Advanced Linear Devices ALD910029SALI

包装/外壳

SOIC-8

Vds - Drain-Source Breakdown Voltage

10.6 V

Vgs th - Gate-Source Threshold Voltage

2.92 V

Pd - Power Dissipation

500 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 85 C

Vgs - Gate-Source Voltage

- 12 V, + 12 V

Minimum Operating Temperature

- 40 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

-

Rds On - Drain-Source Resistance

2.9 MOhms

Id - Continuous Drain Current

80 mA

技术

Si

通道数量

2 Channel