Ampleon BLF644P

ECCN (US)

EAR99

Channel Mode

Depletion

Number of Elements per Chip

2

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

11

Maximum Gate Threshold Voltage (V)

2.4

Maximum VSWR

10

Maximum Gate Source Leakage Current (nA)

50

Maximum IDSS (uA)

1.4

Maximum Drain Source Resistance (mOhm)

300(Typ)@6.15V

Typical Input Capacitance @ Vds (pF)

39@32V

Typical Reverse Transfer Capacitance @ Vds (pF)

0.84@32V

Typical Output Capacitance @ Vds (pF)

15@32V

Typical Forward Transconductance (S)

3.3

Output Power (W)

100(Typ)

Typical Power Gain (dB)

23.5

Maximum Frequency (MHz)

1300

Minimum Frequency (MHz)

10

Typical Drain Efficiency (%)

66

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Supplier Package

CDFM

Military

无

Mounting

Screw

Package Height

5.2(Max)

Package Length

29.08(Max)

Package Width

5.97(Max)

PCB changed

5

零件状态

活跃

引脚数量

5

配置

双共源

信道型

N

操作方式

CW

RoHS状态

符合RoHS标准