AMI Semiconductor FCP7N60_F080
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FCP7N60_F080
137-FCP7N60_F080
晶体管 - FET,MOSFET - 单个
TO-220-3
大陆
立即发货

FCP7N60_F080 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from AMI Semiconductor stock available at utmel
1最小包装量--
FCP7N60_F080详情
AMI Semiconductor FCP7N60_F080重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-220-3
安装类型
通孔
供应商器件包装
TO-220-3
RoHS
Non-Compliant
Power Dissipation (Max)
83W (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25℃
7A (Tc)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
包装
Tube
系列
SuperFET™
操作温度
-55°C ~ 150°C (TJ)
湿度敏感性等级(MSL)
1 (Unlimited)
性别
Male
技术
MOSFET (Metal Oxide)
触点样式
Pin
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
600 mOhm @ 3.5A, 10V
不同 Id 时 Vgs(th)(最大值)
5V @ 250µA
输入电容(Ciss)(Max)@Vds
920pF @ 25V
门极电荷(Qg)(最大)@Vgs
30nC @ 10V
漏源电压 (Vdss)
600V
Vgs(最大值)
±30V
场效应管特性
-
FCP7N60_F080拓展信息
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