Advanced Power Technology APT7575BN
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APT7575BN
42-APT7575BN
晶体管 - 特殊用途
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Power Field-Effect Transistor, 13A I(D), 750V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
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APT7575BN详情
Advanced Power Technology APT7575BN重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
终端数量
3
晶体管元件材料
SILICON
Rohs Code
无
Part Life Cycle Code
Obsolete
Ihs Manufacturer
ADVANCED POWER TECHNOLOGY INC
Package Description
FLANGE MOUNT, R-PSFM-T3
Drain Current-Max (ID)
13 A
Number of Elements
1
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Turn-off Time-Max (toff)
142 ns
Turn-on Time-Max (ton)
63 ns
JESD-609代码
e0
ECCN 代码
EAR99
端子表面处理
Tin/Lead (Sn/Pb)
HTS代码
8541.29.00.95
端子位置
SINGLE
终端形式
THROUGH-HOLE
Reach合规守则
unknown
JESD-30代码
R-PSFM-T3
资历状况
不合格
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
极性/通道类型
N-CHANNEL
JEDEC-95代码
TO-247AD
漏极-源极导通最大电阻
0.75 Ω
脉冲漏极电流-最大值(IDM)
52 A
DS 击穿电压-最小值
750 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
310 W
反馈上限-最大值 (Crss)
180 pF
环境耗散-最大值
310 W
APT7575BN拓展信息
Advanced Power Technology
Advanced Power Technology
Advanced Power Technology
Advanced Power Technology
Advanced Power Technology
Advanced Power Technology
Advanced Power Technology
Advanced Power Technology
Advanced Power Technology
Advanced Power Technology







哦! 它是空的。