Advanced Power Technology APT55M85JFLL
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APT55M85JFLL
42-APT55M85JFLL
晶体管 - 特殊用途
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大陆
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Power Field-Effect Transistor, 51A I(D), 550V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
1最小包装量--
APT55M85JFLL详情
Advanced Power Technology APT55M85JFLL重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
终端数量
4
晶体管元件材料
SILICON
Rohs Code
有
Part Life Cycle Code
Transferred
Ihs Manufacturer
ADVANCED POWER TECHNOLOGY INC
Package Description
FLANGE MOUNT, R-PUFM-X4
Drain Current-Max (ID)
51 A
Number of Elements
1
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
ECCN 代码
EAR99
端子位置
UPPER
终端形式
UNSPECIFIED
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
unknown
时间@峰值回流温度-最大值(s)
未说明
参考标准
UL 认证
JESD-30代码
R-PUFM-X4
资历状况
不合格
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
ISOLATED
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
漏极-源极导通最大电阻
0.085 Ω
脉冲漏极电流-最大值(IDM)
204 A
DS 击穿电压-最小值
550 V
雪崩能量等级(Eas)
3000 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
521 W
APT55M85JFLL拓展信息
Advanced Power Technology
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哦! 它是空的。