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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 最大电流源 | 资历状况 | 电源 | 温度等级 | 界面 | 电路数量 | 内存大小 | 端口的数量 | 电源电流-最大值 | 访问时间 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 输出启用 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | IDT71024S12Y | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 32 | RAM, SRAM - Asynchronous | 1997 | e0 | no | 3 (168 Hours) | 32 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 0.16mA | 128KX8 | 3-STATE | 8 | 0.01A | 1048576 bit | 12 ns | COMMON | 4.5V | 5.5V | 4.5V | YES | 3.683mm | 20.96mm | 10.16mm | Non-RoHS Compliant | |||||||||||||||||||||||
 | 71016S15PHG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TSOP | 44 | 180mA | RAM, SDR, SRAM - Asynchronous | 2004 | e3 | yes | 活跃 | 3 (168 Hours) | 44 | Matte Tin (Sn) - annealed | 70°C | 0°C | 5V | DUAL | 鸥翼 | 260 | 1 | 0.8mm | 30 | 5V | COMMERCIAL | Parallel | 128kB | 1 | 15 ns | 3-STATE | 16b | 1 Mb | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 18.41mm | 10.16mm | 1mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||
 | 71024S20TYG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 32 | 140mA | RAM, SDR, SRAM - Asynchronous | Tape & Reel | 2013 | e3 | yes | 活跃 | 3 (168 Hours) | 32 | Matte Tin (Sn) - annealed | 70°C | 0°C | 5V | DUAL | J BEND | 260 | 1 | 5V | COMMERCIAL | Parallel | 128kB | 1 | 20 ns | 3-STATE | 17b | 1 Mb | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 3.76mm | 21.95mm | 7.6mm | 2.67mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
 | 71V124SA10PHG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | SOIC | 32 | 145mA | RAM, SDR, SRAM - Asynchronous | Tape & Reel | 2013 | e3 | yes | 活跃 | 3 (168 Hours) | 32 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | DUAL | 鸥翼 | 260 | 1 | 30 | COMMERCIAL | Parallel | 128kB | 1 | 10 ns | 3-STATE | 17b | 1 Mb | COMMON | Asynchronous | 8b | 3.6V | 3.15V | 20.95mm | 10.16mm | 1mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
 | 6116SA15SOG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | SOIC | 24 | 105mA | CMOS, RAM, SRAM - Asynchronous | Tape & Reel | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | 24 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | 5V | DUAL | 鸥翼 | 260 | 1 | 30 | 5V | COMMERCIAL | Parallel | 2kB | 1 | 15 ns | 2KX8 | 3-STATE | 11b | 16 kb | 0.002A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 15.4mm | 7.6mm | 2.34mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||
 | 71V256SA12PZG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TSOP | 28 | 90mA | RAM, SDR, SRAM - Asynchronous | 2006 | e3 | yes | 活跃 | 3 (168 Hours) | 28 | EAR99 | 哑光锡 | 70°C | 0°C | 3.3V | DUAL | 鸥翼 | 260 | 1 | 0.55mm | 30 | 90mA | COMMERCIAL | Parallel | 32kB | 1 | 12 ns | 32KX8 | 3-STATE | 15b | 256 kb | 0.002A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 8mm | 11.8mm | 1mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||
 | 71V256SA12PZG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TSOP | 28 | 90mA | RAM, SDR, SRAM - Asynchronous | Tape & Reel | 2012 | e3 | yes | 活跃 | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | DUAL | 鸥翼 | 260 | 1 | 0.55mm | 30 | COMMERCIAL | Parallel | 32kB | 1 | 12 ns | 32KX8 | 3-STATE | 15b | 256 kb | 0.002A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 8mm | 11.8mm | 1mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||
 | 70T3519S133BCI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 450mA | 133MHz | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 2.5V | BOTTOM | BALL | 225 | 1 | 1mm | 133MHz | 20 | INDUSTRIAL | Parallel | 1.1MB | 2 | 4.2 ns | 3-STATE | 36b | 9 Mb | COMMON | Synchronous | 36b | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | 71V2546S100PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 250mA | 100MHz | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 100MHz | 30 | COMMERCIAL | Parallel | 512kB | 1 | 5 ns | 3-STATE | 17b | 4.5 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||
 | 7025L20PFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 320mA | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | EAR99 | Matte Tin (Sn) - annealed | 85°C | -40°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | 5V | QUAD | 鸥翼 | 1 | 0.5mm | INDUSTRIAL | Parallel | 16kB | 2 | 20 ns | 8KX16 | 3-STATE | 26b | 128 kb | 0.004A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | YES | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||
 | 6116LA25SOG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | SOIC | 24 | 95mA | RAM, SDR, SRAM - Asynchronous | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | 24 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | 5V | DUAL | 鸥翼 | 260 | 1 | 30 | 5V | COMMERCIAL | Parallel | 2kB | 1 | 25 ns | 2KX8 | 3-STATE | 11b | 16 kb | 0.00002A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 15.4mm | 7.6mm | 2.34mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||
 | 7132LA55PDGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | DIP | 48 | 140mA | RAM, SDR, SRAM | Bulk | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 48 | EAR99 | 哑光锡 | 85°C | -40°C | 5V | DUAL | 260 | 1 | INDUSTRIAL | Parallel | 2kB | 2 | 55 ns | 22b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 61.7mm | 15.24mm | 3.8mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||
 | 71V321L25TFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 130mA | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 64 | EAR99 | Matte Tin (Sn) - annealed | 85°C | -40°C | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.5mm | 30 | INDUSTRIAL | Parallel | 2kB | 2 | 25 ns | 3-STATE | 22b | 16 kb | 0.004A | COMMON | Asynchronous | 8b | 2V | 3.6V | 3V | 1.6mm | 10mm | 10mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||
 | 71V65703S75PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | TQFP | 100 | 275mA | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | FLOW-THROUGH | 3.3V | QUAD | 鸥翼 | 260 | 1 | 100MHz | 30 | COMMERCIAL | Parallel | 1.1MB | 1 | 7.5 ns | 256KX36 | 18b | 9 Mb | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
 | 71V67903S75PFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | TQFP | 100 | 285mA | RAM, SDR, SRAM | 117MHz | 2004 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 117MHz | 30 | INDUSTRIAL | Parallel | 1.1MB | 1 | 7.5 ns | 3-STATE | 19b | 9 Mb | 0.07A | COMMON | Synchronous | 18b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||
 | 71T75602S166PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | TQFP | 100 | 245mA | 166MHz | RAM, SDR, SRAM | 2012 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 流水线结构 | 2.5V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 166MHz | 30 | COMMERCIAL | Parallel | 2.3MB | 1 | 3.5 ns | 3-STATE | 19b | 18 Mb | 0.04A | COMMON | Synchronous | 36b | 2.38V | 2.625V | 2.375V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||
 | 71V124SA10PHGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | SOIC | 32 | 150mA | RAM, SDR, SRAM - Asynchronous | 2013 | e3 | yes | 活跃 | 3 (168 Hours) | 32 | Matte Tin (Sn) - annealed | 85°C | -40°C | 3.3V | DUAL | 鸥翼 | 260 | 1 | 30 | 不合格 | INDUSTRIAL | Parallel | 128kB | 1 | 10 ns | 3-STATE | 17b | 1 Mb | COMMON | Asynchronous | 8b | 3.6V | 3.15V | 20.95mm | 10.16mm | 1mm | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||
 | 71V25761S200PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | TQFP | YES | 100 | 200MHz | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 200MHz | 30 | COMMERCIAL | Parallel | 512kB | 1 | 0.36mA | 3.1 ns | 3-STATE | 17b | 4.5 Mb | 0.03A | COMMON | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||
 | 6116LA20SOGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | SOIC | 24 | 95mA | RAM, SDR, SRAM - Asynchronous | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | 24 | EAR99 | Matte Tin (Sn) - annealed | 85°C | -40°C | 5V | DUAL | 鸥翼 | 260 | 1 | 30 | 5V | INDUSTRIAL | Parallel | 2kB | 1 | 20 ns | 2KX8 | 3-STATE | 11b | 16 kb | 0.00003A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 15.4mm | 7.6mm | 2.34mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||
 | 71256SA12TPG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | PDIP | 28 | 160mA | RAM, SDR, SRAM - Asynchronous | Bulk | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 28 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | 5V | DUAL | 260 | 1 | 2.54mm | 5V | COMMERCIAL | Parallel | 32kB | 1 | 12 ns | 32KX8 | 3-STATE | 15b | 256 kb | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 4.572mm | 34.3mm | 7.62mm | 3.3mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||
 | 71342LA25PFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | YES | 64 | RAM, SRAM | Bulk | 2009 | 64 | EAR99 | 85°C | -40°C | 5V | QUAD | 鸥翼 | 1 | 0.8mm | 5V | INDUSTRIAL | Parallel | 2 | 4kB | 2 | 25 ns | 8b | 4KX8 | 3-STATE | 8 | 24b | 32 kb | 0.0015A | COMMON | 2V | 5.5V | 4.5V | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||
 | 70T3509MS133BPGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 14 Weeks | 表面贴装 | BGA | 256 | 1.37A | 133MHz | RAM, SDR, SRAM | Bulk | 2009 | e1 | yes | 活跃 | 3 (168 Hours) | 256 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 2.5V | BOTTOM | BALL | 260 | 1 | 1mm | 133MHz | 30 | INDUSTRIAL | Parallel | 4.5MB | 2 | 4.2 ns | 1MX36 | 3-STATE | 40b | 36 Mb | 0.08A | COMMON | Synchronous | 36b | 2.6V | 2.4V | 1.7mm | 17mm | 17mm | 1.76mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||
 | 71024S12TYG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 32 | 160mA | RAM, SDR, SRAM - Asynchronous | 2013 | e3 | yes | 活跃 | 3 (168 Hours) | 32 | Matte Tin (Sn) - annealed | 70°C | 0°C | 5V | DUAL | J BEND | 260 | 1 | 5V | COMMERCIAL | Parallel | 128kB | 1 | 12 ns | 3-STATE | 17b | 1 Mb | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 3.76mm | 21.95mm | 7.6mm | 2.67mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||
 | 71V016SA15PHGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TSOP | 44 | 130mA | RAM, SDR, SRAM - Asynchronous | Tape & Reel | 2011 | e3 | yes | 活跃 | 3 (168 Hours) | 44 | Matte Tin (Sn) - annealed | 85°C | -40°C | 3.3V | DUAL | 鸥翼 | 260 | 1 | 0.8mm | 30 | INDUSTRIAL | Parallel | 128kB | 1 | 15 ns | 3-STATE | 16b | 1 Mb | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 18.41mm | 10.16mm | 1mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||
 | 71V3556S166PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 350mA | 166MHz | RAM, SDR, SRAM | 2006 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 166MHz | 30 | COMMERCIAL | Parallel | 512kB | 1 | 3.5 ns | 3-STATE | 17b | 4.5 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 |
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IDT71024S12Y
Integrated Device Technology (IDT)
分类:Memory
-
71016S15PHG
Integrated Device Technology (IDT)
分类:Memory
-
71024S20TYG8
Integrated Device Technology (IDT)
分类:Memory
-
71V124SA10PHG8
Integrated Device Technology (IDT)
分类:Memory
-
6116SA15SOG8
Integrated Device Technology (IDT)
分类:Memory
-
71V256SA12PZG
Integrated Device Technology (IDT)
分类:Memory
-
71V256SA12PZG8
Integrated Device Technology (IDT)
分类:Memory
-
70T3519S133BCI
Integrated Device Technology (IDT)
分类:Memory
-
71V2546S100PFG
Integrated Device Technology (IDT)
分类:Memory
-
7025L20PFGI
Integrated Device Technology (IDT)
分类:Memory
-
6116LA25SOG8
Integrated Device Technology (IDT)
分类:Memory
-
7132LA55PDGI
Integrated Device Technology (IDT)
分类:Memory
-
71V321L25TFGI
Integrated Device Technology (IDT)
分类:Memory
-
71V65703S75PFG
Integrated Device Technology (IDT)
分类:Memory
-
71V67903S75PFGI
Integrated Device Technology (IDT)
分类:Memory
-
71T75602S166PFG
Integrated Device Technology (IDT)
分类:Memory
-
71V124SA10PHGI
Integrated Device Technology (IDT)
分类:Memory
-
71V25761S200PFG
Integrated Device Technology (IDT)
分类:Memory
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6116LA20SOGI
Integrated Device Technology (IDT)
分类:Memory
-
71256SA12TPG
Integrated Device Technology (IDT)
分类:Memory
-
71342LA25PFGI
Integrated Device Technology (IDT)
分类:Memory
-
70T3509MS133BPGI
Integrated Device Technology (IDT)
分类:Memory
-
71024S12TYG8
Integrated Device Technology (IDT)
分类:Memory
-
71V016SA15PHGI8
Integrated Device Technology (IDT)
分类:Memory
-
71V3556S166PFG
Integrated Device Technology (IDT)
分类:Memory