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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 访问时间 | 组织结构 | 输出特性 | 地址总线宽度 | 密度 | 待机电流-最大值 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 70T3589S166BF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 450mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 2.5V | BOTTOM | BALL | 225 | 1 | 0.8mm | 166MHz | 20 | COMMERCIAL | Parallel | 2 | 12 ns | 64KX36 | 3-STATE | 32b | 2.3 Mb | 0.015A | COMMON | Synchronous | 36b | 2.6V | 2.4V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||
 | 71T75802S100BGGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | BGA | YES | 119 | RAM, SRAM | Tape & Reel | 2012 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 流水线结构 | 2.5V | BOTTOM | BALL | 260 | 1 | 100MHz | INDUSTRIAL | Parallel | 1 | 3-STATE | 20b | 18 Mb | 0.06A | 5 ns | COMMON | 2.38V | 2.625V | 2.375V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||
 | 70125L25J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | PLCC | YES | 52 | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 2.3kB | 2 | 25 ns | 3-STATE | 22b | 18 kb | 0.015A | COMMON | 2V | 5.5V | 4.5V | 4.57mm | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||
 | 71016S20YG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 44 | 170mA | RAM, SDR, SRAM - Asynchronous | Tape & Reel | 2004 | e3 | yes | 活跃 | 3 (168 Hours) | 44 | Matte Tin (Sn) - annealed | 70°C | 0°C | 5V | DUAL | J BEND | 260 | 1 | 5V | COMMERCIAL | Parallel | 128kB | 1 | 20 ns | 3-STATE | 16b | 1 Mb | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 3.683mm | 28.6mm | 10.2mm | 2.9mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||
 | 71V65803S133PFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | TQFP | 100 | 320mA | 133MHz | RAM, SDR, SRAM | 2005 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 85°C | -40°C | 爆破计数器 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 133MHz | 30 | INDUSTRIAL | Parallel | 1.1MB | 1 | 4.2 ns | 3-STATE | 19b | 9 Mb | 0.06A | COMMON | Synchronous | 18b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||
 | 70V28L20PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 205mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 128kB | 2 | 20 ns | 64KX16 | 3-STATE | 32b | 1 Mb | 0.003A | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||
 | 71V30L55TF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 105mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 240 | 0.5mm | COMMERCIAL | Parallel | 1kB | 2 | 55 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.003A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 10mm | 10mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||
 | 7164S25YG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 28 | 90mA | RAM, SDR, SRAM - Asynchronous | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | 5V | DUAL | J BEND | 260 | 1 | 5V | COMMERCIAL | Parallel | 8kB | 1 | 25 ns | 8KX8 | 3-STATE | 13b | 64 kb | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 3.556mm | 17.9mm | 7.6mm | 2.67mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||
 | 71V2546S150PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 325mA | 150MHz | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 150MHz | 30 | COMMERCIAL | Parallel | 512kB | 1 | 3.8 ns | 3-STATE | 17b | 4.5 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||
 | 7164S25TPG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | PDIP | 28 | 90mA | RAM, SDR, SRAM - Asynchronous | Bulk | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 28 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | 5V | DUAL | 260 | 1 | 2.54mm | 5V | COMMERCIAL | Parallel | 8kB | 1 | 25 ns | 8KX8 | 3-STATE | 13b | 64 kb | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 4.572mm | 34.3mm | 7.62mm | 3.3mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||
 | 71V65703S75BQG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | YES | 165 | RAM, SRAM | 2009 | e1 | yes | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | FLOW-THROUGH | 3.3V | BOTTOM | BALL | 260 | 1 | 30 | COMMERCIAL | Parallel | 1 | 256KX36 | 18b | 9 Mb | 7.5 ns | 3.465V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||
 | 7027L20PFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 335mA | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 85°C | -40°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE | 5V | QUAD | 鸥翼 | 260 | 1 | 0.5mm | 30 | 5V | INDUSTRIAL | Parallel | 64kB | 2 | 20 ns | 3-STATE | 15b | 512 kb | 0.01A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||
 | 71V67803S166BG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 340mA | RAM, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 3.3V | BOTTOM | BALL | 225 | 1 | 166MHz | 20 | COMMERCIAL | Parallel | 1 | 3.5 ns | 3-STATE | 19b | 9 Mb | 0.05A | COMMON | Synchronous | 18b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||
 | 71V3558S100PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 250mA | RAM, SDR, SRAM | 100MHz | 2013 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 100MHz | 30 | COMMERCIAL | Parallel | 512kB | 1 | 5 ns | 3-STATE | 18b | 4.5 Mb | 0.04A | COMMON | Synchronous | 18b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||
 | 71V3559S85BG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 225mA | 100MHz | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 225 | 91MHz | COMMERCIAL | Parallel | 512kB | 1 | 8.5 ns | 3-STATE | 18b | 4.5 Mb | 0.04A | COMMON | Synchronous | 18b | 3.465V | 3.135V | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||
 | 70V3389S5BCI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 415mA | RAM, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | 100MHz | INDUSTRIAL | Parallel | 2 | 5 ns | 64KX18 | 3-STATE | 16b | 1.1 Mb | 0.03A | COMMON | Synchronous | 18b | 3.45V | 3.15V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||
 | 71V67703S85BGG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 190mA | RAM, SRAM | 2009 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 3.3V | BOTTOM | BALL | 260 | 1 | 87MHz | 30 | COMMERCIAL | Parallel | 1 | 8.5 ns | 256KX36 | 3-STATE | 18b | 9 Mb | 0.05A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||
 | 70V3569S5BC | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 360mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | 100MHz | COMMERCIAL | Parallel | 72kB | 2 | 10 ns | 16KX36 | 3-STATE | 28b | 576 kb | 0.015A | COMMON | Synchronous | 36b | 3.45V | 3.15V | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||
 | 71V35761SA183BGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 350mA | 183MHz | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 流水线结构 | 3.3V | BOTTOM | BALL | 225 | 1 | 183MHz | 20 | INDUSTRIAL | Parallel | 512kB | 1 | 3.3 ns | 3-STATE | 17b | 4.5 Mb | 0.035A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||
 | 7007S20PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 80 | 315mA | RAM, SDR, SRAM | 2010 | e0 | no | 活跃 | 3 (168 Hours) | 80 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | 20 | 5V | COMMERCIAL | Parallel | 32kB | 2 | 20 ns | 3-STATE | 30b | 256 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||
 | 71V65603S133BQ | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 165 | 300mA | 133MHz | RAM, SDR, SRAM | 2007 | e0 | no | 活跃 | 3 (168 Hours) | 165 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 爆破计数器 | 3.3V | BOTTOM | BALL | 225 | 1 | 133MHz | 20 | COMMERCIAL | Parallel | 1.1MB | 1 | 4.2 ns | 256KX36 | 3-STATE | 18b | 9 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||
 | 7025L35J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 210mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 16kB | 2 | 35 ns | 8KX16 | 3-STATE | 26b | 128 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 4.57mm | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||
 | 70T3599S166BC8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 450mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 2.5V | BOTTOM | BALL | 225 | 1 | 1mm | 166MHz | 20 | COMMERCIAL | Parallel | 2 | 12 ns | 3-STATE | 34b | 4.5 Mb | 0.015A | COMMON | Synchronous | 36b | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||
 | 71V632S7PFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 160mA | 66MHz | RAM, SDR, SRAM | 2015 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 85°C | -40°C | ALSO REQUIRES 3.3V I/O SUPPLY | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 66MHz | 30 | INDUSTRIAL | Parallel | 256kB | 1 | 7 ns | 64KX32 | 3-STATE | 16b | 2 Mb | COMMON | Synchronous | 32b | 3.63V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||
 | 70V3579S5BCI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 415mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | 100MHz | INDUSTRIAL | Parallel | 2 | 5 ns | 3-STATE | 30b | 1.1 Mb | COMMON | Synchronous | 36b | 3.45V | 3.15V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 |
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70T3589S166BF8
Integrated Device Technology (IDT)
分类:Memory
-
71T75802S100BGGI8
Integrated Device Technology (IDT)
分类:Memory
-
70125L25J
Integrated Device Technology (IDT)
分类:Memory
-
71016S20YG8
Integrated Device Technology (IDT)
分类:Memory
-
71V65803S133PFGI
Integrated Device Technology (IDT)
分类:Memory
-
70V28L20PF
Integrated Device Technology (IDT)
分类:Memory
-
71V30L55TF
Integrated Device Technology (IDT)
分类:Memory
-
7164S25YG
Integrated Device Technology (IDT)
分类:Memory
-
71V2546S150PFG
Integrated Device Technology (IDT)
分类:Memory
-
7164S25TPG
Integrated Device Technology (IDT)
分类:Memory
-
71V65703S75BQG
Integrated Device Technology (IDT)
分类:Memory
-
7027L20PFGI8
Integrated Device Technology (IDT)
分类:Memory
-
71V67803S166BG
Integrated Device Technology (IDT)
分类:Memory
-
71V3558S100PFG
Integrated Device Technology (IDT)
分类:Memory
-
71V3559S85BG
Integrated Device Technology (IDT)
分类:Memory
-
70V3389S5BCI
Integrated Device Technology (IDT)
分类:Memory
-
71V67703S85BGG
Integrated Device Technology (IDT)
分类:Memory
-
70V3569S5BC
Integrated Device Technology (IDT)
分类:Memory
-
71V35761SA183BGI8
Integrated Device Technology (IDT)
分类:Memory
-
7007S20PF
Integrated Device Technology (IDT)
分类:Memory
-
71V65603S133BQ
Integrated Device Technology (IDT)
分类:Memory
-
7025L35J
Integrated Device Technology (IDT)
分类:Memory
-
70T3599S166BC8
Integrated Device Technology (IDT)
分类:Memory
-
71V632S7PFGI
Integrated Device Technology (IDT)
分类:Memory
-
70V3579S5BCI8
Integrated Device Technology (IDT)
分类:Memory