Altech 618.7735.038

包装/外壳

TO-220-3

Vds - Drain-Source Breakdown Voltage

200 V

Typical Turn-On Delay Time

8 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

38 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 25 V, + 25 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

通孔

Forward Transconductance - Min

4.2 S

Channel Mode

Enhancement

Part # Aliases

FQPF630_NL

Manufacturer

onsemi

Brand

onsemi / Fairchild

Qg - Gate Charge

25 nC

Tradename

QFET

Rds On - Drain-Source Resistance

400 mOhms

RoHS

Details

Typical Turn-Off Delay Time

47 ns

Id - Continuous Drain Current

6.3 A

Harmonized Code

ECCN

EAR99

Itar Registered

Unavailable

系列

FQPF630

包装

Tube

类型

MOSFET

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

75 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET

宽度

4.9 mm

高度

16.07 mm

长度

10.36 mm