Ampleon BLF369,112

ECCN (US)

EAR99

Channel Mode

Enhancement

Number of Elements per Chip

2

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

13

Maximum VSWR

10

Maximum Drain Source Resistance (mOhm)

40(Typ)@14.5V

Typical Input Capacitance @ Vds (pF)

400@32V

Typical Reverse Transfer Capacitance @ Vds (pF)

15@32V

Typical Output Capacitance @ Vds (pF)

230@32V

Typical Forward Transconductance (S)

15

Output Power (W)

500

Typical Power Gain (dB)

18|19|19|19|19|19|19

Maximum Frequency (MHz)

500

Minimum Frequency (MHz)

10

Typical Drain Efficiency (%)

60

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Supplier Package

LDMOST

Military

无

Mounting

Screw

Package Height

6.3

Package Length

44.5

Package Width

15.4

PCB changed

5

零件状态

Obsolete

引脚数量

5

配置

双共源

信道型

N

操作方式

CW Class-AB|Pulsed RF Class-AB|2-Tone Class-AB

RoHS状态

是,有豁免