AMI Semiconductor NJVMJD44H11D3T4G
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NJVMJD44H11D3T4G
137-NJVMJD44H11D3T4G
晶体管 - 双极性晶体管(BJT)- 单个
TO-252-3, DPak (2 Leads + Tab), SC-63
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NJVMJD44H11D3T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from AMI Semiconductor stock available at utmel
1最小包装量--
NJVMJD44H11D3T4G详情
AMI Semiconductor NJVMJD44H11D3T4G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件包装
DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current-Collector (Ic) (Max)
8A
操作温度
-55°C ~ 150°C (TJ)
系列
-
包装
Tape & Reel (TR)
湿度敏感性等级(MSL)
1 (Unlimited)
功率 - 最大
20W
晶体管类型
NPN
最小直流增益(hFE)@ Ic, Vce
40 @ 4A, 1V
最大集极截止电流
1µA
不同 Ib, Ic 时 Vce 饱和度(最大值)
1V @ 400mA, 8A
电压 - 集射极击穿(最大值)
80V
频率转换
85MHz
NJVMJD44H11D3T4G拓展信息
AMI Semiconductor
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哦! 它是空的。