Amphenol C1G2029SX

包装/外壳

440201

Vds - Drain-Source Breakdown Voltage

120 V

Vgs th - Gate-Source Threshold Voltage

- 3 V

Shipping Restrictions

This product may require additional documentation to export from the United States.

Development Kit

CGH35240F-TB

Pd - Power Dissipation

-

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 40 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

螺钉安装

Forward Transconductance - Min

-

NF - Noise Figure

-

P1dB - Compression Point

-

Manufacturer

Wolfspeed

Brand

Wolfspeed

Rds On - Drain-Source Resistance

-

Maximum Drain Gate Voltage

-

RoHS

Details

Vgs - Gate-Source Breakdown Voltage

- 10 V to 2 V

Gate-Source Cutoff Voltage

-

Typical Turn-Off Delay Time

-

Id - Continuous Drain Current

24 A

Class

-

包装

Tray

应用

-

子类别

Transistors

技术

GaN

工作频率

3.1 GHz to 3.5 GHz

配置

Single

输出功率

240 W

上升时间

-

产品类别

射频JFET晶体管

晶体管类型

HEMT

工作温度范围

-

增益

11.6 dB

产品

GaN HEMT

产品类别

射频JFET晶体管

宽度

23.62 mm

高度

3.76 mm

长度

24.33 mm