Advanced Power Electronics AP9973GD
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AP9973GD详情
Advanced Power Electronics AP9973GD重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
终端数量
8
晶体管元件材料
SILICON
Manufacturer Part Number
AP9973GD
Part Life Cycle Code
接触制造商
Ihs Manufacturer
ADVANCED POWER ELECTRONICS CORP
Part Package Code
DIP
Package Description
IN-LINE, R-PDIP-T8
Risk Rank
5.66
Drain Current-Max (ID)
3.9 A
Package Style
IN-LINE
Package Shape
RECTANGULAR
Package Body Material
PLASTIC/EPOXY
Operating Temperature-Max
150 °C
Number of Elements
2
ECCN 代码
EAR99
HTS代码
8541.29.00.95
端子位置
DUAL
终端形式
THROUGH-HOLE
Reach合规守则
compliant
引脚数量
8
JESD-30代码
R-PDIP-T8
资历状况
不合格
配置
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
操作模式
增强型MOSFET
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
漏极-源极导通最大电阻
0.08 Ω
脉冲漏极电流-最大值(IDM)
20 A
DS 击穿电压-最小值
60 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
AP9973GD拓展信息
Advanced Power Electronics
Advanced Power Electronics
Advanced Power Electronics
Advanced Power Electronics
Advanced Power Electronics
Advanced Power Electronics
Advanced Power Electronics
Advanced Power Electronics
Advanced Power Electronics
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