Ampleon BLF183XR

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

2

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

135

Maximum Gate Source Voltage (V)

11

Maximum Gate Threshold Voltage (V)

2.33

Maximum VSWR

65

Maximum Gate Source Leakage Current (nA)

140

Maximum IDSS (uA)

1.4

Maximum Drain Source Resistance (mOhm)

290(Typ)@6.08V

Typical Input Capacitance @ Vds (pF)

156@50V

Typical Reverse Transfer Capacitance @ Vds (pF)

1.1@50V

Typical Output Capacitance @ Vds (pF)

51@50V

Output Power (W)

400

Typical Power Gain (dB)

28

Maximum Frequency (MHz)

600

Minimum Frequency (MHz)

10

Typical Drain Efficiency (%)

75

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

225

Military

无

零件状态

活跃

配置

双共源

信道型

N

操作方式

脉冲射频

RoHS状态

符合RoHS标准