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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 最大电流源 | 资历状况 | 电源 | 温度等级 | 电压 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 输出启用 | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 70V3379S4BCG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 256 | 460mA | RAM, SRAM | 2009 | e1 | yes | 活跃 | 3 (168 Hours) | 256 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE | 3.3V | BOTTOM | BALL | 260 | 1 | 1mm | 133MHz | 30 | COMMERCIAL | Parallel | 2 | 4.2 ns | 3-STATE | 15b | 576 kb | 0.015A | COMMON | Synchronous | 18b | 3.45V | 3.15V | 1.7mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
 | 70V25L25PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 180mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | INDUSTRIAL | Parallel | 16kB | 2 | 25 ns | 8KX16 | 3-STATE | 26b | 128 kb | 0.005A | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||
 | 7005S55PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 250mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 55 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | 70T633S10BCI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 445mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 2.5V | BOTTOM | BALL | 225 | 1 | 1mm | 20 | INDUSTRIAL | Parallel | 1.1MB | 2 | 10 ns | 3-STATE | 38b | 9 Mb | COMMON | Asynchronous | 18b | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||
 | IDT71016S20PH | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | TSOP | 44 | 170mA | RAM, SRAM - Asynchronous | Rail/Tube | 2010 | e0 | no | 3 (168 Hours) | 44 | 70°C | 0°C | 5V | DUAL | 鸥翼 | 225 | 1 | 0.8mm | not_compliant | 20 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 20 ns | 3-STATE | 16 | 16b | 1 Mb | COMMON | Asynchronous | 16b | 5.5V | 4.5V | YES | Non-RoHS Compliant | |||||||||||||||||||||||||||||
 | 70T651S10BCI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 445mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 2.5V | BOTTOM | BALL | 225 | 1 | 1mm | 20 | INDUSTRIAL | Parallel | 2 | 10 ns | 3-STATE | 18b | 9 Mb | COMMON | Asynchronous | 36b | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||
 | 7005S35PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 250mA | RAM, SDR, SRAM | 2012 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 35 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | IDT71024S20TYI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 32 | 140mA | RAM, SRAM - Asynchronous | Rail/Tube | 2010 | e0 | no | 3 (168 Hours) | 32 | 85°C | -40°C | 5V | DUAL | J BEND | 225 | 1 | not_compliant | 20 | 不合格 | 5V | INDUSTRIAL | 5V | Parallel | 1 | 20 ns | 3-STATE | 8 | 17b | 1 Mb | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 3.759mm | 20.96mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||
 | IDT71024S12TY | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 32 | RAM, SRAM - Asynchronous | 2007 | e0 | no | 3 (168 Hours) | 32 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 0.16mA | 128KX8 | 3-STATE | 8 | 0.01A | 1048576 bit | 12 ns | COMMON | 4.5V | 5.5V | 4.5V | YES | 3.759mm | 20.96mm | 7.62mm | Non-RoHS Compliant | ||||||||||||||||||||||||||
 | IDT71024S20Y | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 32 | RAM, SRAM - Asynchronous | 1997 | e0 | no | 3 (168 Hours) | 32 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 20 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 0.14mA | 128KX8 | 3-STATE | 8 | 0.01A | 1048576 bit | 20 ns | COMMON | 4.5V | 5.5V | 4.5V | YES | 3.683mm | 20.96mm | 10.16mm | Non-RoHS Compliant | ||||||||||||||||||||||||||
 | 71V424L15YGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 36 | 145mA | RAM, SDR, SRAM - Asynchronous | 2008 | e3 | yes | 活跃 | 3 (168 Hours) | 36 | Matte Tin (Sn) - annealed | 85°C | -40°C | 3.3V | DUAL | J BEND | 260 | 1 | INDUSTRIAL | Parallel | 512kB | 1 | 15 ns | 3-STATE | 19b | 4 Mb | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 3.683mm | 23.4mm | 10.2mm | 2.2mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||
 | 71V67603S150BGG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | BGA | 119 | 150MHz | RAM, SDR, SRAM | 2009 | 活跃 | 70°C | 0°C | 3.3V | 150MHz | 305mA | Parallel | 1.1MB | 1 | 3.8 ns | 18b | 9 Mb | 3.465V | 3.135V | 2.15mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||
 | 70V3599S166BC | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 500mA | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 1 | 1mm | 166MHz | COMMERCIAL | Parallel | 512kB | 2 | 20 ns | 3-STATE | 34b | 4.5 Mb | 0.03A | COMMON | Synchronous | 36b | 3.45V | 3.15V | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||
 | IDT71V546S133PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2007 | e0 | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 133MHz | 20 | R-PQFP-G100 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 0.31mA | 128KX36 | 3-STATE | 36 | 0.045A | 4718592 bit | 4.2 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | ||||||||||||||||||||||||
 | 71V67703S80BQG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | YES | 165 | RAM, SRAM | Tape & Reel | 2009 | e1 | yes | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 3.3V | BOTTOM | BALL | 260 | 1 | 30 | COMMERCIAL | Parallel | 1 | 256KX36 | 3-STATE | 18b | 9 Mb | 0.05A | 8 ns | COMMON | 3.465V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||
 | 7025L20PF | Integrated Device Technology (IDT) | 数据表 | 21 In Stock | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 240mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 16kB | 2 | 20 ns | 8KX16 | 3-STATE | 26b | 128 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | 70V261L25PFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 185mA | SDR | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | EAR99 | Matte Tin (Sn) - annealed | 85°C | -40°C | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.5mm | 40 | INDUSTRIAL | Parallel | 32kB | 2 | 25 ns | 16KX16 | 3-STATE | 14b | 256 kb | 0.003A | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||
 | 71321LA25TFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 220mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | INDUSTRIAL | Parallel | 2kB | 2 | 25 ns | 3-STATE | 22b | 16 kb | 0.004A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 10mm | 10mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
 | 71V416S15YG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 44 | 170mA | RAM, SDR, SRAM - Asynchronous | 2012 | e3 | yes | 活跃 | 3 (168 Hours) | 44 | 哑光锡 | 70°C | 0°C | 3.3V | DUAL | J BEND | 260 | 1 | 170mA | COMMERCIAL | Parallel | 512kB | 1 | 15 ns | 3-STATE | 18b | 4 Mb | 0.02A | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 28.6mm | 10.2mm | 2.9mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||
 | 70V3379S6BC8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 310mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | 83.3MHz | COMMERCIAL | Parallel | 2 | 6 ns | 3-STATE | 30b | 576 kb | 0.015A | COMMON | Synchronous | 18b | 3.45V | 3.15V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||
 | 71342LA55PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 200mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 55 ns | 4KX8 | 3-STATE | 24b | 32 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | 71V546S100PFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 260mA | 100MHz | RAM, SDR, SRAM | 2007 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 85°C | -40°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 100MHz | 30 | INDUSTRIAL | Parallel | 512kB | 1 | 5 ns | 3-STATE | 17b | 4.5 Mb | 0.045A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||
 | 71V67903S75PFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | TQFP | 100 | 285mA | RAM, SRAM | Tape & Reel | 2004 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 85°C | -40°C | FLOW-THROUGH ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 117MHz | 30 | INDUSTRIAL | Parallel | 1 | 7.5 ns | 3-STATE | 19b | 9 Mb | 0.07A | COMMON | Synchronous | 18b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
 | 70T3339S133BCI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 450mA | RAM, SRAM | Tape & Reel | 2010 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 2.5V | BOTTOM | BALL | 225 | 1 | 1mm | 133MHz | 20 | INDUSTRIAL | Parallel | 2 | 15 ns | 3-STATE | 19b | 9 Mb | COMMON | Synchronous | 18b | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
 | 71V65803S150BQG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 165 | 325mA | 150MHz | RAM, SDR, SRAM | 2005 | e1 | yes | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 爆破计数器 | 3.3V | BOTTOM | BALL | 260 | 1 | 150MHz | 30 | COMMERCIAL | Parallel | 1.1MB | 1 | 6.7 ns | 3-STATE | 19b | 9 Mb | 0.04A | COMMON | Synchronous | 18b | 3.465V | 3.135V | 15mm | 13mm | 1.2mm | 无 | 符合RoHS标准 | 无铅 |
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70V3379S4BCG
Integrated Device Technology (IDT)
分类:Memory
-
70V25L25PFI
Integrated Device Technology (IDT)
分类:Memory
-
7005S55PF
Integrated Device Technology (IDT)
分类:Memory
-
70T633S10BCI
Integrated Device Technology (IDT)
分类:Memory
-
IDT71016S20PH
Integrated Device Technology (IDT)
分类:Memory
-
70T651S10BCI8
Integrated Device Technology (IDT)
分类:Memory
-
7005S35PF
Integrated Device Technology (IDT)
分类:Memory
-
IDT71024S20TYI
Integrated Device Technology (IDT)
分类:Memory
-
IDT71024S12TY
Integrated Device Technology (IDT)
分类:Memory
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IDT71024S20Y
Integrated Device Technology (IDT)
分类:Memory
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71V424L15YGI8
Integrated Device Technology (IDT)
分类:Memory
-
71V67603S150BGG8
Integrated Device Technology (IDT)
分类:Memory
-
70V3599S166BC
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V546S133PFI
Integrated Device Technology (IDT)
分类:Memory
-
71V67703S80BQG8
Integrated Device Technology (IDT)
分类:Memory
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7025L20PF
Integrated Device Technology (IDT)
分类:Memory
-
70V261L25PFGI
Integrated Device Technology (IDT)
分类:Memory
-
71321LA25TFI
Integrated Device Technology (IDT)
分类:Memory
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71V416S15YG8
Integrated Device Technology (IDT)
分类:Memory
-
70V3379S6BC8
Integrated Device Technology (IDT)
分类:Memory
-
71342LA55PF
Integrated Device Technology (IDT)
分类:Memory
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71V546S100PFGI8
Integrated Device Technology (IDT)
分类:Memory
-
71V67903S75PFGI8
Integrated Device Technology (IDT)
分类:Memory
-
70T3339S133BCI8
Integrated Device Technology (IDT)
分类:Memory
-
71V65803S150BQG
Integrated Device Technology (IDT)
分类:Memory