品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 最大电流源 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间(最大) | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 (最大值) | 电压 - 供电 (最小值) | 输出启用 | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | |||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | 71V2556S133PFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 310mA | 133MHz | RAM, SDR, SRAM | 2011 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 85°C | -40°C | 流水线结构 | 3.3V | QUAD | FLAT | 260 | 1 | 0.65mm | 133MHz | 30 | INDUSTRIAL | Parallel | 512kB | 1 | 4.2 ns | 3-STATE | 17b | 4.5 Mb | 0.045A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
![]() | IDT71256SA15TP | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | DIP | NO | 28 | RAM, SRAM - Asynchronous | 2010 | e0 | 28 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 5V | DUAL | THROUGH-HOLE | 225 | 1 | 2.54mm | 30 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 0.15mA | 32KX8 | 3-STATE | 8 | 0.015A | 262144 bit | 15 ns | COMMON | 4.5V | 5.5V | 4.5V | YES | 4.572mm | 34.671mm | 7.62mm | 符合RoHS标准 | ||||||||||||||||||||||||||||
![]() | 70V261L25PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 657.000198mg | 140mA | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.5mm | 30 | 140mA | COMMERCIAL | Parallel | 32kB | 2 | 25 ns | 16KX16 | 3-STATE | 28b | 256 kb | 0.003A | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 1.4mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||
![]() | 71V3559S85PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 225mA | 100MHz | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | FLOW-THROUGH ARCHITECHTURE | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 91MHz | 30 | COMMERCIAL | Parallel | 512kB | 1 | 8.5 ns | 3-STATE | 18b | 4.5 Mb | 0.04A | COMMON | Synchronous | 18b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
![]() | 71016S12YG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 44 | 210mA | RAM, SDR, SRAM - Asynchronous | 切割胶带 | 2004 | 活跃 | 70°C | 0°C | 5V | Parallel | 128kB | 1 | 12 ns | 16b | 1 Mb | Asynchronous | 16b | 5.5V | 4.5V | 28.6mm | 10.2mm | 2.9mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||
![]() | 71024S20TYGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 32 | 140mA | RAM, SDR, SRAM - Asynchronous | 2013 | e3 | yes | 活跃 | 3 (168 Hours) | 32 | Matte Tin (Sn) - annealed | 85°C | -40°C | 5V | DUAL | J BEND | 260 | 1 | 5V | INDUSTRIAL | Parallel | 128kB | 1 | 20 ns | 3-STATE | 17b | 1 Mb | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 3.759mm | 21.95mm | 7.6mm | 2.67mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||
![]() | 70V639S10BF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 500mA | RAM, SDR, SRAM | Bulk | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 225 | 1 | 0.8mm | 20 | COMMERCIAL | Parallel | 256kB | 2 | 10 ns | 3-STATE | 34b | 2.3 Mb | 0.015A | COMMON | Asynchronous | 18b | 3.45V | 3.15V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||
![]() | IDT71256L35Y | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 28 | 115mA | RAM, SRAM - Asynchronous | Rail/Tube | 2005 | e0 | no | 3 (168 Hours) | 28 | EAR99 | 70°C | 0°C | 5V | DUAL | J BEND | 225 | 1 | not_compliant | 30 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 35 ns | 32KX8 | 3-STATE | 8 | 15b | 256 kb | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | YES | 3.556mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||
![]() | 71T75602S100BG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | BGA | 119 | 175mA | 100MHz | RAM, SDR, SRAM | 2012 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 2.5V | BOTTOM | BALL | 225 | 1 | 100MHz | COMMERCIAL | Parallel | 2.3MB | 1 | 5 ns | 3-STATE | 19b | 18 Mb | 0.04A | COMMON | Synchronous | 36b | 2.38V | 2.625V | 2.375V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
![]() | 7140LA55J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 110mA | RAM, SDR, SRAM | 2013 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 1kB | 2 | 55 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 4.57mm | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
![]() | 71V321L55J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 85mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | J BEND | 225 | 1 | COMMERCIAL | Parallel | 2kB | 2 | 55 ns | 3-STATE | 22b | 16 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 3.6V | 3V | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||
![]() | 7024S35J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 250mA | RAM, SDR, SRAM | 2000 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 35 ns | 4KX16 | 3-STATE | 24b | 64 kb | 0.015A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 4.57mm | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
![]() | 71V016SA20YG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 44 | 120mA | RAM, SDR, SRAM - Asynchronous | Tape & Reel | 2011 | e3 | yes | 活跃 | 3 (168 Hours) | 44 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | DUAL | J BEND | 260 | 1 | COMMERCIAL | Parallel | 128kB | 1 | 20 ns | 3-STATE | 16b | 1 Mb | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 3.683mm | 28.6mm | 10.2mm | 2.9mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||
![]() | 70V3599S133BFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 480mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | BOTTOM | BALL | 1 | 0.8mm | 133MHz | INDUSTRIAL | Parallel | 2 | 15 ns | 3-STATE | 34b | 4.5 Mb | 0.04A | COMMON | Synchronous | 36b | 3.45V | 3.15V | 1.7mm | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||
![]() | 71T75602S100BGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | BGA | 119 | 195mA | 100MHz | RAM, SDR, SRAM | 2012 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 流水线结构 | 2.5V | BOTTOM | BALL | 225 | 1 | 100MHz | 195mA | INDUSTRIAL | Parallel | 2.3MB | 1 | 5 ns | 3-STATE | 19b | 18 Mb | 0.06A | COMMON | Synchronous | 36b | 2.38V | 2.625V | 2.375V | 2.15mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
![]() | 6116LA70DB | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | CDIP | NO | 24 | RAM, SRAM - Asynchronous | Military grade | Bulk | 2013 | e0 | no | 活跃 | 1 (Unlimited) | 24 | Tin/Lead (Sn/Pb) | 125°C | -55°C | 5V | DUAL | THROUGH-HOLE | 240 | 1 | 2.54mm | 5V | MILITARY | Parallel | 1 | 0.09mA | 2KX8 | 3-STATE | 11b | 16 kb | 0.0003A | MIL-STD-883 Class B | 70 ns | COMMON | 2V | 4.826mm | 32mm | 15.24mm | 2.9mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||
![]() | 71V256SA12PZGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TSOP | 28 | 90mA | RAM, SDR, SRAM - Asynchronous | 2006 | e3 | yes | 活跃 | 3 (168 Hours) | 28 | EAR99 | 哑光锡 | 85°C | -40°C | 3.3V | DUAL | 鸥翼 | 260 | 1 | 0.55mm | 30 | INDUSTRIAL | Parallel | 32kB | 1 | 12 ns | 32KX8 | 3-STATE | 15b | 256 kb | 0.002A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 8mm | 11.8mm | 1mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
![]() | 70V7319S133BF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 645mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | 0.8mm | 133MHz | 645mA | COMMERCIAL | Parallel | 512kB | 2 | 25 ns | 3-STATE | 18b | 4 Mb | 0.03A | COMMON | Synchronous | 18b | 3.45V | 3.15V | 1.4mm | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
![]() | 71V2556S166PFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 360mA | RAM, SRAM | Tape & Reel | 2011 | 活跃 | 85°C | -40°C | 3.3V | 166MHz | Parallel | 1 | 3.5 ns | 17b | 4.5 Mb | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||
![]() | 7130LA25TFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | LQFP | YES | 64 | RAM, SRAM | 2013 | e3 | yes | 3 (168 Hours) | 64 | EAR99 | Matte Tin (Sn) - annealed | 85°C | -40°C | 8542.32.00.41 | 5V | QUAD | 鸥翼 | 260 | 1 | 0.5mm | 30 | 不合格 | 5V | INDUSTRIAL | Parallel | 2 | ASYNCHRONOUS | 0.22mA | 1KX8 | 3-STATE | 0.004A | 8192 bit | 25 ns | COMMON | 2V | 5.5V | 4.5V | 1.6mm | 10mm | 10mm | 1.4mm | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||
![]() | 71V256SA15PZG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TSSOP | 28 | 85mA | RAM, SDR, SRAM - Asynchronous | 2006 | e3 | yes | 活跃 | 3 (168 Hours) | 28 | EAR99 | 哑光锡 | 70°C | 0°C | 3.3V | DUAL | 鸥翼 | 260 | 1 | 0.55mm | COMMERCIAL | Parallel | 32kB | 1 | 15 ns | 32KX8 | 3-STATE | 15b | 256 kb | 0.002A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 8mm | 11.8mm | 1mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||
![]() | 71V65703S80PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | TQFP | 100 | 250mA | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | FLOW-THROUGH | 3.3V | QUAD | 鸥翼 | 260 | 1 | 95MHz | 30 | COMMERCIAL | Parallel | 1.1MB | 1 | 8 ns | 256KX36 | 18b | 9 Mb | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||
![]() | 70V639S10BF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 500mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 225 | 1 | 0.8mm | 20 | COMMERCIAL | Parallel | 2 | 10 ns | 3-STATE | 17b | 2.3 Mb | 0.015A | COMMON | Asynchronous | 18b | 3.45V | 3.15V | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||
![]() | 71V3556SA100BGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 255mA | 100MHz | RAM, SDR, SRAM | 2013 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 3.3V | BOTTOM | BALL | 225 | 1 | 100MHz | 20 | INDUSTRIAL | Parallel | 512kB | 1 | 5 ns | 3-STATE | 17b | 4.5 Mb | 0.045A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
![]() | 71V2546S150BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 325mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 3.3V | BOTTOM | BALL | 225 | 1 | 150MHz | 20 | COMMERCIAL | Parallel | 1 | 3.8 ns | 3-STATE | 17b | 4.5 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 |
71V2556S133PFGI
Integrated Device Technology (IDT)
分类:Memory
IDT71256SA15TP
Integrated Device Technology (IDT)
分类:Memory
70V261L25PFG
Integrated Device Technology (IDT)
分类:Memory
71V3559S85PFG
Integrated Device Technology (IDT)
分类:Memory
71016S12YG8
Integrated Device Technology (IDT)
分类:Memory
71024S20TYGI
Integrated Device Technology (IDT)
分类:Memory
70V639S10BF
Integrated Device Technology (IDT)
分类:Memory
IDT71256L35Y
Integrated Device Technology (IDT)
分类:Memory
71T75602S100BG
Integrated Device Technology (IDT)
分类:Memory
7140LA55J
Integrated Device Technology (IDT)
分类:Memory
71V321L55J
Integrated Device Technology (IDT)
分类:Memory
7024S35J
Integrated Device Technology (IDT)
分类:Memory
71V016SA20YG8
Integrated Device Technology (IDT)
分类:Memory
70V3599S133BFI8
Integrated Device Technology (IDT)
分类:Memory
71T75602S100BGI
Integrated Device Technology (IDT)
分类:Memory
6116LA70DB
Integrated Device Technology (IDT)
分类:Memory
71V256SA12PZGI
Integrated Device Technology (IDT)
分类:Memory
70V7319S133BF8
Integrated Device Technology (IDT)
分类:Memory
71V2556S166PFGI8
Integrated Device Technology (IDT)
分类:Memory
7130LA25TFGI
Integrated Device Technology (IDT)
分类:Memory
71V256SA15PZG
Integrated Device Technology (IDT)
分类:Memory
71V65703S80PFG8
Integrated Device Technology (IDT)
分类:Memory
70V639S10BF8
Integrated Device Technology (IDT)
分类:Memory
71V3556SA100BGI
Integrated Device Technology (IDT)
分类:Memory
71V2546S150BG8
Integrated Device Technology (IDT)
分类:Memory
