品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 最大电流源 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间(最大) | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 (最大值) | 电压 - 供电 (最小值) | 输出启用 | 高度 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | 71V416L10YG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 44 | 180mA | RAM, SDR, SRAM - Asynchronous | 2013 | e3 | yes | 活跃 | 3 (168 Hours) | 44 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | DUAL | J BEND | 260 | 1 | COMMERCIAL | Parallel | 512kB | 1 | 10 ns | 3-STATE | 18b | 4 Mb | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 3.683mm | 28.6mm | 10.2mm | 2.9mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||
![]() | 7054S35PRF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 128 | 300mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 128 | EAR99 | Tin/Lead (Sn/Pb) | 70°C | 0°C | AUTOMATIC POWER DOWN; LOW POWER STANDBY MODE | 5V | QUAD | FLAT | 225 | 1 | 0.5mm | 5V | COMMERCIAL | Parallel | 4kB | 4 | 35 ns | 3-STATE | 12b | 32 kb | 0.0015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
![]() | 71V3556SA100BGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 255mA | 100MHz | RAM, SDR, SRAM | 2015 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 3.3V | BOTTOM | BALL | 225 | 1 | 100MHz | 20 | 255mA | INDUSTRIAL | Parallel | 512kB | 1 | 5 ns | 3-STATE | 17b | 4.5 Mb | 0.045A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.15mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
![]() | 71V016SA12PHGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TSOP | 44 | 160mA | RAM, SDR, SRAM - Asynchronous | Tape & Reel | 2011 | e3 | yes | 活跃 | 3 (168 Hours) | 44 | Matte Tin (Sn) - annealed | 85°C | -40°C | 3.3V | DUAL | 鸥翼 | 260 | 1 | 0.8mm | 30 | INDUSTRIAL | Parallel | 128kB | 1 | 12 ns | 3-STATE | 16b | 1 Mb | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 18.41mm | 10.16mm | 1mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||
![]() | 70V3579S4BC8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 460mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | PIPELINED OUTPUT MODE, SELF-TIMED WRITE CYCLE | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | 133MHz | COMMERCIAL | Parallel | 2 | 4.2 ns | 3-STATE | 30b | 1.1 Mb | COMMON | Synchronous | 36b | 3.45V | 3.15V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
![]() | 71256SA20TPG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | PDIP | 28 | 145mA | RAM, SDR, SRAM - Asynchronous | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 28 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | 5V | DUAL | 260 | 1 | 2.54mm | 5V | COMMERCIAL | Parallel | 32kB | 1 | 20 ns | 32KX8 | 3-STATE | 15b | 256 kb | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 4.572mm | 34.3mm | 7.62mm | 3.3mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||
![]() | 71V2556SA100BGG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 250mA | RAM, SRAM | 2011 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 流水线结构 | 3.3V | BOTTOM | BALL | 260 | 1 | 100MHz | 30 | COMMERCIAL | Parallel | 1 | 5 ns | 3-STATE | 17b | 4.5 Mb | 0.04A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||
![]() | 71V25761S183PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 340mA | 183MHz | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | -40°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 183MHz | COMMERCIAL | Parallel | 512kB | 1 | 3.3 ns | 17b | 4.5 Mb | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||
![]() | IDT7164S20Y | Integrated Device Technology (IDT) | 数据表 | 135 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 28 | 100mA | RAM, SRAM - Asynchronous | 2009 | e0 | 3 (168 Hours) | 28 | EAR99 | 70°C | 0°C | 5V | DUAL | J BEND | 225 | 1 | not_compliant | 20 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 20 ns | 8KX8 | 3-STATE | 8 | 13b | 64 kb | COMMON | Asynchronous | 8b | 5.5V | 4.5V | YES | 3.556mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||
![]() | IDT71V124SA10Y | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 32 | 145mA | RAM, SRAM - Asynchronous | Rail/Tube | 2007 | e0 | 3 (168 Hours) | 32 | 70°C | 0°C | 3.3V | DUAL | J BEND | 225 | 1 | 30 | 不合格 | COMMERCIAL | Parallel | 1 | 10 ns | 3-STATE | 8 | 17b | 1 Mb | COMMON | Asynchronous | 8b | 3.6V | 3.15V | 3.683mm | 20.955mm | 符合RoHS标准 | |||||||||||||||||||||||||||||||
![]() | 71V65803S100BGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 270mA | RAM, SRAM | Tape & Reel | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 流水线结构 | 3.3V | BOTTOM | BALL | 225 | 1 | 100MHz | 20 | INDUSTRIAL | Parallel | 1 | 5 ns | 3-STATE | 19b | 9 Mb | 0.06A | COMMON | Synchronous | 18b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
![]() | IDT71V124SA12TY | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 32 | RAM, SRAM - Asynchronous | 2007 | e0 | no | 3 (168 Hours) | 32 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 3.3V | COMMERCIAL | Parallel | 0.13mA | 128KX8 | 3-STATE | 8 | 0.01A | 1048576 bit | 12 ns | COMMON | 3V | 3.6V | 3.15V | 3.7592mm | 20.955mm | 7.62mm | Non-RoHS Compliant | ||||||||||||||||||||||||||
![]() | IDT71V124SA12Y | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 32 | 130mA | RAM, SRAM - Asynchronous | 2007 | e0 | 3 (168 Hours) | 32 | 70°C | 0°C | 3.3V | DUAL | J BEND | 225 | 1 | 30 | 不合格 | COMMERCIAL | Parallel | 1 | 12 ns | 3-STATE | 8 | 17b | 1 Mb | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 3.683mm | 20.955mm | 符合RoHS标准 | |||||||||||||||||||||||||||||||
![]() | IDT71V124SA12PH | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | SOIC | YES | 32 | RAM, SRAM - Asynchronous | 2007 | e0 | no | 3 (168 Hours) | 32 | 3A991.B.2.B | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | 鸥翼 | 225 | 1 | 1.27mm | 30 | R-PDSO-G32 | 不合格 | 3.3V | COMMERCIAL | Parallel | 0.13mA | 128KX8 | 3-STATE | 8 | 0.01A | 1048576 bit | 12 ns | COMMON | 3V | 3.6V | 3.15V | 1.2mm | 20.95mm | 10.16mm | 符合RoHS标准 | ||||||||||||||||||||||||
![]() | 71024S15TYGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 32 | 155mA | RAM, SDR, SRAM - Asynchronous | Tape & Reel | 2013 | e3 | yes | 活跃 | 3 (168 Hours) | 32 | Matte Tin (Sn) - annealed | 85°C | -40°C | 5V | DUAL | J BEND | 260 | 1 | 5V | INDUSTRIAL | Parallel | 128kB | 1 | 15 ns | 3-STATE | 17b | 1 Mb | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 3.76mm | 21.95mm | 7.6mm | 2.67mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||
![]() | IDT71V424S10Y8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 36 | RAM, SRAM - Asynchronous | Tape & Reel (TR) | 2009 | e0 | 3 (168 Hours) | 36 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 3.3V | COMMERCIAL | Parallel | 0.18mA | 512KX8 | 3-STATE | 8 | 0.02A | 4194304 bit | 10 ns | COMMON | 3V | 3.6V | 3V | 3.683mm | 23.495mm | 10.16mm | Non-RoHS Compliant | |||||||||||||||||||||||||
![]() | 71V3556SA150BGGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | BGA | 119 | RAM, SRAM | 2015 | e1 | yes | 活跃 | 3 (168 Hours) | 锡银铜 | 85°C | -40°C | 3.3V | 260 | 150MHz | Parallel | 1 | 17b | 4 Mb | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||
![]() | 71V321L25PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 100mA | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 64 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.8mm | 30 | INDUSTRIAL | Parallel | 2kB | 2 | 25 ns | 3-STATE | 22b | 16 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||
![]() | 70T653MS12BC8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 710mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 2.5V | BOTTOM | BALL | 225 | 1 | 1mm | 20 | COMMERCIAL | Parallel | 2 | 12 ns | 3-STATE | 19b | 18 Mb | COMMON | Asynchronous | 36b | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||
![]() | 7027S20PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 325mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 64kB | 2 | 20 ns | 3-STATE | 30b | 512 kb | 0.005A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
![]() | 71V35761SA183BGGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 350mA | RAM, SRAM | Tape & Reel | 2009 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 流水线结构 | 3.3V | BOTTOM | BALL | 260 | 1 | 183MHz | 30 | INDUSTRIAL | Parallel | 1 | 3.3 ns | 3-STATE | 17b | 4.5 Mb | 0.035A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||
![]() | 7132LA35PDG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | PDIP | 48 | 120mA | RAM, SDR, SRAM | Bulk | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 48 | EAR99 | Matte Tin (Sn) | 70°C | 0°C | 5V | DUAL | 260 | 1 | COMMERCIAL | Parallel | 2kB | 2 | 35 ns | 22b | 16 kb | Asynchronous | 8b | 5.5V | 4.5V | 61.7mm | 15.24mm | 3.8mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||
![]() | 71V35761SA166BGGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 330mA | 166MHz | RAM, SDR, SRAM | 2009 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 流水线结构 | 3.3V | BOTTOM | BALL | 260 | 1 | 166MHz | 30 | INDUSTRIAL | Parallel | 512kB | 1 | 3.5 ns | 3-STATE | 17b | 4.5 Mb | 0.035A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||
![]() | 71V35761SA166BGGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 330mA | 166MHz | RAM, SDR, SRAM | 2009 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 流水线结构 | 3.3V | BOTTOM | BALL | 260 | 1 | 166MHz | 30 | INDUSTRIAL | Parallel | 512kB | 1 | 3.5 ns | 3-STATE | 17b | 4.5 Mb | 0.035A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||
![]() | 70T3799MS133BBG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 14 Weeks | 表面贴装 | BGA | 324 | 740mA | 133MHz | RAM, SDR, SRAM | 2010 | e1 | yes | 活跃 | 3 (168 Hours) | 324 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | PIPELINED OR FLOW-THROUGH ARCHITECTURE | 2.5V | BOTTOM | BALL | 260 | 1 | 1mm | 133MHz | 30 | COMMERCIAL | Parallel | 1.1MB | 2 | 4.2 ns | 3-STATE | 34b | 9 Mb | COMMON | Synchronous | 72b | 2.6V | 2.4V | 19mm | 19mm | 1.76mm | 无 | 符合RoHS标准 | 无铅 |
71V416L10YG
Integrated Device Technology (IDT)
分类:Memory
7054S35PRF
Integrated Device Technology (IDT)
分类:Memory
71V3556SA100BGI8
Integrated Device Technology (IDT)
分类:Memory
71V016SA12PHGI8
Integrated Device Technology (IDT)
分类:Memory
70V3579S4BC8
Integrated Device Technology (IDT)
分类:Memory
71256SA20TPG
Integrated Device Technology (IDT)
分类:Memory
71V2556SA100BGG
Integrated Device Technology (IDT)
分类:Memory
71V25761S183PFG8
Integrated Device Technology (IDT)
分类:Memory
IDT7164S20Y
Integrated Device Technology (IDT)
分类:Memory
IDT71V124SA10Y
Integrated Device Technology (IDT)
分类:Memory
71V65803S100BGI8
Integrated Device Technology (IDT)
分类:Memory
IDT71V124SA12TY
Integrated Device Technology (IDT)
分类:Memory
IDT71V124SA12Y
Integrated Device Technology (IDT)
分类:Memory
IDT71V124SA12PH
Integrated Device Technology (IDT)
分类:Memory
71024S15TYGI8
Integrated Device Technology (IDT)
分类:Memory
IDT71V424S10Y8
Integrated Device Technology (IDT)
分类:Memory
71V3556SA150BGGI
Integrated Device Technology (IDT)
分类:Memory
71V321L25PFG
Integrated Device Technology (IDT)
分类:Memory
70T653MS12BC8
Integrated Device Technology (IDT)
分类:Memory
7027S20PF
Integrated Device Technology (IDT)
分类:Memory
71V35761SA183BGGI8
Integrated Device Technology (IDT)
分类:Memory
7132LA35PDG
Integrated Device Technology (IDT)
分类:Memory
71V35761SA166BGGI
Integrated Device Technology (IDT)
分类:Memory
71V35761SA166BGGI8
Integrated Device Technology (IDT)
分类:Memory
70T3799MS133BBG
Integrated Device Technology (IDT)
分类:Memory
