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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 最大电流源 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 访问时间 | 组织结构 | 输出特性 | 地址总线宽度 | 密度 | 待机电流-最大值 | 筛选水平 | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | |||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 71V3558SA166BQG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 11 Weeks | 表面贴装 | 165 | 350mA | 166MHz | RAM, SDR, SRAM | 2013 | e1 | yes | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 260 | 1 | 166MHz | 30 | COMMERCIAL | Parallel | 512kB | 1 | 3.5 ns | 3-STATE | 18b | 4.5 Mb | 0.04A | COMMON | Synchronous | 18b | 3.465V | 3.135V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||
 | 70V25S25PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 190mA | RAM, SDR, SRAM | 2001 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 16kB | 2 | 25 ns | 8KX16 | 3-STATE | 26b | 128 kb | 0.005A | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||
 | 71016S15PHG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TSOP | 44 | 180mA | RAM, SDR, SRAM - Asynchronous | Tape & Reel | 2007 | e3 | yes | 活跃 | 3 (168 Hours) | 44 | Matte Tin (Sn) - annealed | 70°C | 0°C | 5V | DUAL | 鸥翼 | 260 | 1 | 0.8mm | 30 | 5V | COMMERCIAL | Parallel | 128kB | 1 | 15 ns | 3-STATE | 16b | 1 Mb | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 18.41mm | 10.16mm | 1mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||
 | 71V35761S166BG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | BGA | 119 | 320mA | 166MHz | RAM, SDR, SRAM | 2009 | e0 | no | Discontinued | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 3.3V | BOTTOM | BALL | 225 | 1 | 166MHz | 20 | 不合格 | COMMERCIAL | Parallel | 512kB | 1 | 3.5 ns | 3-STATE | 17b | 4.5 Mb | 0.03A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 符合RoHS标准 | 含铅 | |||||||||||||||
 | 7024S55PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 250mA | RAM, SDR, SRAM | 2000 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 55 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.015A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||
 | 71V416L15PHG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TSOP | 44 | 160mA | RAM, SDR, SRAM - Asynchronous | 2005 | e3 | yes | 活跃 | 3 (168 Hours) | 44 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | DUAL | 鸥翼 | 260 | 1 | 0.8mm | 30 | COMMERCIAL | Parallel | 512kB | 1 | 15 ns | 3-STATE | 18b | 4 Mb | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 18.41mm | 10.16mm | 1mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||
 | 6116SA45TDB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | CDIP | NO | 24 | RAM, SDR, SRAM - Asynchronous | Military grade | Bulk | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 24 | Tin/Lead (Sn/Pb) | 125°C | -55°C | 5V | DUAL | THROUGH-HOLE | 240 | 1 | 2.54mm | 5V | MILITARY | Parallel | 2kB | 1 | 45 ns | 2KX8 | 3-STATE | 11b | 16 kb | MIL-STD-883 Class B | COMMON | 5.5V | 4.5V | 5.08mm | 32.51mm | 7.62mm | 3.56mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||
 | 7024L20PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | YES | 100 | RAM, SDR, SRAM | 2000 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 20 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.0015A | COMMON | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||
 | 71342SA35J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 260mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 35 ns | 4KX8 | 3-STATE | 24b | 32 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 4.57mm | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||
 | 6116SA15SOG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | SOIC | 24 | 105mA | RAM, SDR, SRAM - Asynchronous | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | 24 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | 5V | DUAL | 鸥翼 | 260 | 1 | 30 | 5V | COMMERCIAL | Parallel | 2kB | 1 | 15 ns | 2KX8 | 3-STATE | 11b | 16 kb | 0.002A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 15.4mm | 7.6mm | 2.34mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||
 | 70T659S10BFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 445mA | RAM, SDR, SRAM | Bulk | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 2.5V | BOTTOM | BALL | 225 | 1 | 0.8mm | INDUSTRIAL | Parallel | 512kB | 2 | 10 ns | 3-STATE | 17b | 4.5 Mb | COMMON | Asynchronous | 36b | 2.6V | 2.4V | 1.5mm | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
 | 71V65903S80BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 250mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | 95MHz | 20 | 250mA | COMMERCIAL | Parallel | 1.1MB | 1 | 8 ns | 3-STATE | 19b | 9 Mb | 0.04A | COMMON | Synchronous | 18b | 3.465V | 3.135V | 2.15mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||
 | 7130SA55JI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 190mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 5V | QUAD | J BEND | 225 | 1 | 5V | INDUSTRIAL | Parallel | 1kB | 2 | 55 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.03A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 4.57mm | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||
 | 6116SA25TPG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | PDIP | 24 | 100mA | RAM, SDR, SRAM - Asynchronous | Bulk | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | 24 | EAR99 | 哑光锡 | 70°C | 0°C | 5V | DUAL | 260 | 1 | 2.54mm | 5V | COMMERCIAL | Parallel | 2kB | 1 | 25 ns | 2KX8 | 3-STATE | 11b | 16 kb | 0.002A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 31.75mm | 7.62mm | 3.3mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||
 | 71V016SA10BF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 48 | 160mA | RAM, SDR, SRAM - Asynchronous | 2011 | 活跃 | 70°C | 0°C | 3.3V | Parallel | 128kB | 1 | 10 ns | 16b | 1 Mb | Asynchronous | 16b | 3.6V | 3.15V | 7mm | 7mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||||
 | 71256SA15PZG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TSOP | 28 | 150mA | RAM, SDR, SRAM - Asynchronous | 2011 | e3 | yes | 活跃 | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | 5V | DUAL | 鸥翼 | 260 | 1 | 0.55mm | 30 | 5V | COMMERCIAL | Parallel | 32kB | 1 | 15 ns | 32KX8 | 3-STATE | 15b | 256 kb | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 8mm | 11.8mm | 1mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||
 | 7024L25J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 220mA | RAM, SDR, SRAM | 2000 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 25 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 4.57mm | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||
 | 71V67903S80BQI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 165 | 230mA | 100MHz | RAM, SDR, SRAM | 2004 | e0 | no | 活跃 | 3 (168 Hours) | 165 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | 100MHz | 20 | INDUSTRIAL | Parallel | 1.1MB | 1 | 8 ns | 3-STATE | 19b | 9 Mb | 0.07A | COMMON | Synchronous | 18b | 3.465V | 3.135V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||
 | 7024S35PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | YES | 100 | RAM, SDR, SRAM | 2000 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 35 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.015A | COMMON | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||
 | 6116LA120TDB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 通孔 | CDIP | 24 | 85mA | RAM, SDR, SRAM - Asynchronous | Military grade | Bulk | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 24 | Tin/Lead (Sn/Pb) | 125°C | -55°C | 5V | DUAL | 240 | 1 | 2.54mm | 5V | MILITARY | Parallel | 2kB | 1 | 120 ns | 2KX8 | 3-STATE | 11b | 16 kb | 0.0003A | MIL-STD-883 Class B | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 5.08mm | 32.51mm | 7.62mm | 3.56mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||
 | 71V65603S150BG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 325mA | RAM, SDR, SRAM | 150MHz | 2007 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 3.3V | BOTTOM | BALL | 225 | 1 | 150MHz | 20 | COMMERCIAL | Parallel | 1.1MB | 1 | 6.7 ns | 256KX36 | 3-STATE | 18b | 9 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||
 | 70V05S15PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 215mA | RAM, SDR, SRAM | 2006 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | COMMERCIAL | Parallel | 8kB | 2 | 15 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.005A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||
 | 7132LA25JI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 220mA | RAM, SDR, SRAM | 2007 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 5V | QUAD | J BEND | 225 | 1 | 5V | INDUSTRIAL | Parallel | 2kB | 2 | 25 ns | 3-STATE | 22b | 16 kb | 0.004A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 4.57mm | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||
 | 7025L55PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 210mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 16kB | 2 | 55 ns | 8KX16 | 3-STATE | 26b | 128 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||
 | 70T3719MS133BBG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 14 Weeks | 表面贴装 | BGA | 324 | 740mA | 133MHz | RAM, SDR, SRAM | Bulk | 2010 | e1 | yes | 活跃 | 3 (168 Hours) | 324 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | PIPELINED OR FLOW-THROUGH ARCHITECTURE | 2.5V | BOTTOM | BALL | 260 | 1 | 1mm | 133MHz | 30 | COMMERCIAL | Parallel | 2.3MB | 2 | 4.2 ns | 3-STATE | 36b | 18 Mb | COMMON | Synchronous | 72b | 2.6V | 2.4V | 19mm | 19mm | 1.76mm | 无 | 符合RoHS标准 | 无铅 |
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71V3558SA166BQG
Integrated Device Technology (IDT)
分类:Memory
-
70V25S25PF
Integrated Device Technology (IDT)
分类:Memory
-
71016S15PHG8
Integrated Device Technology (IDT)
分类:Memory
-
71V35761S166BG
Integrated Device Technology (IDT)
分类:Memory
-
7024S55PF
Integrated Device Technology (IDT)
分类:Memory
-
71V416L15PHG8
Integrated Device Technology (IDT)
分类:Memory
-
6116SA45TDB
Integrated Device Technology (IDT)
分类:Memory
-
7024L20PF
Integrated Device Technology (IDT)
分类:Memory
-
71342SA35J
Integrated Device Technology (IDT)
分类:Memory
-
6116SA15SOG
Integrated Device Technology (IDT)
分类:Memory
-
70T659S10BFI
Integrated Device Technology (IDT)
分类:Memory
-
71V65903S80BG8
Integrated Device Technology (IDT)
分类:Memory
-
7130SA55JI
Integrated Device Technology (IDT)
分类:Memory
-
6116SA25TPG
Integrated Device Technology (IDT)
分类:Memory
-
71V016SA10BF8
Integrated Device Technology (IDT)
分类:Memory
-
71256SA15PZG
Integrated Device Technology (IDT)
分类:Memory
-
7024L25J
Integrated Device Technology (IDT)
分类:Memory
-
71V67903S80BQI
Integrated Device Technology (IDT)
分类:Memory
-
7024S35PF
Integrated Device Technology (IDT)
分类:Memory
-
6116LA120TDB
Integrated Device Technology (IDT)
分类:Memory
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71V65603S150BG
Integrated Device Technology (IDT)
分类:Memory
-
70V05S15PF
Integrated Device Technology (IDT)
分类:Memory
-
7132LA25JI
Integrated Device Technology (IDT)
分类:Memory
-
7025L55PF
Integrated Device Technology (IDT)
分类:Memory
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70T3719MS133BBG
Integrated Device Technology (IDT)
分类:Memory