参数名
参数值
参数名
参数值
ECCN (US)
EAR99
HTS
8541.29.00.75
Channel Mode
Enhancement
Number of Elements per Chip
1
Process Technology
LDMOS
Maximum Drain Source Voltage (V)
65
Maximum Gate Source Voltage (V)
13
Maximum Gate Threshold Voltage (V)
2.25
Maximum VSWR
10
Maximum Gate Source Leakage Current (nA)
40
Maximum IDSS (uA)
4.2
Maximum Drain Source Resistance (mOhm)
52.5@6V
Typical Forward Transconductance (S)
20.16
Output Power (W)
250(Typ)
Typical Power Gain (dB)
18.5
Maximum Frequency (MHz)
2500
Minimum Frequency (MHz)
2400
Typical Drain Efficiency (%)
58.5
Minimum Operating Temperature (°C)
-65
Maximum Operating Temperature (°C)
225
AEC Qualified
Unknown
Supplier Package
SOT1270-1
Military
无
Mounting
表面贴装
Package Height
4.01(Max)
Package Length
20.7(Max)
Package Width
9.91(Max)
PCB changed
3
Reflow Temperature-Max (s)
未说明
Rohs Code
有
Manufacturer Part Number
BLC2425M9LS250
Manufacturer
Ampleon
Part Life Cycle Code
接触制造商
Ihs Manufacturer
AMPLEON NETHERLANDS B V
Risk Rank
5.76
零件状态
活跃
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
unknown
引脚数量
3
配置
Single
信道型
N
操作方式
CW
RoHS状态
符合RoHS标准