Advanced Power Technology APT10M13JNR
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APT10M13JNR
42-APT10M13JNR
晶体管 - 特殊用途
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Power Field-Effect Transistor, 150A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
1最小包装量--
APT10M13JNR详情
Advanced Power Technology APT10M13JNR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
终端数量
4
晶体管元件材料
SILICON
Part Life Cycle Code
Obsolete
Ihs Manufacturer
ADVANCED POWER TECHNOLOGY INC
Package Description
FLANGE MOUNT, R-PUFM-D4
Drain Current-Max (ID)
150 A
Number of Elements
1
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Turn-off Time-Max (toff)
290 ns
Turn-on Time-Max (ton)
150 ns
ECCN 代码
EAR99
HTS代码
8541.29.00.95
端子位置
UPPER
终端形式
SOLDER LUG
Reach合规守则
unknown
JESD-30代码
R-PUFM-D4
资历状况
不合格
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
ISOLATED
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
漏极-源极导通最大电阻
0.013 Ω
脉冲漏极电流-最大值(IDM)
600 A
DS 击穿电压-最小值
100 V
雪崩能量等级(Eas)
1500 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
520 W
反馈上限-最大值 (Crss)
2250 pF
环境耗散-最大值
520 W
APT10M13JNR拓展信息
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