AMI Semiconductor NVMFS6B25NLT1G
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NVMFS6B25NLT1G
137-NVMFS6B25NLT1G
晶体管 - FET,MOSFET - 单个
8-PowerTDFN, 5 Leads
大陆
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NVMFS6B25NLT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from AMI Semiconductor stock available at utmel
1最小包装量--
NVMFS6B25NLT1G详情
AMI Semiconductor NVMFS6B25NLT1G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
底架
Cable
安装类型
表面贴装
包装/外壳
8-PowerTDFN, 5 Leads
供应商器件包装
5-DFN (5x6) (8-SOFL)
RoHS
Non-Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Continuous Drain (Id) @ 25℃
8A (Ta), 33A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Power Dissipation (Max)
3.6W (Ta), 62W (Tc)
操作温度
-55°C ~ 175°C (TJ)
系列
Automotive, AEC-Q101
包装
Tape & Reel (TR)
湿度敏感性等级(MSL)
1 (Unlimited)
颜色
Black
技术
MOSFET (Metal Oxide)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
24 mOhm @ 20A, 10V
不同 Id 时 Vgs(th)(最大值)
3V @ 250µA
输入电容(Ciss)(Max)@Vds
905pF @ 25V
门极电荷(Qg)(最大)@Vgs
13.5nC @ 10V
漏源电压 (Vdss)
100V
Vgs(最大值)
±16V
场效应管特性
-
NVMFS6B25NLT1G拓展信息
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