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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 筛选水平 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 70V25S55PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 180mA | RAM, SDR, SRAM | 2008 | 活跃 | 70°C | 0°C | 3.3V | Parallel | 16kB | 2 | 55 ns | 26b | 128 kb | Asynchronous | 16b | 3.6V | 3V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||
| 70V05L35J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 155mA | RAM, SDR, SRAM | 2006 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 8kB | 2 | 35 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.005A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||
| 7006S55JI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 300mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | INDUSTRIAL | Parallel | 16kB | 2 | 55 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.03A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||
 | 70V25L25PFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 180mA | RAM, SDR, SRAM | 2008 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | EAR99 | Matte Tin (Sn) - annealed | 85°C | -40°C | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.5mm | 30 | INDUSTRIAL | Parallel | 16kB | 2 | 25 ns | 8KX16 | 3-STATE | 26b | 128 kb | 0.005A | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||
| 7026L35G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | 84 | 255mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 5V | COMMERCIAL | Parallel | 32kB | 2 | 35 ns | 16KX16 | 3-STATE | 14b | 256 kb | 0.005A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 27.94mm | 27.94mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||
| 7016S35J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 250mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | SEMAPHORE; INTERRUPT FLAG; AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 18kB | 2 | 35 ns | 16KX9 | 3-STATE | 14b | 144 kb | 0.015A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||
| 7133LA90GB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 通孔 | 68 | 280mA | RAM, SRAM | Military grade | Bulk | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 68 | Tin/Lead (Sn/Pb) | 125°C | -55°C | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 20 | 5V | MILITARY | Parallel | 2 | 90 ns | 3-STATE | 22b | 32 kb | 0.004A | MIL-PRF-38535 | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 29.46mm | 29.46mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||
| 7134SA70CB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | DIP | 48 | 270mA | RAM, SRAM | Military grade | Bulk | 2005 | e0 | no | 活跃 | 1 (Unlimited) | 48 | Tin/Lead (Sn/Pb) | 125°C | -55°C | AUTOMATIC POWER-DOWN | 5V | DUAL | 240 | 1 | 5V | MILITARY | Parallel | 2 | 70 ns | 4KX8 | 3-STATE | 24b | 32 kb | 0.03A | 38535Q/M;38534H;883B | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 61.72mm | 15.24mm | 3.3mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||
| 7005L55JI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 250mA | RAM, SDR, SRAM | Tape & Reel | 2012 | 活跃 | 85°C | -40°C | 5V | Parallel | 8kB | 2 | 55 ns | 26b | 64 kb | Asynchronous | 8b | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||
| 7164S70TDB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | CDIP | NO | 28 | RAM, SRAM - Asynchronous | Military grade | Bulk | 2011 | e0 | no | 活跃 | 1 (Unlimited) | 28 | Tin/Lead (Sn/Pb) | 125°C | -55°C | 5V | DUAL | THROUGH-HOLE | 240 | 1 | 2.54mm | 5V | MILITARY | Parallel | 1 | 8KX8 | 3-STATE | 13b | 64 kb | 0.02A | MIL-STD-883 Class B | 70 ns | COMMON | 37.72mm | 7.62mm | 3.56mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
| 70T3319S133BFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | YES | 208 | RAM, SRAM | Tape & Reel | 2005 | e1 | yes | 活跃 | 3 (168 Hours) | 208 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 2.5V | BOTTOM | BALL | 260 | 1 | 0.8mm | 133MHz | 30 | INDUSTRIAL | Parallel | 2 | 0.45mA | 3-STATE | 18b | 4 Mb | 15 ns | COMMON | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||
| 70P244L40BYGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TFBGA | 81 | RAM, SDR, SRAM | Tape & Reel | 2009 | 85°C | -40°C | 1.8V | Parallel | 8kB | 2 | 40 ns | 24b | 64 kb | 1.9V | 1.7V | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||
| 70P244L55BYGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TFBGA | YES | 81 | RAM, SDR, SRAM | Bulk | 2009 | e1 | yes | Discontinued | 3 (168 Hours) | 81 | EAR99 | 锡银铜 | 85°C | -40°C | 1.8V | BOTTOM | BALL | 260 | 1 | 30 | INDUSTRIAL | Parallel | 8kB | 2 | 55 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.000006A | COMMON | 1.9V | 1.7V | 5mm | 5mm | 1mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||
| 5962-8855204XA | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | CDIP | 28 | 115mA | RAM, SDR, SRAM - Asynchronous | 2011 | 活跃 | 125°C | -55°C | 5V | Parallel | 32kB | 1 | 45 ns | 15b | 256 kb | Asynchronous | 8b | 5.5V | 4.5V | 37.2mm | 15.24mm | 1.65mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||
| 70P244L55BYGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TFBGA | 81 | RAM, SDR, SRAM | Tape & Reel | 2009 | 85°C | -40°C | 1.8V | Parallel | 8kB | 2 | 55 ns | 24b | 64 kb | 1.9V | 1.7V | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||
| 70P264L55BYGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TFBGA | YES | 81 | RAM, SDR, SRAM | Bulk | 2009 | e1 | yes | Discontinued | 3 (168 Hours) | 81 | EAR99 | 锡银铜 | 85°C | -40°C | 1.8V | BOTTOM | BALL | 260 | 1 | 30 | INDUSTRIAL | Parallel | 32kB | 2 | 55 ns | 16KX16 | 3-STATE | 28b | 256 kb | 0.000006A | COMMON | 1.9V | 1.7V | 5mm | 5mm | 1mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||
| 70P264L55BYGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TFBGA | YES | 81 | RAM, SDR, SRAM | Tape & Reel | 2009 | e1 | yes | 3 (168 Hours) | 81 | EAR99 | 锡银铜 | 85°C | -40°C | 1.8V | BOTTOM | BALL | 260 | 1 | 0.5mm | 30 | INDUSTRIAL | Parallel | 32kB | 2 | 55 ns | 16KX16 | 3-STATE | 16 | 28b | 256 kb | 0.000006A | COMMON | 1.9V | 1.7V | 无 | 符合RoHS标准 | |||||||||||||||||||||
| 70P269L65BYGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TFBGA | YES | 100 | RAM, SDR, SRAM | Tape & Reel | 2008 | e1 | yes | 3 (168 Hours) | 100 | EAR99 | 锡银铜 | 85°C | -40°C | 1.8V | BOTTOM | BALL | 260 | 1 | 30 | INDUSTRIAL | Parallel | 32kB | 2 | 65 ns | 16KX16 | 16 | 28b | 256 kb | 3V | 1.8V | 无 | 符合RoHS标准 | |||||||||||||||||||||||||
| 70P259L90BYGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TFBGA | YES | 100 | RAM, SDR, SRAM | Tape & Reel | 2008 | e1 | yes | 3 (168 Hours) | 100 | EAR99 | 锡银铜 | 85°C | -40°C | 1.8V | BOTTOM | BALL | 260 | 1 | 30 | INDUSTRIAL | Parallel | 16kB | 2 | 90 ns | 8KX16 | 16 | 26b | 128 kb | 3V | 1.8V | 无 | 符合RoHS标准 | |||||||||||||||||||||||||
| 70P264L40BYGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TFBGA | YES | 81 | RAM, SDR, SRAM | Bulk | 2009 | e1 | yes | Discontinued | 3 (168 Hours) | 81 | EAR99 | 锡银铜 | 85°C | -40°C | 1.8V | BOTTOM | BALL | 260 | 1 | 30 | INDUSTRIAL | Parallel | 32kB | 2 | 0.04mA | 40 ns | 16KX16 | 3-STATE | 28b | 256 kb | 0.000006A | COMMON | 1.9V | 1.7V | 5mm | 5mm | 1mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||
| 70P265L65BYGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TFBGA | YES | 100 | RAM, SDR, SRAM | Bulk | 2011 | e1 | yes | Discontinued | 3 (168 Hours) | 100 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 1.8V | BOTTOM | BALL | 260 | 1 | 0.5mm | 30 | INDUSTRIAL | Parallel | 32kB | 2 | 0.07mA | 65 ns | 16KX16 | 3-STATE | 28b | 256 kb | 0.000008A | COMMON | 3V | 1.8V | 6mm | 6mm | 1mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||
| 7015L20J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 240mA | RAM, SDR, SRAM | 2010 | e0 | no | 活跃 | 1 (Unlimited) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 9kB | 2 | 20 ns | 8KX9 | 3-STATE | 26b | 72 kb | 0.005A | COMMON | Asynchronous | 9b | 5.5V | 4.5V | 4.57mm | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||
| 71256S35TDB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | CDIP | 28 | RAM, SDR, SRAM - Asynchronous | Bulk | 2011 | 活跃 | 125°C | -55°C | 5V | Parallel | 32kB | 1 | 35 ns | 15b | 256 kb | 5.5V | 4.5V | 37.72mm | 7.62mm | 3.56mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||||
| 7024S35FB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | YES | 84 | RAM, SRAM | Military grade | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 84 | Tin/Lead (Sn/Pb) | 125°C | -55°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | FLAT | 240 | 1 | 5V | MILITARY | Parallel | 2 | 0.3mA | 4KX16 | 3-STATE | 24b | 64 kb | 0.03A | 38535Q/M;38534H;883B | 35 ns | COMMON | 3.556mm | 29.2mm | 29.21mm | 2.54mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
| 7008S25G | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | 84 | 305mA | RAM, SDR, SRAM | 2010 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | 锡铅 | 70°C | 0°C | 5V | PERPENDICULAR | PIN/PEG | 240 | 1 | 5V | COMMERCIAL | Parallel | 64kB | 2 | 25 ns | 64KX8 | 3-STATE | 32b | 512 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 27.94mm | 27.94mm | 3.68mm | 无 | 符合RoHS标准 | 含铅 |
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70V25S55PF
Integrated Device Technology (IDT)
分类:Memory
-
70V05L35J8
Integrated Device Technology (IDT)
分类:Memory
-
7006S55JI8
Integrated Device Technology (IDT)
分类:Memory
-
70V25L25PFGI8
Integrated Device Technology (IDT)
分类:Memory
-
7026L35G
Integrated Device Technology (IDT)
分类:Memory
-
7016S35J
Integrated Device Technology (IDT)
分类:Memory
-
7133LA90GB
Integrated Device Technology (IDT)
分类:Memory
-
7134SA70CB
Integrated Device Technology (IDT)
分类:Memory
-
7005L55JI8
Integrated Device Technology (IDT)
分类:Memory
-
7164S70TDB
Integrated Device Technology (IDT)
分类:Memory
-
70T3319S133BFGI8
Integrated Device Technology (IDT)
分类:Memory
-
70P244L40BYGI8
Integrated Device Technology (IDT)
分类:Memory
-
70P244L55BYGI
Integrated Device Technology (IDT)
分类:Memory
-
5962-8855204XA
Integrated Device Technology (IDT)
分类:Memory
-
70P244L55BYGI8
Integrated Device Technology (IDT)
分类:Memory
-
70P264L55BYGI
Integrated Device Technology (IDT)
分类:Memory
-
70P264L55BYGI8
Integrated Device Technology (IDT)
分类:Memory
-
70P269L65BYGI8
Integrated Device Technology (IDT)
分类:Memory
-
70P259L90BYGI8
Integrated Device Technology (IDT)
分类:Memory
-
70P264L40BYGI
Integrated Device Technology (IDT)
分类:Memory
-
70P265L65BYGI
Integrated Device Technology (IDT)
分类:Memory
-
7015L20J8
Integrated Device Technology (IDT)
分类:Memory
-
71256S35TDB
Integrated Device Technology (IDT)
分类:Memory
-
7024S35FB
Integrated Device Technology (IDT)
分类:Memory
-
7008S25G
Integrated Device Technology (IDT)
分类:Memory