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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | Current - Supply (Nom) | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 最大电流源 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 组织结构 | 输出特性 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 组织的记忆 | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | |||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 71V3556S166PFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 166MHz | 360mA | RAM, SDR, SRAM | 2006 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 85°C | -40°C | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 166MHz | 30 | INDUSTRIAL | Parallel | 512kB | 1 | 3.5 ns | 3-STATE | 17b | 4.5 Mb | 0.045A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||
 | 71V016SA12YG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 44 | RAM, SDR, SRAM - Asynchronous | 150mA | Tape & Reel | 2011 | e3 | yes | 活跃 | 3 (168 Hours) | 44 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | DUAL | J BEND | 260 | 1 | COMMERCIAL | Parallel | 128kB | 1 | 12 ns | 3-STATE | 16b | 1 Mb | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 3.683mm | 28.6mm | 10.2mm | 2.9mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||
 | 71V65803S100PFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | TQFP | 100 | 100MHz | 270mA | RAM, SDR, SRAM | 2005 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 85°C | -40°C | 爆破计数器 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 100MHz | 30 | INDUSTRIAL | Parallel | 1.1MB | 1 | 5 ns | 3-STATE | 19b | 9 Mb | 0.06A | COMMON | Synchronous | 18b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||
 | 71V67603S150BGGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | BGA | YES | 119 | RAM, SDR, SRAM | 150MHz | 2009 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 流水线结构 | 3.3V | BOTTOM | BALL | 260 | 1 | 150MHz | 30 | 325mA | INDUSTRIAL | Parallel | 1.1MB | 1 | 3.8 ns | 256KX36 | 3-STATE | 18b | 9 Mb | 0.07A | COMMON | 3.465V | 3.135V | 2.15mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||
 | 71V65803S133BQI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 165 | 133MHz | 320mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 165 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 流水线结构 | 3.3V | BOTTOM | BALL | 225 | 1 | 133MHz | 20 | INDUSTRIAL | Parallel | 1.1MB | 1 | 7.5 ns | 3-STATE | 19b | 9 Mb | 0.06A | COMMON | Synchronous | 18b | 3.465V | 3.135V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||
 | 71124S15YGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 32 | RAM, SDR, SRAM - Asynchronous | 155mA | Tape & Reel | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 32 | Matte Tin (Sn) - annealed | 85°C | -40°C | 5V | DUAL | J BEND | 260 | 1 | 5V | INDUSTRIAL | Parallel | 128kB | 1 | 15 ns | 3-STATE | 17b | 1 Mb | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 3.683mm | 20.9mm | 10.2mm | 2.2mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||
 | 71V416L15BEG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | TFBGA | YES | 48 | RAM, SDR, SRAM - Asynchronous | 2012 | e1 | yes | 活跃 | 3 (168 Hours) | 48 | 锡银铜 | 70°C | 0°C | 3.3V | BOTTOM | BALL | 260 | 1 | 0.75mm | 未说明 | 不合格 | COMMERCIAL | Parallel | 512kB | 1 | 15 ns | 3-STATE | 18b | 4 Mb | COMMON | 3V | 3.6V | 3V | 9mm | 9mm | 1.2mm | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||
 | 7164L20YGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 28 | RAM, SDR, SRAM - Asynchronous | 100mA | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) - annealed | 85°C | -40°C | 5V | DUAL | J BEND | 260 | 1 | 5V | INDUSTRIAL | Parallel | 8kB | 1 | 20 ns | 8KX8 | 3-STATE | 13b | 64 kb | 0.00006A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 3.556mm | 17.9mm | 7.6mm | 2.67mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||
 | 71V67903S75PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | TQFP | 100 | 117MHz | 265mA | RAM, SDR, SRAM | 2004 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 117MHz | 30 | COMMERCIAL | Parallel | 1.1MB | 1 | 7.5 ns | 3-STATE | 19b | 9 Mb | 0.05A | COMMON | Synchronous | 18b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||
 | 71V30S55TFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 135mA | RAM, SDR, SRAM | Bulk | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 64 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | QUAD | FLAT | 260 | 1 | 0.5mm | 30 | COMMERCIAL | Parallel | 1kB | 2 | 55 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.005A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 1.6mm | 10mm | 10mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||
 | 71V016SA15PHG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TSOP | 44 | 130mA | RAM, SDR, SRAM - Asynchronous | 2011 | e3 | yes | 活跃 | 3 (168 Hours) | 44 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | DUAL | 鸥翼 | 260 | 1 | 0.8mm | 30 | COMMERCIAL | Parallel | 128kB | 1 | 15 ns | 3-STATE | 16b | 1 Mb | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 18.41mm | 10.16mm | 1mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||
 | 71V124SA12YGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 32 | RAM, SDR, SRAM - Asynchronous | 140mA | 2013 | e3 | yes | 活跃 | 3 (168 Hours) | 32 | Matte Tin (Sn) - annealed | 85°C | -40°C | 3.3V | DUAL | J BEND | 260 | 1 | 140mA | INDUSTRIAL | Parallel | 128kB | 1 | 12 ns | 3-STATE | 17b | 1 Mb | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 3.683mm | 20.9mm | 10.2mm | 2.2mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||
 | 71V65603S100PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | TQFP | 100 | 100MHz | 250mA | RAM, SDR, SRAM | 2005 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 爆破计数器 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 100MHz | 30 | 不合格 | COMMERCIAL | Parallel | 1.1MB | 1 | 10 ns | 256KX36 | 3-STATE | 18b | 9 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||
 | 71V416S15PH | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44-TSOP II | Bulk | 71V416S | 活跃 | IDT, Integrated Device Technology Inc | Volatile | 0°C ~ 70°C (TA) | - | SRAM - Asynchronous | 3V ~ 3.6V | 4Mbit | 15 ns | SRAM | Parallel | 15ns | 256K x 16 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 71V2556SA133BGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 133MHz | 310mA | RAM, SDR, SRAM | 2011 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 流水线结构 | 3.3V | BOTTOM | BALL | 225 | 1 | 133MHz | 20 | INDUSTRIAL | Parallel | 512kB | 1 | 4.2 ns | 3-STATE | 17b | 4.5 Mb | 0.045A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||
 | 71V3577S75BQ | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 11 Weeks | 表面贴装 | FBGA | 165 | 255mA | RAM, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 165 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | 117MHz | 20 | COMMERCIAL | Parallel | 1 | 7.5 ns | 3-STATE | 17b | 4.5 Mb | 0.03A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||
 | 7130LA20JG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 200mA | RAM, SDR, SRAM | Tape & Reel | 2013 | e3 | yes | 活跃 | 3 (168 Hours) | 52 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | 5V | QUAD | J BEND | 260 | 1 | 5V | COMMERCIAL | Parallel | 1kB | 2 | 20 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 4.57mm | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||
 | 71V65603S100PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | TQFP | 100 | RAM, SDR, SRAM | 250mA | 100MHz | Tape & Reel | 2007 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 100MHz | 30 | COMMERCIAL | Parallel | 1.1MB | 1 | 10 ns | 256KX36 | 3-STATE | 18b | 9 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||
 | 71016S20PHG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TSOP | 44 | 170mA | RAM, SDR, SRAM - Asynchronous | 2007 | e3 | yes | 活跃 | 3 (168 Hours) | 44 | Matte Tin (Sn) - annealed | 70°C | 0°C | 5V | DUAL | 鸥翼 | 260 | 1 | 0.8mm | 30 | 5V | COMMERCIAL | Parallel | 128kB | 1 | 20 ns | 3-STATE | 16b | 1 Mb | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 18.41mm | 10.16mm | 1mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||
 | 71256L35YGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 28 | RAM, SDR, SRAM - Asynchronous | 115mA | Tape & Reel | 2011 | e3 | yes | 活跃 | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) | 85°C | -40°C | 5V | DUAL | J BEND | 260 | 1 | 5V | INDUSTRIAL | Parallel | 32kB | 1 | 35 ns | 32KX8 | 3-STATE | 15b | 256 kb | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 3.556mm | 17.9mm | 7.6mm | 2.67mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||
 | 6116LA20TPGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | PDIP | 24 | 95mA | RAM, SDR, SRAM - Asynchronous | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | 24 | EAR99 | 哑光锡 | 85°C | -40°C | 5V | DUAL | 260 | 1 | 2.54mm | 5V | INDUSTRIAL | Parallel | 2kB | 1 | 20 ns | 2KX8 | 3-STATE | 11b | 16 kb | 0.00003A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 31.75mm | 7.62mm | 3.3mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||
 | 70T653MS10BCG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | YES | 256 | RAM, SDR, SRAM | 2009 | e1 | yes | 活跃 | 3 (168 Hours) | 256 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 2.5V | BOTTOM | BALL | 260 | 1 | 1mm | 30 | COMMERCIAL | Parallel | 2.3MB | 2 | 0.81mA | 10 ns | 3-STATE | 38b | 18 Mb | COMMON | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||
 | 71V65803S133BQG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | YES | 165 | 133MHz | RAM, SDR, SRAM | 2005 | e1 | yes | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 爆破计数器 | 3.3V | BOTTOM | BALL | 260 | 1 | 133MHz | 30 | COMMERCIAL | Parallel | 1.1MB | 1 | 0.3mA | 7.5 ns | 3-STATE | 19b | 9 Mb | 0.04A | COMMON | 3.465V | 3.135V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||
 | 70V657S10BFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | RAM, SDR, SRAM | 500mA | 2009 | e1 | yes | 活跃 | 3 (168 Hours) | 208 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 260 | 1 | 0.8mm | 30 | COMMERCIAL | Parallel | 128kB | 2 | 10 ns | 3-STATE | 30b | 1.1 Mb | 0.015A | COMMON | Asynchronous | 36b | 3.45V | 3.15V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||
 | 71V124SA12PHG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | SOIC | 32 | 130mA | RAM, SDR, SRAM - Asynchronous | 2013 | e3 | yes | 活跃 | 3 (168 Hours) | 32 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | DUAL | 鸥翼 | 260 | 1 | 30 | 不合格 | COMMERCIAL | Parallel | 128kB | 1 | 12 ns | 3-STATE | 17b | 1 Mb | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 20.95mm | 10.16mm | 1mm | 符合RoHS标准 | 无铅 |
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71V3556S166PFGI
Integrated Device Technology (IDT)
分类:Memory
-
71V016SA12YG8
Integrated Device Technology (IDT)
分类:Memory
-
71V65803S100PFGI
Integrated Device Technology (IDT)
分类:Memory
-
71V67603S150BGGI
Integrated Device Technology (IDT)
分类:Memory
-
71V65803S133BQI
Integrated Device Technology (IDT)
分类:Memory
-
71124S15YGI8
Integrated Device Technology (IDT)
分类:Memory
-
71V416L15BEG8
Integrated Device Technology (IDT)
分类:Memory
-
7164L20YGI
Integrated Device Technology (IDT)
分类:Memory
-
71V67903S75PFG
Integrated Device Technology (IDT)
分类:Memory
-
71V30S55TFG
Integrated Device Technology (IDT)
分类:Memory
-
71V016SA15PHG
Integrated Device Technology (IDT)
分类:Memory
-
71V124SA12YGI
Integrated Device Technology (IDT)
分类:Memory
-
71V65603S100PFG
Integrated Device Technology (IDT)
分类:Memory
-
71V416S15PH
Integrated Device Technology
分类:Memory
-
71V2556SA133BGI
Integrated Device Technology (IDT)
分类:Memory
-
71V3577S75BQ
Integrated Device Technology (IDT)
分类:Memory
-
7130LA20JG8
Integrated Device Technology (IDT)
分类:Memory
-
71V65603S100PFG8
Integrated Device Technology (IDT)
分类:Memory
-
71016S20PHG
Integrated Device Technology (IDT)
分类:Memory
-
71256L35YGI8
Integrated Device Technology (IDT)
分类:Memory
-
6116LA20TPGI
Integrated Device Technology (IDT)
分类:Memory
-
70T653MS10BCG
Integrated Device Technology (IDT)
分类:Memory
-
71V65803S133BQG
Integrated Device Technology (IDT)
分类:Memory
-
70V657S10BFG
Integrated Device Technology (IDT)
分类:Memory
-
71V124SA12PHG8
Integrated Device Technology (IDT)
分类:Memory