AMI Semiconductor NSV60600MZ4T3G
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NSV60600MZ4T3G
137-NSV60600MZ4T3G
晶体管 - 双极性晶体管(BJT)- 单个
TO-261-4, TO-261AA
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NSV60600MZ4T3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from AMI Semiconductor stock available at utmel
1最小包装量--
NSV60600MZ4T3G详情
AMI Semiconductor NSV60600MZ4T3G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-261-4, TO-261AA
供应商器件包装
SOT-223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current-Collector (Ic) (Max)
6A
Other Names
NSV60600MZ4T3G-ND NSV60600MZ4T3GOSTR
操作温度
-55°C ~ 150°C (TJ)
系列
-
包装
Tape & Reel (TR)
湿度敏感性等级(MSL)
1 (Unlimited)
基本部件号
NSS60600
功率 - 最大
800mW
晶体管类型
PNP
最小直流增益(hFE)@ Ic, Vce
120 @ 1A, 2V
最大集极截止电流
100nA (ICBO)
不同 Ib, Ic 时 Vce 饱和度(最大值)
350mV @ 600mA, 6A
电压 - 集射极击穿(最大值)
60V
频率转换
100MHz
NSV60600MZ4T3G拓展信息
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