参数名
参数值
参数名
参数值
包装/外壳
SOT-223-4
Emitter- Base Voltage VEBO
5 V
Pd - Power Dissipation
2 W
Transistor Polarity
PNP
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
250
Collector-Emitter Saturation Voltage
500 mV
Unit Weight
0.003951 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
4000
Mounting Styles
SMD/SMT
Gain Bandwidth Product fT
75 MHz
Part # Aliases
NZT660A_NL
Manufacturer
onsemi
Brand
onsemi / Fairchild
Maximum DC Collector Current
3 A
DC Current Gain hFE Max
550
RoHS
Details
Collector- Emitter Voltage VCEO Max
60 V
系列
NZT660A
包装
MouseReel
子类别
Transistors
技术
Si
配置
Single
产品类别
BJTs - Bipolar Transistors
集电极基极电压(VCBO)
60 V
连续集电极电流
3 A
产品类别
Bipolar Transistors - BJT
宽度
3.56 mm
高度
1.6 mm
长度
6.5 mm