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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 7006L35J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 210mA | RAM, SDR, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 16kB | 2 | 35 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
| 70V07S55J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 140mA | RAM, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 2 | 55 ns | 3-STATE | 30b | 256 kb | 0.006A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
| 7133LA70G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | 68 | 250mA | RAM, SDR, SRAM | Bulk | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 70 ns | 3-STATE | 22b | 32 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
| 70V9279L7PRFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | LQFP | YES | 128 | RAM, SRAM | Tape & Reel | 2008 | e3 | yes | 活跃 | 3 (168 Hours) | 128 | Matte Tin (Sn) - annealed | 85°C | -40°C | 3.3V | QUAD | 鸥翼 | 260 | 0.5mm | 30 | INDUSTRIAL | Parallel | 2 | 83MHz | 0.335mA | 3-STATE | 15b | 512 kb | 0.015A | 7.5 ns | COMMON | 3V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||
| 70V05S35J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 180mA | RAM, SDR, SRAM | 2006 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 8kB | 2 | 35 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.005A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
| 7005S70GB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 68 | 300mA | RAM, SDR, SRAM | Bulk | 2012 | e0 | no | 活跃 | 1 (Unlimited) | 68 | Tin/Lead (Sn/Pb) | 125°C | -55°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 5V | MILITARY | Parallel | 8kB | 2 | 70 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.03A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
| 7143LA35GB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 通孔 | 68 | 295mA | RAM, SRAM | Military grade | Bulk | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 68 | Tin/Lead (Sn/Pb) | 125°C | -55°C | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 20 | 5V | MILITARY | Parallel | 2 | 35 ns | 3-STATE | 22b | 32 kb | 0.004A | MIL-PRF-38535 | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
| 70V7319S166BF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 790mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | 0.8mm | 166MHz | COMMERCIAL | Parallel | 2 | 12 ns | 3-STATE | 18b | 4 Mb | 0.03A | COMMON | Synchronous | 18b | 3.45V | 3.15V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
| 7133SA55FB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 68 | RAM, SRAM | Military grade | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 68 | Tin/Lead (Sn/Pb) | 125°C | -55°C | 5V | QUAD | FLAT | 240 | 1 | 5V | MILITARY | Parallel | 2 | 0.315mA | 3-STATE | 22b | 32 kb | 0.015A | MIL-PRF-38535 | 55 ns | COMMON | 2V | 24mm | 24mm | 2mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||
| 7134SA70L48B | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | BQFN | YES | 48 | RAM, SRAM | Military grade | Bulk | 1999 | e0 | no | 活跃 | 1 (Unlimited) | 48 | Tin/Lead (Sn/Pb) | 125°C | -55°C | AUTOMATIC POWER-DOWN | 5V | QUAD | 240 | 1 | 1mm | 5V | MILITARY | Parallel | 2 | 4KX8 | 3-STATE | 24b | 32 kb | 0.03A | 38535Q/M;38534H;883B | 70 ns | COMMON | 14.2mm | 14.22mm | 1.78mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||
| 7164L35TDB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | CDIP | 28 | 90mA | RAM, SRAM - Asynchronous | Bulk | 2011 | 活跃 | 125°C | -55°C | 5V | Parallel | 1 | 35 ns | 13b | 64 kb | Asynchronous | 8b | 5.5V | 4.5V | 37.72mm | 7.62mm | 3.56mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||
| 7133LA35J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 250mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 35 ns | 3-STATE | 22b | 32 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
 | IDT71V632S8PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TQFP | 100 | RAM, SRAM | e3 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 0.635mm | 不合格 | COMMERCIAL | Parallel | 1 | 60MHz | 0.24mA | 8 ns | 64KX32 | 3-STATE | 32 | 16b | 2 Mb | 0.009A | COMMON | Synchronous | 32b | 3.63V | 3.135V | 符合RoHS标准 | |||||||||||||||||||||||||||||||
| 7130LA35FB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 48 | 170mA | RAM, SRAM | Military grade | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 48 | Tin/Lead (Sn/Pb) | 125°C | -55°C | 5V | QUAD | FLAT | 240 | 1 | 5V | MILITARY | Parallel | 2 | 35 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.004A | MIL-PRF-38535 | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 19mm | 19mm | 2.2mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
| 7143SA90J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 280mA | RAM, SDR, SRAM | 2005 | 活跃 | 70°C | 0°C | 5V | Parallel | 4kB | 2 | 90 ns | 22b | 32 kb | Asynchronous | 16b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||
| 7133SA70J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 280mA | RAM, SDR, SRAM | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 70 ns | 3-STATE | 22b | 32 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
| IDT71V3577SA80BQ | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | RAM, SRAM | 2005 | e0 | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | not_compliant | 20 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 100MHz | 0.2mA | 128KX36 | 3-STATE | 36 | 0.03A | 4718592 bit | 8 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.2mm | 15mm | 13mm | Non-RoHS Compliant | ||||||||||||||||||||||
| 7052S30GB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 108 | RAM, SRAM | Bulk | 2001 | 活跃 | 125°C | -55°C | 5V | Parallel | 4 | 30 ns | 11b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 30.48mm | 30.48mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||
| 7024S70FB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | YES | 84 | Military grade | RAM, SRAM | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 84 | Tin/Lead (Sn/Pb) | 125°C | -55°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | FLAT | 240 | 1 | 5V | MILITARY | Parallel | 2 | 0.3mA | 4KX16 | 3-STATE | 24b | 64 kb | 0.03A | 38535Q/M;38534H;883B | 70 ns | COMMON | 3.556mm | 29.2mm | 29.21mm | 2.54mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
| 7015L25J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 220mA | RAM, SDR, SRAM | 2010 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 9kB | 2 | 25 ns | 8KX9 | 3-STATE | 26b | 72 kb | 0.005A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
| 71V016SA15BF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 48 | 130mA | RAM, SDR, SRAM - Asynchronous | 2011 | 活跃 | 70°C | 0°C | 3.3V | Parallel | 128kB | 1 | 15 ns | 16b | 1 Mb | Asynchronous | 16b | 3.6V | 3V | 7mm | 7mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||
| 71256L70TDB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | CDIP | NO | 28 | RAM, SRAM - Asynchronous | Military grade | 2011 | e0 | no | 活跃 | 1 (Unlimited) | 28 | Tin/Lead (Sn/Pb) | 125°C | -55°C | 5V | DUAL | THROUGH-HOLE | 240 | 1 | 2.54mm | 未说明 | 不合格 | 5V | MILITARY | Parallel | 1 | 32KX8 | 3-STATE | 15b | 256 kb | 0.0005A | MIL-STD-883 Class B | 70 ns | COMMON | 2V | 5.08mm | 37.72mm | 7.62mm | 3.56mm | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
| 7005L25GB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 68 | RAM, SDR, SRAM | Bulk | 2012 | 活跃 | 125°C | -55°C | 5V | Parallel | 8kB | 2 | 25 ns | 26b | 64 kb | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||||
| 7005L35FB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | 68 | 250mA | RAM, SRAM | 2005 | 活跃 | 125°C | -55°C | 5V | Parallel | 2 | 35 ns | 26b | 64 kb | Asynchronous | 8b | 5.5V | 4.5V | 24mm | 24mm | 2mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||
| 7007L20G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | 68 | 275mA | RAM, SDR, SRAM | Bulk | 2010 | 活跃 | 70°C | 0°C | 5V | Parallel | 32kB | 2 | 20 ns | 30b | 256 kb | Asynchronous | 8b | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 |
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7006L35J8
Integrated Device Technology (IDT)
分类:Memory
-
70V07S55J
Integrated Device Technology (IDT)
分类:Memory
-
7133LA70G
Integrated Device Technology (IDT)
分类:Memory
-
70V9279L7PRFGI8
Integrated Device Technology (IDT)
分类:Memory
-
70V05S35J8
Integrated Device Technology (IDT)
分类:Memory
-
7005S70GB
Integrated Device Technology (IDT)
分类:Memory
-
7143LA35GB
Integrated Device Technology (IDT)
分类:Memory
-
70V7319S166BF8
Integrated Device Technology (IDT)
分类:Memory
-
7133SA55FB
Integrated Device Technology (IDT)
分类:Memory
-
7134SA70L48B
Integrated Device Technology (IDT)
分类:Memory
-
7164L35TDB
Integrated Device Technology (IDT)
分类:Memory
-
7133LA35J8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V632S8PFG
Integrated Device Technology (IDT)
分类:Memory
-
7130LA35FB
Integrated Device Technology (IDT)
分类:Memory
-
7143SA90J8
Integrated Device Technology (IDT)
分类:Memory
-
7133SA70J8
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3577SA80BQ
Integrated Device Technology (IDT)
分类:Memory
-
7052S30GB
Integrated Device Technology (IDT)
分类:Memory
-
7024S70FB
Integrated Device Technology (IDT)
分类:Memory
-
7015L25J
Integrated Device Technology (IDT)
分类:Memory
-
71V016SA15BF8
Integrated Device Technology (IDT)
分类:Memory
-
71256L70TDB
Integrated Device Technology (IDT)
分类:Memory
-
7005L25GB
Integrated Device Technology (IDT)
分类:Memory
-
7005L35FB
Integrated Device Technology (IDT)
分类:Memory
-
7007L20G
Integrated Device Technology (IDT)
分类:Memory