品牌是'IDT' (6623)
对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | Current - Supply (Nom) | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 资历状况 | 电源 | 温度等级 | 界面 | 内存大小 | 端口的数量 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 组织结构 | 输出特性 | 地址总线宽度 | 密度 | 待机电流-最大值 | 访问时间(最大) | I/O类型 | 同步/异步 | 字长 | 待机电压-最小值 | 电压 - 供电 (最大值) | 电压 - 供电 (最小值) | 座位高度(最大) | 长度 | 宽度 | 器件厚度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | 70T3719MS166BBG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 14 Weeks | 表面贴装 | BGA | 324 | 900mA | 166MHz | RAM, SDR, SRAM | Bulk | 2010 | e1 | yes | 活跃 | 3 (168 Hours) | 324 | Tin/Silver/Copper (Sn/Ag/Cu) | 70°C | 0°C | PIPELINED OR FLOW-THROUGH ARCHITECTURE | 2.5V | BOTTOM | BALL | 260 | 1 | 1mm | 166MHz | 30 | COMMERCIAL | Parallel | 2.3MB | 2 | 3.6 ns | 3-STATE | 36b | 18 Mb | COMMON | Synchronous | 72b | 2.6V | 2.4V | 19mm | 19mm | 1.76mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||
![]() | 70V07L55PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 80 | 120mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 80 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.65mm | 20 | COMMERCIAL | Parallel | 32kB | 2 | 55 ns | 3-STATE | 30b | 256 kb | 0.003A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||
![]() | 71V321S55PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 115mA | RAM, SDR, SRAM | 2006 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | COMMERCIAL | Parallel | 2kB | 2 | 55 ns | 3-STATE | 22b | 16 kb | 0.005A | COMMON | Asynchronous | 8b | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||
![]() | 70121S35J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 250mA | RAM, SDR, SRAM | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 2.3kB | 2 | 35 ns | 3-STATE | 11b | 18 kb | 0.015A | COMMON | Asynchronous | 9b | 2V | 5.5V | 4.5V | 4.57mm | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||
![]() | 71T75902S75PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | LQFP | YES | 100 | RAM, SRAM | Tape & Reel | 2005 | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) - annealed | 70°C | 0°C | FLOW-THROUGH ARCHITECTURE | 2.5V | QUAD | 鸥翼 | 260 | 1 | 0.65mm | INDUSTRIAL | Parallel | 1 | 0.275mA | 3-STATE | 20b | 18 Mb | 0.04A | 7.5 ns | COMMON | 2.38V | 2.625V | 2.375V | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||
![]() | 70V05S55PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | YES | 64 | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 3.3V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | COMMERCIAL | Parallel | 8kB | 2 | 0.18mA | 55 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.005A | COMMON | 3V | 3.6V | 3V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||
![]() | 70V659S10DR | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PQFP | 208 | 500mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 208 | Tin/Lead (Sn/Pb) | 70°C | 0°C | 3.3V | QUAD | 鸥翼 | 225 | 1 | 0.5mm | 20 | COMMERCIAL | Parallel | 512kB | 2 | 10 ns | 3-STATE | 34b | 4.5 Mb | 0.015A | COMMON | Asynchronous | 36b | 3.45V | 3.15V | 4.1mm | 28mm | 28mm | 3.5mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||
![]() | 7130SA55C | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 通孔 | DIP | 48 | 155mA | RAM, SDR, SRAM | Bulk | 2005 | 活跃 | 70°C | 0°C | 5V | Parallel | 1kB | 2 | 55 ns | 10b | 8 kb | Asynchronous | 8b | 5.5V | 4.5V | 61.72mm | 15.24mm | 3.3mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||||||||||||||||||
![]() | 71342LA25JI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 260mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 85°C | -40°C | 5V | QUAD | J BEND | 225 | 1 | 5V | INDUSTRIAL | Parallel | 4kB | 2 | 25 ns | 4KX8 | 3-STATE | 24b | 32 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 4.57mm | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||
![]() | 7005S25PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | YES | 64 | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 25 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.015A | COMMON | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||
![]() | 7130LA100J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 110mA | RAM, SDR, SRAM | 2013 | 活跃 | 70°C | 0°C | 5V | Parallel | 1kB | 2 | 100 ns | 20b | 8 kb | Asynchronous | 8b | 5.5V | 4.5V | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||
![]() | 70V261S55PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 140mA | RAM, SDR, SRAM | 2001 | 活跃 | 70°C | 0°C | 3.3V | Parallel | 32kB | 2 | 55 ns | 14b | 256 kb | Asynchronous | 16b | 3.6V | 3V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||
![]() | 70T631S10BCI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | 256 | 445mA | RAM, SRAM | Tape & Reel | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 256 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 2.5V | BOTTOM | BALL | 225 | 1 | 1mm | 20 | INDUSTRIAL | Parallel | 2 | 10 ns | 3-STATE | 36b | 4 Mb | COMMON | Asynchronous | 18b | 2.6V | 2.4V | 1.5mm | 17mm | 17mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
![]() | 7027L35PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 100 | 255mA | RAM, SDR, SRAM | 2009 | e0 | no | 活跃 | 3 (168 Hours) | 100 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE | 5V | QUAD | 鸥翼 | 240 | 1 | 0.5mm | 20 | 5V | COMMERCIAL | Parallel | 64kB | 2 | 35 ns | 3-STATE | 15b | 512 kb | 0.015A | COMMON | Asynchronous | 16b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||
![]() | 71321LA55TFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | LQFP | YES | 64 | RAM, SDR, SRAM | 2008 | e3 | yes | 活跃 | 3 (168 Hours) | 64 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP | 5V | QUAD | 鸥翼 | 260 | 1 | 0.5mm | 30 | 5V | COMMERCIAL | Parallel | 2kB | 2 | 0.11mA | 55 ns | 3-STATE | 22b | 16 kb | 0.0015A | COMMON | 2V | 5.5V | 4.5V | 1.6mm | 10mm | 10mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||
![]() | 71321SA35TFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | YES | 64 | RAM, SDR, SRAM | Bulk | 2008 | e3 | yes | 活跃 | 3 (168 Hours) | 64 | EAR99 | Matte Tin (Sn) - annealed | 70°C | 0°C | 自动断电 | 5V | QUAD | 鸥翼 | 260 | 1 | 0.5mm | 30 | 5V | COMMERCIAL | Parallel | 2kB | 2 | 0.165mA | 35 ns | 3-STATE | 22b | 16 kb | 0.015A | COMMON | 5.5V | 4.5V | 1.6mm | 10mm | 10mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||
![]() | 7008S15J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | PLCC | YES | 84 | RAM, SDR, SRAM | 2010 | e0 | no | 活跃 | 1 (Unlimited) | 84 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 64kB | 2 | 0.365mA | 15 ns | 64KX8 | 3-STATE | 32b | 512 kb | 0.015A | COMMON | 5.5V | 4.5V | 4.57mm | 29.21mm | 29.21mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||
![]() | 70125S35J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | LCC | YES | 52 | RAM, SRAM | Tape & Reel | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN | 5V | QUAD | J BEND | 225 | 1 | 未说明 | 不合格 | 5V | COMMERCIAL | Parallel | 2 | ASYNCHRONOUS | 3-STATE | 22b | 18 kb | 0.015A | 35 ns | COMMON | 2V | 4.57mm | 19mm | 19mm | 3.63mm | 符合RoHS标准 | 含铅 | |||||||||||||||||
![]() | 70V3379S4PRFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | TQFP | YES | 128 | RAM, SDR, SRAM | Bulk | 2009 | e3 | yes | 活跃 | 3 (168 Hours) | 128 | Matte Tin (Sn) - annealed | 70°C | 0°C | PIPELINED OUTPUT MODE; SELF TIMED WRITE CYCLE | 3.3V | QUAD | 鸥翼 | 260 | 1 | 0.5mm | 30 | COMMERCIAL | Parallel | 72kB | 2 | 133MHz | 0.46mA | 4.2 ns | 3-STATE | 15b | 576 kb | 0.015A | COMMON | 3.45V | 3.15V | 1.6mm | 20mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||
![]() | 7130LA35PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 120mA | RAM, SDR, SRAM | 2013 | 活跃 | 70°C | 0°C | 5V | Parallel | 1kB | 2 | 35 ns | 10b | 8 kb | Asynchronous | 8b | 5.5V | 4.5V | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||||||||||||||||||||||
![]() | 7140LA20PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 200mA | RAM, SDR, SRAM | 2013 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 1kB | 2 | 20 ns | 1KX8 | 3-STATE | 20b | 8 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||
![]() | 71321LA25J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | PLCC | 52 | 170mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 52 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP | 5V | QUAD | J BEND | 225 | 1 | 5V | COMMERCIAL | Parallel | 2kB | 2 | 25 ns | 3-STATE | 22b | 16 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 19mm | 19mm | 3.63mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||||||
![]() | 7006S35PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 250mA | RAM, SDR, SRAM | Tape & Reel | 2008 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 16kB | 2 | 35 ns | 16KX8 | 3-STATE | 28b | 128 kb | 0.015A | COMMON | Asynchronous | 8b | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||
![]() | 7005L15PF8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | TQFP | 64 | 260mA | RAM, SDR, SRAM | 2005 | e0 | no | 活跃 | 3 (168 Hours) | 64 | EAR99 | Tin/Lead (Sn85Pb15) | 70°C | 0°C | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | 5V | QUAD | 鸥翼 | 240 | 1 | 0.8mm | 20 | 5V | COMMERCIAL | Parallel | 8kB | 2 | 15 ns | 8KX8 | 3-STATE | 26b | 64 kb | 0.0015A | COMMON | Asynchronous | 8b | 2V | 5.5V | 4.5V | 1.6mm | 14mm | 14mm | 1.4mm | 无 | 符合RoHS标准 | 含铅 | |||||||||||
![]() | 71V25761S183BGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 7 Weeks | 表面贴装 | BGA | 119 | 350mA | RAM, SRAM | Tape & Reel | 2009 | e0 | no | Discontinued | 3 (168 Hours) | 119 | Tin/Lead (Sn63Pb37) | 85°C | -40°C | 流水线结构 | 3.3V | BOTTOM | BALL | 225 | 1 | 183MHz | 20 | INDUSTRIAL | Parallel | 1 | 3.3 ns | 3-STATE | 17b | 4.5 Mb | 0.035A | COMMON | Synchronous | 36b | 3.465V | 3.135V | 2.36mm | 14mm | 22mm | 2.15mm | 无 | 符合RoHS标准 | 含铅 |
70T3719MS166BBG
Integrated Device Technology (IDT)
分类:Memory
70V07L55PF
Integrated Device Technology (IDT)
分类:Memory
71V321S55PF
Integrated Device Technology (IDT)
分类:Memory
70121S35J
Integrated Device Technology (IDT)
分类:Memory
71T75902S75PFG8
Integrated Device Technology (IDT)
分类:Memory
70V05S55PF
Integrated Device Technology (IDT)
分类:Memory
70V659S10DR
Integrated Device Technology (IDT)
分类:Memory
7130SA55C
Integrated Device Technology (IDT)
分类:Memory
71342LA25JI8
Integrated Device Technology (IDT)
分类:Memory
7005S25PF8
Integrated Device Technology (IDT)
分类:Memory
7130LA100J8
Integrated Device Technology (IDT)
分类:Memory
70V261S55PF8
Integrated Device Technology (IDT)
分类:Memory
70T631S10BCI8
Integrated Device Technology (IDT)
分类:Memory
7027L35PF8
Integrated Device Technology (IDT)
分类:Memory
71321LA55TFG8
Integrated Device Technology (IDT)
分类:Memory
71321SA35TFG
Integrated Device Technology (IDT)
分类:Memory
7008S15J8
Integrated Device Technology (IDT)
分类:Memory
70125S35J8
Integrated Device Technology (IDT)
分类:Memory
70V3379S4PRFG
Integrated Device Technology (IDT)
分类:Memory
7130LA35PF8
Integrated Device Technology (IDT)
分类:Memory
7140LA20PF8
Integrated Device Technology (IDT)
分类:Memory
71321LA25J
Integrated Device Technology (IDT)
分类:Memory
7006S35PF8
Integrated Device Technology (IDT)
分类:Memory
7005L15PF8
Integrated Device Technology (IDT)
分类:Memory
71V25761S183BGI8
Integrated Device Technology (IDT)
分类:Memory
