AMI Semiconductor MMBF170LT1G
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MMBF170LT1G
137-MMBF170LT1G
晶体管 - FET,MOSFET - 单个
TO-236-3, SC-59, SOT-23-3
大陆
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MMBF170LT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from AMI Semiconductor stock available at utmel
1最小包装量--
MMBF170LT1G详情
AMI Semiconductor MMBF170LT1G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-236-3, SC-59, SOT-23-3
供应商器件包装
SOT-23-3 (TO-236)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Continuous Drain (Id) @ 25℃
500mA (Ta)
Other Names
MMBF170LT1GOSDKR
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
225mW (Ta)
操作温度
-55°C ~ 150°C (TJ)
系列
-
包装
Original-Reel®
湿度敏感性等级(MSL)
1 (Unlimited)
技术
MOSFET (Metal Oxide)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
5 Ohm @ 200mA, 10V
不同 Id 时 Vgs(th)(最大值)
3V @ 1mA
输入电容(Ciss)(Max)@Vds
60pF @ 10V
漏源电压 (Vdss)
60V
Vgs(最大值)
±20V
场效应管特性
-
MMBF170LT1G拓展信息
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