AMI Semiconductor FDS5680
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FDS5680
137-FDS5680
晶体管 - FET,MOSFET - 单个
8-SOIC (0.154, 3.90mm Width)
大陆
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FDS5680 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from AMI Semiconductor stock available at utmel
1最小包装量--
FDS5680详情
AMI Semiconductor FDS5680重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-SOIC (0.154, 3.90mm Width)
供应商器件包装
8-SO
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Continuous Drain (Id) @ 25℃
8A (Ta)
Other Names
FDS5680DKR
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Power Dissipation (Max)
2.5W (Ta)
操作温度
-55°C ~ 150°C (TJ)
系列
PowerTrench®
包装
Original-Reel®
湿度敏感性等级(MSL)
1 (Unlimited)
技术
MOSFET (Metal Oxide)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
20 mOhm @ 8A, 10V
不同 Id 时 Vgs(th)(最大值)
4V @ 250µA
输入电容(Ciss)(Max)@Vds
1850pF @ 15V
门极电荷(Qg)(最大)@Vgs
42nC @ 10V
漏源电压 (Vdss)
60V
Vgs(最大值)
±20V
场效应管特性
-
FDS5680拓展信息
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