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品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 内存宽度 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 （最大值） | 电压 - 供电 （最小值） | 输出启用 | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | IDT71256SA20TP | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | PDIP | 28 | 145mA | RAM, SRAM - Asynchronous | 2010 | e0 | 28 | EAR99 | 70°C | 0°C | 5V | DUAL | 225 | 1 | 2.54mm | not_compliant | 30 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 20 ns | 32KX8 | 3-STATE | 8 | 15b | 256 kb | COMMON | Asynchronous | 8b | 5.5V | 4.5V | YES | 4.572mm | Non-RoHS Compliant | |||||||||||||||||||||||||||
 | 70T631S12BCI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 395mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 2.5V | BOTTOM | BALL | 225 | 1 | 1mm | 20 | INDUSTRIAL | Parallel | 2 | 12 ns | 3-STATE | 18b | 4 Mb | COMMON | Asynchronous | 18b | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||
 | 70V3579S5BCI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 415mA | RAM, SDR, SRAM | Bulk | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 3.3V | BOTTOM | BALL | 225 | 1 | 1mm | 100MHz | INDUSTRIAL | Parallel | 128kB | 2 | 10 ns | 3-STATE | 30b | 1.1 Mb | COMMON | Synchronous | 36b | 3.45V | 3.15V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
 | 71V35761SA183BG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 340mA | 183MHz | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 流水线结构 | 3.3V | BOTTOM | BALL | 225 | 1 | 183MHz | 20 | COMMERCIAL | Parallel | 512kB | 1 | 3.3 ns | 3-STATE | 17b | 4.5 Mb | 0.03A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||
 | 71V35761S166PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TQFP | 100 | 320mA | 166MHz | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | 流水线结构 | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | 166MHz | 30 | COMMERCIAL | Parallel | 512kB | 1 | 3.5 ns | 3-STATE | 17b | 4.5 Mb | 0.03A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||
 | 7133SA25J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 68 | 300mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 68 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 4kB | 2 | 25 ns | 3-STATE | 22b | 32 kb | 0.015A | COMMON | Asynchronous | 16b | 2V | 5.5V | 4.5V | 24mm | 24mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | 71V416L10BE | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TFBGA | 48 | 180mA | RAM, SDR, SRAM - Asynchronous | 2013 | e0 | no | 活跃 | 4 (72 Hours) | 48 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 225 | 1 | 0.75mm | 20 | COMMERCIAL | Parallel | 512kB | 1 | 10 ns | 3-STATE | 18b | 4 Mb | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 9mm | 9mm | 1.2mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||
 | IDT71V3578S133PFI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2005 | e0 | no | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | not_compliant | 133MHz | 20 | R-PQFP-G100 | 不合格 | 3.3V | INDUSTRIAL | Parallel | SYNCHRONOUS | 0.26mA | 256KX18 | 3-STATE | 18 | 0.035A | 4718592 bit | 4.2 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | Non-RoHS Compliant | |||||||||||||||||||
 | 71V416L10YG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 44 | 180mA | RAM, SDR, SRAM - Asynchronous | 2013 | e3 | yes | 活跃 | 3 (168 Hours) | 44 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | DUAL | J BEND | 260 | 1 | COMMERCIAL | Parallel | 512kB | 1 | 10 ns | 3-STATE | 18b | 4 Mb | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 3.683mm | 28.6mm | 10.2mm | 2.9mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||
 | IDT71V424S12Y | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 36 | RAM, SRAM - Asynchronous | 2009 | e0 | no | 3 (168 Hours) | 36 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | 30 | 不合格 | 3.3V | COMMERCIAL | Parallel | 1 | 0.17mA | 512KX8 | 3-STATE | 8 | 0.02A | 4194304 bit | 12 ns | COMMON | 3V | 3.6V | 3V | YES | 3.683mm | 23.495mm | 10.16mm | 符合RoHS标准 | |||||||||||||||||||||||
 | 71V416L15BEG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | TFBGA | 48 | 160mA | RAM, SDR, SRAM - Asynchronous | 2012 | e1 | yes | 活跃 | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | 3.3V | BOTTOM | BALL | 260 | 1 | 0.75mm | INDUSTRIAL | Parallel | 512kB | 1 | 15 ns | 3-STATE | 18b | 4 Mb | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 9mm | 9mm | 1.2mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
 | IDT71V424L15YI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 36 | 145mA | RAM, SRAM - Asynchronous | Rail/Tube | 2009 | e0 | 3 (168 Hours) | 36 | 85°C | -40°C | 3.3V | DUAL | J BEND | 225 | 1 | not_compliant | 30 | 不合格 | INDUSTRIAL | Parallel | 1 | 15 ns | 3-STATE | 8 | 19b | 4 Mb | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 3.683mm | 23.495mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||
 | IDT6116LA45TP | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | DIP | NO | 24 | RAM, SRAM - Asynchronous | 2008 | e0 | 24 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 5V | DUAL | THROUGH-HOLE | 225 | 1 | 2.54mm | not_compliant | 30 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 0.075mA | 2KX8 | 3-STATE | 8 | 0.00002A | 16384 bit | 45 ns | COMMON | 2V | 5.5V | 4.5V | YES | 4.191mm | 31.75mm | 7.62mm | Non-RoHS Compliant | |||||||||||||||||||||||
 | 71T75902S85BG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | BGA | 119 | 225mA | RAM, SDR, SRAM | 100MHz | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 2.5V | BOTTOM | BALL | 225 | 1 | 91MHz | 20 | COMMERCIAL | Parallel | 2.3MB | 1 | 8.5 ns | 3-STATE | 20b | 18 Mb | 0.04A | COMMON | Synchronous | 18b | 2.38V | 2.625V | 2.375V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
 | 71T75802S150BGGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | BGA | YES | 119 | RAM, SRAM | Tape & Reel | 2012 | e1 | yes | 活跃 | 3 (168 Hours) | 119 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 流水线结构 | 2.5V | BOTTOM | BALL | 260 | 1 | 150MHz | INDUSTRIAL | Parallel | 1 | 0.235mA | 3-STATE | 20b | 18 Mb | 0.06A | 3.8 ns | COMMON | 2.38V | 2.625V | 2.375V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||
 | 71321SA55JI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 190mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 5V | INDUSTRIAL | Parallel | 2kB | 2 | 55 ns | 3-STATE | 22b | 16 kb | 0.03A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||
 | IDT71V416S15Y | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | YES | 44 | RAM, SRAM - Asynchronous | 2007 | e0 | no | 3 (168 Hours) | 44 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 3.3V | DUAL | J BEND | 225 | 1 | 1.27mm | not_compliant | 30 | 不合格 | 3.3V | COMMERCIAL | Parallel | 1 | 0.17mA | 256KX16 | 3-STATE | 16 | 0.02A | 4194304 bit | 15 ns | COMMON | 3V | 3.6V | 3V | YES | 3.683mm | 28.575mm | 10.16mm | Non-RoHS Compliant | ||||||||||||||||||||||
 | IDT71V256SA15PZI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | TSSOP | YES | 28 | RAM, SRAM - Asynchronous | 2009 | e0 | 3 (168 Hours) | 28 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 8542.32.00.41 | 3.3V | DUAL | 鸥翼 | 240 | 1 | 0.55mm | not_compliant | 20 | R-PDSO-G28 | 不合格 | 3.3V | INDUSTRIAL | Parallel | 1 | 0.085mA | 32KX8 | 3-STATE | 8 | 0.002A | 262144 bit | 15 ns | COMMON | 3V | 3.6V | 3V | YES | 1.2mm | 11.8mm | 8mm | Non-RoHS Compliant | |||||||||||||||||||||
 | 71V016SA20BFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 48 | 120mA | RAM, SDR, SRAM - Asynchronous | 2011 | e1 | yes | 活跃 | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 85°C | -40°C | 3.3V | BOTTOM | BALL | 260 | 1 | 0.75mm | 30 | INDUSTRIAL | Parallel | 128kB | 1 | 20 ns | 3-STATE | 16b | 1 Mb | COMMON | Asynchronous | 16b | 3V | 3.6V | 3V | 7mm | 7mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
 | IDT71V546S100PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LQFP | YES | 100 | RAM, SRAM | 2007 | e0 | no | 3 (168 Hours) | 100 | 3A991.B.2.A | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 流水线结构 | 8542.32.00.41 | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | 100MHz | 20 | R-PQFP-G100 | 不合格 | 3.3V | COMMERCIAL | Parallel | SYNCHRONOUS | 0.25mA | 128KX36 | 3-STATE | 36 | 0.04A | 4718592 bit | 5 ns | COMMON | 3.14V | 3.465V | 3.135V | 1.6mm | 20mm | 14mm | 符合RoHS标准 | ||||||||||||||||||||
 | 71V321L25PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 100mA | RAM, SDR, SRAM | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 64 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.8mm | 30 | INDUSTRIAL | Parallel | 2kB | 2 | 25 ns | 3-STATE | 22b | 16 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||
 | 7025S55J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 84 | 250mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 1 (Unlimited) | 84 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 16kB | 2 | 55 ns | 8KX16 | 3-STATE | 26b | 128 kb | 0.015A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 4.57mm | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||
 | 71421SA35PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 165mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 2kB | 2 | 35 ns | 3-STATE | 22b | 16 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
 | IDT6116SA25TP | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | DIP | NO | 24 | RAM, SRAM - Asynchronous | 2008 | e0 | 24 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 5V | DUAL | THROUGH-HOLE | 225 | 1 | 2.54mm | not_compliant | 30 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 0.12mA | 2KX8 | 3-STATE | 8 | 0.002A | 16384 bit | 25 ns | COMMON | 4.5V | 5.5V | 4.5V | YES | 4.191mm | 31.75mm | 7.62mm | Non-RoHS Compliant | |||||||||||||||||||||||
 | IDT6116SA35TP | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | DIP | NO | 24 | RAM, SRAM - Asynchronous | 2008 | e0 | 24 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 8542.32.00.41 | 5V | DUAL | THROUGH-HOLE | 225 | 1 | 2.54mm | not_compliant | 30 | 不合格 | 5V | COMMERCIAL | Parallel | 1 | 0.1mA | 2KX8 | 3-STATE | 8 | 0.002A | 16384 bit | 35 ns | COMMON | 4.5V | 5.5V | 4.5V | YES | 4.191mm | 31.75mm | 7.62mm | Non-RoHS Compliant |
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IDT71256SA20TP
Integrated Device Technology (IDT)
分类:Memory
-
70T631S12BCI8
Integrated Device Technology (IDT)
分类:Memory
-
70V3579S5BCI
Integrated Device Technology (IDT)
分类:Memory
-
71V35761SA183BG8
Integrated Device Technology (IDT)
分类:Memory
-
71V35761S166PFG8
Integrated Device Technology (IDT)
分类:Memory
-
7133SA25J
Integrated Device Technology (IDT)
分类:Memory
-
71V416L10BE
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V3578S133PFI
Integrated Device Technology (IDT)
分类:Memory
-
71V416L10YG
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V424S12Y
Integrated Device Technology (IDT)
分类:Memory
-
71V416L15BEG
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V424L15YI
Integrated Device Technology (IDT)
分类:Memory
-
IDT6116LA45TP
Integrated Device Technology (IDT)
分类:Memory
-
71T75902S85BG
Integrated Device Technology (IDT)
分类:Memory
-
71T75802S150BGGI8
Integrated Device Technology (IDT)
分类:Memory
-
71321SA55JI
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V416S15Y
Integrated Device Technology (IDT)
分类:Memory
-
IDT71V256SA15PZI
Integrated Device Technology (IDT)
分类:Memory
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71V016SA20BFGI
Integrated Device Technology (IDT)
分类:Memory
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IDT71V546S100PF
Integrated Device Technology (IDT)
分类:Memory
-
71V321L25PFG
Integrated Device Technology (IDT)
分类:Memory
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7025S55J
Integrated Device Technology (IDT)
分类:Memory
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71421SA35PF
Integrated Device Technology (IDT)
分类:Memory
-
IDT6116SA25TP
Integrated Device Technology (IDT)
分类:Memory
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IDT6116SA35TP
Integrated Device Technology (IDT)
分类:Memory