technology (IDT)
分类:Memory
7016S15J8
Integrated Device Technology (IDT)
分类:Memory
71321LA20JG8
Integrated Device Technology (IDT)
分类:Memory
7005L35FB
Integrated Device Technology (IDT)
分类:Memory
70V3399S166BFG8
Integrated Device Technology (IDT)
分类:Memory
70V3399S133BFGI
Integrated Device Technology (IDT)
分类:Memory
70V3399S133BFGI8
Integrated Device Technology (IDT)
分类:Memory
