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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 最大电流源 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | IDT71V3557S80BQI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 165 | RAM, SRAM | 2009 | e0 | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn63Pb37) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 8542.32.00.41 | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | not_compliant | 20 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 95MHz | 0.26mA | 128KX36 | 3-STATE | 36 | 0.045A | 4718592 bit | 8 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.2mm | 15mm | 13mm | Non-RoHS Compliant | ||||||||||||||||||||||||
| IDT70825L35G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 84 | RAM | 2009 | e0 | 84 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | AUTOMATIC POWER-DOWN | 8542.32.00.41 | 5V | PERPENDICULAR | PIN/PEG | 未说明 | 1 | 2.54mm | not_compliant | 未说明 | 不合格 | 5V | COMMERCIAL | Parallel | ASYNCHRONOUS | 0.29mA | 8KX16 | 16 | 0.0015A | 131072 bit | 35 ns | 5.5V | 4.5V | 5.207mm | 27.94mm | 27.94mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||
| IDT70P3337S233RMI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | FCBGA | YES | 576 | QDR, RAM, SRAM | 2006 | e1 | 576 | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 8542.32.00.41 | 1.8V | BOTTOM | BALL | 260 | 1 | 1mm | 233MHz | 40 | S-PBGA-B576 | 不合格 | INDUSTRIAL | Parallel | SYNCHRONOUS | 512KX18 | 18 | 9437184 bit | 0.45 ns | 1.9V | 1.7V | 2.55mm | 25mm | 25mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||
| IDT70P3337S250RM | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | FCBGA | YES | 576 | QDR, RAM, SRAM | 2006 | e1 | 576 | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 8542.32.00.41 | 1.8V | BOTTOM | BALL | 260 | 1 | 1mm | 250MHz | 40 | S-PBGA-B576 | 不合格 | COMMERCIAL | Parallel | SYNCHRONOUS | 512KX18 | 18 | 9437184 bit | 0.45 ns | 1.9V | 1.7V | 2.55mm | 25mm | 25mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||
| IDT70P3307S233RMI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | FCBGA | YES | 576 | QDR, RAM, SRAM | 2006 | e1 | 576 | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 8542.32.00.41 | 1.8V | BOTTOM | BALL | 260 | 1 | 1mm | 233MHz | 40 | S-PBGA-B576 | 不合格 | INDUSTRIAL | Parallel | SYNCHRONOUS | 1MX18 | 18 | 18874368 bit | 0.45 ns | 1.9V | 1.7V | 2.55mm | 25mm | 25mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||
| IDT70825S20G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | NO | 84 | RAM | 2009 | e0 | 84 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | AUTOMATIC POWER-DOWN | 8542.32.00.41 | 5V | PERPENDICULAR | PIN/PEG | 未说明 | 1 | 2.54mm | not_compliant | 未说明 | 不合格 | 5V | COMMERCIAL | Parallel | ASYNCHRONOUS | 0.38mA | 8KX16 | 16 | 0.015A | 131072 bit | 20 ns | 5.5V | 4.5V | 5.207mm | 27.94mm | 27.94mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||
| IDT70825L25G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TO-10 | NO | 84 | RAM | 2009 | e0 | 84 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | AUTOMATIC POWER-DOWN | 8542.32.00.41 | 5V | PERPENDICULAR | PIN/PEG | 未说明 | 1 | 2.54mm | not_compliant | 未说明 | 不合格 | 5V | COMMERCIAL | Parallel | ASYNCHRONOUS | 0.31mA | 8KX16 | 16 | 0.0015A | 131072 bit | 25 ns | 5.5V | 4.5V | 5.207mm | 27.94mm | 27.94mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||
| 70V05L15J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | PLCC | YES | 68 | RAM, SDR, SRAM | 2006 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 8kB | 2 | 0.185mA | 15 ns | 8KX8 | 3-STATE | 26b | 64 kb | COMMON | 3V | 3.6V | 3V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||
 | 71V256S12YG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 28 | RAM, SRAM - Asynchronous | Tape & Reel | 70°C | 0°C | 3.3V | Parallel | 1 | 15b | 256 kb | 无 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 7005L55JI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 250mA | RAM, SDR, SRAM | Tape & Reel | 2012 | 活跃 | 85°C | -40°C | 5V | Parallel | 8kB | 2 | 55 ns | 26b | 64 kb | Asynchronous | 8b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||
| 7008S35G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | 84 | 295mA | RAM, SDR, SRAM | Bulk | 2008 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | 锡铅 | 70°C | 0°C | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 5V | COMMERCIAL | Parallel | 64kB | 2 | 35 ns | 64KX8 | 3-STATE | 32b | 512 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 27.94mm | 27.94mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
| 7016L15J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 260mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | SEMAPHORE; INTERRUPT FLAG; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 18kB | 2 | 15 ns | 16KX9 | 3-STATE | 14b | 144 kb | 0.005A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
| 7007S20G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | 68 | 315mA | RAM, SDR, SRAM | Bulk | 2010 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 5V | COMMERCIAL | Parallel | 32kB | 2 | 20 ns | 3-STATE | 30b | 256 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
| 7005S15J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 310mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 15 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
| 71V016SA20BF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 48 | 120mA | RAM, SDR, SRAM - Asynchronous | 2011 | 活跃 | 70°C | 0°C | 3.3V | Parallel | 128kB | 1 | 20 ns | 16b | 1 Mb | Asynchronous | 16b | 3.6V | 3V | 7mm | 7mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||||
| 7142SA55C | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | DIP | 48 | 155mA | RAM, SDR, SRAM | Bulk | 2007 | 活跃 | 70°C | 0°C | 5V | Parallel | 2kB | 2 | 55 ns | 22b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 61.72mm | 15.24mm | 3.3mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||
| 7143LA55J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 250mA | RAM, SDR, SRAM | 2013 | 活跃 | 70°C | 0°C | 5V | Parallel | 4kB | 2 | 55 ns | 22b | 32 kb | Asynchronous | 16b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||
| 6116LA150TDB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 通孔 | CDIP | 24 | 85mA | RAM, SDR, SRAM - Asynchronous | Military grade | Bulk | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 24 | Tin/Lead (Sn/Pb) | 125°C | -55°C | 5V | DUAL | 240 | 1 | 2.54mm | 85mA | 5V | MILITARY | Parallel | 2kB | 1 | 150 ns | 2KX8 | 3-STATE | 11b | 16 kb | 0.0002A | MIL-STD-883 Class B | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 5.08mm | 32.51mm | 7.62mm | 3.56mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
| 7133SA35FB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | YES | 68 | RAM, SRAM | Military grade | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 68 | Tin/Lead (Sn/Pb) | 125°C | -55°C | 5V | QUAD | FLAT | 240 | 1 | 5V | MILITARY | Parallel | 2 | 3-STATE | 22b | 32 kb | 0.015A | MIL-PRF-38535 | 35 ns | COMMON | 2V | 24mm | 24mm | 2mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||
| 7143LA90J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 250mA | RAM, SDR, SRAM | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 90 ns | 3-STATE | 22b | 32 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
| 7142LA35C | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | DIP | 48 | 120mA | RAM, SDR, SRAM | Bulk | 2007 | 活跃 | 70°C | 0°C | 5V | Parallel | 2kB | 2 | 35 ns | 22b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 61.72mm | 15.24mm | 3.3mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||||||
| 70V7339S166BFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 790mA | RAM, SRAM | Tape & Reel | 2010 | e1 | yes | 活跃 | 3 (168 Hours) | 208 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | BOTTOM | BALL | 260 | 1 | 0.8mm | 166MHz | 30 | COMMERCIAL | Parallel | 2 | 12 ns | 3-STATE | 19b | 9 Mb | 0.03A | COMMON | Synchronous | 18b | 3.45V | 3.15V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
| 7016S35J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 250mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | SEMAPHORE; INTERRUPT FLAG; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 18kB | 2 | 35 ns | 16KX9 | 3-STATE | 14b | 144 kb | 0.015A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
| 7005L20J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 240mA | RAM, SDR, SRAM | 2012 | 活跃 | 70°C | 0°C | 5V | Parallel | 8kB | 2 | 20 ns | 26b | 64 kb | Asynchronous | 8b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||||||||
| 7026L35G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | 84 | 255mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 5V | COMMERCIAL | Parallel | 32kB | 2 | 35 ns | 16KX16 | 3-STATE | 14b | 256 kb | 0.005A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 27.94mm | 27.94mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 |
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IDT71V3557S80BQI
Integrated Device Technology (IDT)
分类:Memory
-
IDT70825L35G
Integrated Device Technology (IDT)
分类:Memory
-
IDT70P3337S233RMI
Integrated Device Technology (IDT)
分类:Memory
-
IDT70P3337S250RM
Integrated Device Technology (IDT)
分类:Memory
-
IDT70P3307S233RMI
Integrated Device Technology (IDT)
分类:Memory
-
IDT70825S20G
Integrated Device Technology (IDT)
分类:Memory
-
IDT70825L25G
Integrated Device Technology (IDT)
分类:Memory
-
70V05L15J8
Integrated Device Technology (IDT)
分类:Memory
-
71V256S12YG8
Integrated Device Technology (IDT)
分类:Memory
-
7005L55JI8
Integrated Device Technology (IDT)
分类:Memory
-
7008S35G
Integrated Device Technology (IDT)
分类:Memory
-
7016L15J
Integrated Device Technology (IDT)
分类:Memory
-
7007S20G
Integrated Device Technology (IDT)
分类:Memory
-
7005S15J
Integrated Device Technology (IDT)
分类:Memory
-
71V016SA20BF8
Integrated Device Technology (IDT)
分类:Memory
-
7142SA55C
Integrated Device Technology (IDT)
分类:Memory
-
7143LA55J8
Integrated Device Technology (IDT)
分类:Memory
-
6116LA150TDB
Integrated Device Technology (IDT)
分类:Memory
-
7133SA35FB
Integrated Device Technology (IDT)
分类:Memory
-
7143LA90J
Integrated Device Technology (IDT)
分类:Memory
-
7142LA35C
Integrated Device Technology (IDT)
分类:Memory
-
70V7339S166BFG8
Integrated Device Technology (IDT)
分类:Memory
-
7016S35J
Integrated Device Technology (IDT)
分类:Memory
-
7005L20J
Integrated Device Technology (IDT)
分类:Memory
-
7026L35G
Integrated Device Technology (IDT)
分类:Memory