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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 最大电流源 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 输出启用 | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 71V3577S75PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 255mA | 117MHz | RAM, SDR, SRAM | Tape & Reel | 2005 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 117MHz | 30 | COMMERCIAL | Parallel | 512kB | 1 | 7.5 ns | 3-STATE | 17b | 4.5 Mb | 0.03A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||
 | 71024S20TYGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 32 | 140mA | RAM, SDR, SRAM - Asynchronous | Tape & Reel | 2013 | e3 | yes | 活跃 | 3 (168 Hours) | 32 | Matte Tin (Sn) - annealed | 85°C | -40°C | 5V | DUAL | J BEND | 260 | 1 | 5V | INDUSTRIAL | Parallel | 128kB | 1 | 20 ns | 3-STATE | 17b | 1 Mb | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 3.76mm | 21.95mm | 7.6mm | 2.67mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
 | 71321SA35TF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | LQFP | 64 | 165mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 2kB | 2 | 35 ns | 3-STATE | 22b | 16 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 10mm | 10mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
 | IDT6116LA25TP | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | DIP | NO | 24 | RAM, SRAM - Asynchronous | 2008 | e0 | 24 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 5V | DUAL | THROUGH-HOLE | 225 | 1 | 2.54mm | not_compliant | 30 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 0.11mA | 2KX8 | 3-STATE | 8 | 0.00002A | 16384 bit | 25 ns | COMMON | 2V | 5.5V | 4.5V | YES | 4.191mm | 31.75mm | 7.62mm | Non-RoHS Compliant | |||||||||||||||||||||||
 | 7006L20PFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 320mA | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 64 | EAR99 | Matte Tin (Sn) - annealed | 85°C | -40°C | 5V | QUAD | 鸥翼 | 260 | 1 | 0.8mm | 30 | 5V | INDUSTRIAL | Parallel | 16kB | 2 | 20 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.004A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||
 | 70V05L15PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | YES | 64 | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 64 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.8mm | 30 | COMMERCIAL | Parallel | 8kB | 2 | 0.185mA | 15 ns | 8KX8 | 3-STATE | 26b | 64 kb | COMMON | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||
 | 71V30S55TF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 135mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 240 | 0.5mm | COMMERCIAL | Parallel | 1kB | 2 | 55 ns | 1KX8 | 3-STATE | 10b | 8 kb | 0.005A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 10mm | 10mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | 71V3557S85PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 225mA | 100MHz | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | FLOW-THROUGH ARCHITECHTURE | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 91MHz | 30 | COMMERCIAL | Parallel | 512kB | 1 | 8.5 ns | 3-STATE | 17b | 4.5 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||
 | 71V016SA20PHG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TSOP | 44 | 120mA | RAM, SDR, SRAM - Asynchronous | 2011 | e3 | yes | 活跃 | 3 (168 Hours) | 44 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | DUAL | 鸥翼 | 260 | 1 | 0.8mm | 30 | 120mA | COMMERCIAL | Parallel | 128kB | 1 | 20 ns | 3-STATE | 16b | 1 Mb | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 18.41mm | 10.16mm | 1mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||
 | 71024S15YG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 32 | 155mA | RAM, SDR, SRAM - Asynchronous | Tape & Reel | 2013 | e3 | yes | 活跃 | 3 (168 Hours) | 32 | Matte Tin (Sn) - annealed | 70°C | 0°C | 5V | DUAL | J BEND | 260 | 1 | 5V | COMMERCIAL | Parallel | 128kB | 1 | 15 ns | 3-STATE | 17b | 1 Mb | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 3.683mm | 20.9mm | 10.2mm | 2.2mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
 | 71V35761S166BGGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | BGA | 119 | 330mA | RAM, SDR, SRAM | 166MHz | 2009 | e1 | yes | Discontinued | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 流水线结构 | 3.3V | BOTTOM | BALL | 260 | 1 | 166MHz | 30 | INDUSTRIAL | Parallel | 512kB | 1 | 3.5 ns | 3-STATE | 17b | 4.5 Mb | 0.035A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||
 | 71V124SA15TYGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 32 | 120mA | RAM, SDR, SRAM - Asynchronous | 2013 | e3 | yes | 活跃 | 3 (168 Hours) | 32 | Matte Tin (Sn) - annealed | 85°C | -40°C | 3.3V | DUAL | J BEND | 260 | 1 | INDUSTRIAL | Parallel | 128kB | 1 | 15 ns | 3-STATE | 17b | 1 Mb | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 3.7592mm | 21.95mm | 7.6mm | 2.67mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||
 | 71V256SA15YGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 28 | 85mA | RAM, SDR, SRAM - Asynchronous | Tape & Reel | 2012 | e3 | yes | 活跃 | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) - annealed | 85°C | -40°C | 3.3V | DUAL | J BEND | 260 | 1 | INDUSTRIAL | Parallel | 32kB | 1 | 15 ns | 32KX8 | 3-STATE | 15b | 256 kb | 0.002A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 3.556mm | 17.9mm | 7.6mm | 2.67mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||
 | 71V3576S133PFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 260mA | 133MHz | RAM, SDR, SRAM | 2012 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 85°C | -40°C | 流水线结构 | 3.3V | QUAD | FLAT | 260 | 1 | 0.65mm | 133MHz | 30 | INDUSTRIAL | Parallel | 512kB | 1 | 4.2 ns | 3-STATE | 17b | 4.5 Mb | 0.035A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||
 | 70121L25J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 220mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 2.3kB | 2 | 25 ns | 3-STATE | 22b | 18 kb | 0.005A | COMMON | Asynchronous | 9b | 2V | 5.5V | 4.5V | 4.57mm | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | 71V3556SA150BGGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | BGA | 119 | RAM, SRAM | Tape & Reel | 2015 | e1 | yes | 活跃 | 3 (168 Hours) | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 3.3V | 260 | 150MHz | Parallel | 1 | 17b | 4 Mb | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||
 | 70V3319S133BFI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 208 | 480mA | 133MHz | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | PIPELINED OR FLOW-THROUGH ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | 0.8mm | 133MHz | 480mA | INDUSTRIAL | Parallel | 512kB | 2 | 4.2 ns | 3-STATE | 18b | 4.5 Mb | 0.04A | COMMON | Synchronous | 18b | 3.45V | 3.15V | 1.4mm | 15mm | 15mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
 | 70V7519S200BC8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 950mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | 200MHz | COMMERCIAL | Parallel | 2 | 10 ns | 3-STATE | 18b | 9 Mb | 0.03A | COMMON | Synchronous | 36b | 3.45V | 3.15V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | 71V256SA15PZG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TSSOP | 28 | 85mA | RAM, SDR, SRAM - Asynchronous | 2006 | e3 | yes | 活跃 | 3 (168 Hours) | 28 | EAR99 | 哑光锡 | 70°C | 0°C | 3.3V | DUAL | 鸥翼 | 260 | 1 | 0.55mm | COMMERCIAL | Parallel | 32kB | 1 | 15 ns | 32KX8 | 3-STATE | 15b | 256 kb | 0.002A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 8mm | 11.8mm | 1mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||
 | 71V65703S80PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | TQFP | 100 | 250mA | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | FLOW-THROUGH | 3.3V | QUAD | 鸥翼 | 260 | 1 | 95MHz | 30 | COMMERCIAL | Parallel | 1.1MB | 1 | 8 ns | 256KX36 | 18b | 9 Mb | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
 | 71V25761S183PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 340mA | 183MHz | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 183MHz | 30 | COMMERCIAL | Parallel | 512kB | 1 | 3.3 ns | 3-STATE | 17b | 4.5 Mb | 0.03A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||
 | 71256L20YGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 28 | RAM, SDR, SRAM - Asynchronous | 2011 | e3 | yes | 活跃 | 3 (168 Hours) | 28 | Matte Tin (Sn) - annealed | 85°C | -40°C | 5V | DUAL | J BEND | 260 | 1 | 5V | INDUSTRIAL | Parallel | 32kB | 1 | 20 ns | 32KX8 | 3-STATE | 15b | 256 kb | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 3.556mm | 17.9mm | 7.6mm | 2.67mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
 | 71256SA15TPGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | PDIP | 28 | 150mA | RAM, SDR, SRAM - Asynchronous | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 28 | EAR99 | Matte Tin (Sn) - annealed | 85°C | -40°C | 5V | DUAL | 260 | 1 | 2.54mm | 5V | INDUSTRIAL | Parallel | 32kB | 1 | 15 ns | 32KX8 | 3-STATE | 15b | 256 kb | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 4.572mm | 34.3mm | 7.62mm | 3.3mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||
 | 71V3556SA150BGG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | BGA | 119 | RAM, SRAM | Tape & Reel | 2015 | e1 | yes | 活跃 | 3 (168 Hours) | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 3.3V | 260 | 150MHz | Parallel | 1 | 17b | 4.5 Mb | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||
 | 7005L55PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 210mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 55 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 |
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71V3577S75PFG8
Integrated Device Technology (IDT)
分类:Memory
-
71024S20TYGI8
Integrated Device Technology (IDT)
分类:Memory
-
71321SA35TF
Integrated Device Technology (IDT)
分类:Memory
-
IDT6116LA25TP
Integrated Device Technology (IDT)
分类:Memory
-
7006L20PFGI
Integrated Device Technology (IDT)
分类:Memory
-
70V05L15PFG8
Integrated Device Technology (IDT)
分类:Memory
-
71V30S55TF
Integrated Device Technology (IDT)
分类:Memory
-
71V3557S85PFG
Integrated Device Technology (IDT)
分类:Memory
-
71V016SA20PHG
Integrated Device Technology (IDT)
分类:Memory
-
71024S15YG8
Integrated Device Technology (IDT)
分类:Memory
-
71V35761S166BGGI
Integrated Device Technology (IDT)
分类:Memory
-
71V124SA15TYGI8
Integrated Device Technology (IDT)
分类:Memory
-
71V256SA15YGI8
Integrated Device Technology (IDT)
分类:Memory
-
71V3576S133PFGI
Integrated Device Technology (IDT)
分类:Memory
-
70121L25J
Integrated Device Technology (IDT)
分类:Memory
-
71V3556SA150BGGI8
Integrated Device Technology (IDT)
分类:Memory
-
70V3319S133BFI8
Integrated Device Technology (IDT)
分类:Memory
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70V7519S200BC8
Integrated Device Technology (IDT)
分类:Memory
-
71V256SA15PZG
Integrated Device Technology (IDT)
分类:Memory
-
71V65703S80PFG8
Integrated Device Technology (IDT)
分类:Memory
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71V25761S183PFG
Integrated Device Technology (IDT)
分类:Memory
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71256L20YGI
Integrated Device Technology (IDT)
分类:Memory
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71256SA15TPGI
Integrated Device Technology (IDT)
分类:Memory
-
71V3556SA150BGG8
Integrated Device Technology (IDT)
分类:Memory
-
7005L55PF
Integrated Device Technology (IDT)
分类:Memory